Small signal equivalent circuit model of vertical cavity surface emitting lasers

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	Small signal equivalent circuit model of vertical cavity surface emitting lasers
	Mao LH; Chen HD; Tang J; Liang K; Wu RB; Nian H; Guo WL; Wu XW; Mao LH Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
	2001
会议名称	6th International Conference on Solid-State and Integrated-Circuit Technology
会议录名称	SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS
页码	1296-1298
会议日期	OCT 22-25, 2001
会议地点	SHANGHAI, PEOPLES R CHINA
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	0-7803-6520-8
部门归属	chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
摘要	Small signal equivalent circuit model of vertical cavity surface emitting lasers (VCSEL's) is given in this paper. The modulation properties of VCSEL are simulated using this model in Pspice program. The simulation results are good agree with experiment data. Experiment is performed to testify the circuit model.
关键词	Quantum-well Lasers
学科领域	光电子学
主办者	Chinese Inst Electr.; IEEE Beijing Sect.; IEEE Electron Devices Soc.; IEEE EDS Beijing Chapter.; IEEE EDS Shanghai Chapter.; IEEE Solid State Circuits Soc.; Japan Soc Appl Phys.; IEE, Electr Div.; IEE Korea.; Assoc Asia Pacific Phys Soc.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13681
专题	中国科学院半导体研究所（2009年前）
通讯作者	Mao LH Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Mao LH,Chen HD,Tang J,et al. Small signal equivalent circuit model of vertical cavity surface emitting lasers[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2001:1296-1298.

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