Space-grown SI-GaAs and its application

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	Space-grown SI-GaAs and its application
	Chen NF; Zhong XG; Zhang M; Lin LY; Chen NF Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
	2002
会议名称	12th International Semicoducting and Insulating Materials Conference (SIMC-XII2002)
会议录名称	2002 12TH INTERNATIONAL CONFERENCE ON SEMICONDUCTING & INSULATING MATERIALS
页码	3-8
会议日期	JUN 30-JUL 05, 2002
会议地点	SMOLENICE, SLOVAKIA
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	0-7803-7418-5
部门归属	chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
摘要	A semi-insulating GaAs single crystal ingot was grown in a recoverable satellite, within a specially designed pyrolytic boron nitride crucible, in a power-travelling furnace under microgravity. The crystal was characterized systematically and was used in fabricating low noise field effect transistors and analogue switch integrated circuits by the direct ion-implantation technique. All key electrical properties of these transistors and integrated circuits have surpassed those made from conventional earth-grown gallium arsenide. This result shows that device-grade space-grown semiconducting single. crystal has surpassed the best. terrestrial counterparts. Studies on the correlation between SI-GaAs wafers and the electronic devices and integrated circuits indicate that the characteristics of a compound semiconductor single crystal depends fundamentally on its stoichiometry.
关键词	Semiinsulating Gallium-arsenide Floating-zone Growth Crystal-growth Zero Gravity Microgravity Segregation Stoichiometry Silicon Defects Insb
学科领域	半导体材料
主办者	IEE.; Slovak Acad Sci.; IEEE Elect Devices Soc.; CMK Ltd.; Engn Control Syst.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13633
专题	中国科学院半导体研究所（2009年前）
通讯作者	Chen NF Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Chen NF,Zhong XG,Zhang M,et al. Space-grown SI-GaAs and its application[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2002:3-8.

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