Optical properties of AIInGaN quaternary alloys

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Optical properties of AIInGaN quaternary alloys
	Huang JS; Dong X; Luo XD; Liu XL; Xu ZY; Ge WK; Huang JS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
	2002
会议名称	Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD)
会议录名称	COMMAD 2002 PROCEEDINGS
页码	49-52
会议日期	DEC 11-13, 2002
会议地点	SYDNEY, AUSTRALIA
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	0-7803-7571-8
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	Carrier recombination dynamics in AlInGaN alloy has been studied by photoluminescence (PL) and time-resolved photoluminescence (TRPL). The fast redshift of PL peak energy is observed and well fitted by a physical model considering the thermal activation and transfer processes. This result provides evidence for the exciton localization in the quantum dot (QD)-like potentials in our AlInGaN alloy. The TRPL signals are found to be described by a stretched exponential function of exp[(-t/tau)(beta)], indicating the presence of a significant disorder in the material. The disorder is attributed to a randomly distributed quantum dots or clusters caused by indium fluctuations. By studying the dependence of the dispersive exponent 8 on the temperature and emission energy, we suggest that the exciton hopping dominate the diffusion of carriers localized in the disordered quantum dots. Furthermore, the localized states are found to have OD density of states up to 250 K, since the radiative lifetime remains almost unchanged with increasing temperature.
关键词	Light-emitting-diodes Localized Excitons Luminescence Relaxation Silicon Band
学科领域	半导体物理
主办者	Ansto Sims Lab.; Avt Vacuum & Cryogen Serv.; Coltron Syst Pty Ltd.; Heys Technol Int Pty Ltd.; IEEE, Elect Devices Soc.; IEEE, Lasers & Electro Opt Soc.; LASTEK Pty Ltd.; Oxford Instruments Plasma Technol Pty Ltd.; PANalytical.; PHILIPS ELECT.; SCITEK AUSTRALIA Pty Ltd.; WARSASH SCI Pty Ltd.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13639
专题	中国科学院半导体研究所（2009年前）
通讯作者	Huang JS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Huang JS,Dong X,Luo XD,et al. Optical properties of AIInGaN quaternary alloys[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2002:49-52.

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