Reduction in crystallographic tilt of lateral epitaxial overgrown GaN by using new patterned shape mask

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Reduction in crystallographic tilt of lateral epitaxial overgrown GaN by using new patterned shape mask
	Feng G; Shen XM; Zhu JJ; Zhang BS; Yang H; Liang JW; Feng G Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
	2003
会议名称	5th International Conference on Nitride Semiconductors (ICNS-5)
会议录名称	5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS
页码	2167-2170
会议日期	MAY 25-30, 2003
会议地点	NARA, JAPAN
出版地	605 THIRD AVE, NEW YORK, NY 10158-0012 USA
出版者	WILEY-VCH, INC
ISBN	3-527-40489-9
部门归属	chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
摘要	We proposed a new method to suppress the crystallographic tilt in the lateral epitaxial overgrowth of GaN by using an oxide mask with a newly designed pattern. A rhombus mask with edges oriented in the direction of <10 - 10>(GaN) was used instead of the traditional stripe mask. The morphology evolution during the LEO GaN with the rhombus mask was investigated by SEM, and the crystallographic tilt in the LEO GaN was measured by DC-XRD. It is found that using the new rhombus mask can decrease the crystallographic tilt in the LEO GaN. In addition, this method makes the ELO GaN stripes easy to coalesce. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
关键词	Buffer Layer Substrate Diodes Growth
学科领域	光电子学
主办者	Japan Soc Appl Phys.; Japan Soc Promot Sci, 162nd Comm Wide Bandgap Semiconductor Photon & Elect Devices.; Japan Assoc Crystal Growth.; Elect Soc.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13563
专题	中国科学院半导体研究所（2009年前）
通讯作者	Feng G Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Feng G,Shen XM,Zhu JJ,et al. Reduction in crystallographic tilt of lateral epitaxial overgrown GaN by using new patterned shape mask[C]. 605 THIRD AVE, NEW YORK, NY 10158-0012 USA:WILEY-VCH, INC,2003:2167-2170.

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