Electroabsorption modulated semiconductor optical amplifier monolithically integrated with spot-size converters

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Electroabsorption modulated semiconductor optical amplifier monolithically integrated with spot-size converters
	Hou LP; Zhu HL; Zhou F; Wang BJ; Bian J; Wang W; Hou, LP, Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China. 电子邮箱地址: houlp@red.semi.ac.cn
	2006
会议名称	3rd International Conference on Materials for Advanced Technologies/9th International Conference on Advanced Materials
会议录名称	JOURNAL OF CRYSTAL GROWTH
页码	288 (1): 148-152
会议日期	JUL 03-08, 2005
会议地点	Singapore, SINGAPORE
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	0022-0248
部门归属	chinese acad sci, inst semicond, natl res ctr optoelect technol, beijing 100083, peoples r china
摘要	We have demonstrated an electroabsorption modulator (EAM) and semiconductor optical amplifier (SOA) monolithically integrated with novel dual-waveguide spot-size converters (SSCs) at the input and output ports for low-loss coupling to planar light-guide circuit silica waveguide or cleaved single-mode optical fiber. The device is fabricated by means of selective-area MOVPE growth (SAG), quantum well intermixing (QWI) and asymmetric twin waveguide (ATG) technologies with only three steps low-pressure MOVPE growth. For the device structure, in SOA/EAM section, double ridge structure was employed to reduce the EAM capacitances and enable high bit-rate operation. In the SSC sections, buried ridge stripe (BRS) were incorporated. Such a combination of ridge, ATG and BRS structure is reported for the first time in which it can take advantage of both easy processing of ridge structure and the excellent mode characteristic of BRS. At the wavelength range of 1550-1600 nm, lossless operation with extinction ratios of 25 dB DC and more than 10 GHz 3-dB bandwidth is successfully achieved. The beam divergence angles of the input and output ports of the device are as small as 8.0 degrees x 12.6 degrees, resulting in 3.0 dB coupling loss with cleaved single-mode optical fiber. (c) 2005 Elsevier B.V. All rights reserved.
关键词	Asymmetric Twin Waveguide
学科领域	光电子学
主办者	Int Union Mat Res Soc.; Mat Res Soc Singapore.; Suntec Int Convent & Exhibit Ctr.
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/10044
专题	中国科学院半导体研究所（2009年前）
通讯作者	Hou, LP, Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China. 电子邮箱地址: houlp@red.semi.ac.cn
推荐引用方式 GB/T 7714	Hou LP,Zhu HL,Zhou F,et al. Electroabsorption modulated semiconductor optical amplifier monolithically integrated with spot-size converters[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2006:288 (1): 148-152.

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