可控电参数的低位错磷化铟单晶制备

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

Subject Area	半导体材料
	可控电参数的低位错磷化铟单晶制备
	叶式中; 刘巽琅; 刘思林; 孙同年; 焦景华
Subtype	国家科技进步奖
Award Level	三等奖
	1985
Keyword	磷化铟
Language	中文
Document Type	成果
Identifier	http://ir.semi.ac.cn/handle/172111/10932
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	叶式中,刘巽琅,刘思林,等. 可控电参数的低位错磷化铟单晶制备. 1985.

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