Spin split cyclotron resonance in GaAs quantum wells

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	Spin split cyclotron resonance in GaAs quantum wells
	Wu XG; Wu XG Chinese Acad Sci Inst Semicond NLSM Beijing 100864 Peoples R China.
	2000
会议名称	Workshop of the Advanced-Study-Institute on Physics and Chemistry of Nanostructures Materials
会议录名称	PHYSICS AND CHEMISTRY OF NANOSTRUCTURED MATERIALS
页码	68-71
会议日期	JAN, 1999
会议地点	HONG KONG, PEOPLES R CHINA
出版地	11 NEW FETTER LANE, LONDON EC4P 4EE, ENGLAND
出版者	TAYLOR & FRANCIS LTD
ISBN	0-7484-0873-8
部门归属	chinese acad sci, inst semicond, nlsm, beijing 100864, peoples r china
摘要	The cyclotron resonance (CR) of electrons in GaAs/AlGaAs quantum wells is investigated theoretically to explain a recent CR experiment, where two CR peaks were observed at high magnetic fields when both spin-up and spin-down states of the lowest Landau level are occupied. Our theoretical model takes into account the conduction band non-parabolicity, the electron bulk longitude-optic-phonon coupling, and the self-consistent subband structure. A good agreement is found.
关键词	Limit
学科领域	半导体物理
主办者	Croucher Fdn.; Adv Study Inst.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13733
专题	中国科学院半导体研究所（2009年前）
通讯作者	Wu XG Chinese Acad Sci Inst Semicond NLSM Beijing 100864 Peoples R China.
推荐引用方式 GB/T 7714	Wu XG,Wu XG Chinese Acad Sci Inst Semicond NLSM Beijing 100864 Peoples R China.. Spin split cyclotron resonance in GaAs quantum wells[C]. 11 NEW FETTER LANE, LONDON EC4P 4EE, ENGLAND:TAYLOR & FRANCIS LTD,2000:68-71.

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