Characterization of polymorphous silicon thin film and solar cells

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Characterization of polymorphous silicon thin film and solar cells
	Zhang S; Xu Y; Liao X; Martins R; Fortunato E; Hu Z; Kong G; Zhang S Chinese Acad Sci Inst Semicond State Key Lab Surface Phys Beijing 100083 Peoples R China. 电子邮箱地址: sz@uninova.pt
	2004
会议名称	2nd International Materials Symposium
会议录名称	ADVANCED MATERIALS FORUM II, 455-456
页码	77-80
会议日期	APR 14-16, 2003
会议地点	Caparica, PORTUGAL
出版地	BRANDRAIN 6, CH-8707 ZURICH-UETIKON, SWITZERLAND
出版者	TRANS TECH PUBLICATIONS LTD
ISSN	0255-5476
ISBN	0-87849-941-5
部门归属	chinese acad sci, inst semicond, state key lab surface phys, beijing 100083, peoples r china; chinese acad sci, ctr condensed matter phys, beijing 100083, peoples r china; new univ lisbon, fac sci & technol, dept mat sci, cemop, p-2829516 caparica, portugal
摘要	Polymorphous silicon (pm-Si:H) films have been prepared by a new regime of plasma enhanced chemical vapour deposition in the region adjacent of phase transition from amorphous to microcrystalline state. Comparing to the conventional amorphous silicon (a-Si:H), the pm-Si:H has higher photoconductivity (sigma(ph)), better stability, and a broader light spectral response range in the longer wavelength range. It can be found from Raman spectra that there is a notable improvement in the medium range order. There are a blue shift for the stretching mode of IR spectra and a red shift for the wagging mode. The shifts are attributed to the variation of the microstructure. By using pm-Si:H film as intrinsic layer, a p-i-n junction solar cell was prepared with the initial efficiency of 8.51% and a stabilized efficiency of 8.01% (AM1.5, 100mw/cm(2)) at room temperature (T-R).
关键词	Polymorphous Silicon Thin Film Solar Cell
学科领域	半导体材料
主办者	Portuguese Mat Soc.; Portuguese Sci Fdn.; Calouste Gulbenkian Fdn.; Luso Amer Fdn.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13595
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zhang S Chinese Acad Sci Inst Semicond State Key Lab Surface Phys Beijing 100083 Peoples R China. 电子邮箱地址: sz@uninova.pt
推荐引用方式 GB/T 7714	Zhang S,Xu Y,Liao X,et al. Characterization of polymorphous silicon thin film and solar cells[C]. BRANDRAIN 6, CH-8707 ZURICH-UETIKON, SWITZERLAND:TRANS TECH PUBLICATIONS LTD,2004:77-80.

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