Optical transitions in GaNAs/GaAs single quantum well

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Optical transitions in GaNAs/GaAs single quantum well
	Luo XD; Xu ZY; Sun BQ; Pan Z; Li LH; Lin YW; Ge WK; Luo XD Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
	2000
会议名称	International Workshop on Nitride Semiconductors (IWN 2000)
会议录名称	PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1
页码	677-680
会议日期	SEP 24-27, 2000
会议地点	NAGOYA, JAPAN
出版地	DAINI TOYOKAIJI BLDG 24-8 SHINBASHI 4 CHOME, TOKYO, 105-0004, JAPAN
出版者	INST PURE APPLIED PHYSICS
ISBN	4-900526-13-4
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	We have investigated GaNAs/GaAs single quantum wells (SQWs) grown by molecular beam epitaxy (MBE) using photoluminescence (PL), time-resolved PL (TRPL) and photovoltaic (PV) techniques. The low temperature PL is dominated by spatially direct transitions involving electrons confined in GaNAs well and holes localized in the same GaNAs layer. This assignment was supported by PL decay time measurements and absorption line-shape analysis derived from the PV measurements. By fitting the experimental data with a simple calculation, the band offset of the GaN0.015As0.985/GaAS heterostructure was estimated, and a type II band lineup in GaN0.015As0.985/GaAs QWs was suggested. Moreover, DeltaE(C), the discontinuity of conductor band, is found to be a nonlinear function of the nitrogen (N) composition (x), and the average variation of DeltaE(C) is about 0.110eV per %N, The measured band bowing coefficient shows a strong function of x, giving an experimental support to the theoretic calculation of Wei et al [Ref.2].
关键词	Ganas Photoluminescence Band Offset Band Bowing Coefficient Localized Exciton Molecular-beam Epitaxy Alloys Temperature Gaasn
学科领域	半导体物理
主办者	Japan Soc Appl Phys, Solid State Phys & Applicat Div.; Japan Soc Promot Sci, Comm Short Wavelength Optoelectr Devices, 162.; Japan Soc Promot Sci, Comm Convers Light & Elect, 125.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13707
专题	中国科学院半导体研究所（2009年前）
通讯作者	Luo XD Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Luo XD,Xu ZY,Sun BQ,et al. Optical transitions in GaNAs/GaAs single quantum well[C]. DAINI TOYOKAIJI BLDG 24-8 SHINBASHI 4 CHOME, TOKYO, 105-0004, JAPAN:INST PURE APPLIED PHYSICS,2000:677-680.

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