High-performance EML grown on taper-masked pattern substrates by ultra-low-pressure MOCVD

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	High-performance EML grown on taper-masked pattern substrates by ultra-low-pressure MOCVD
	Zhao, Q; Pan, JQ; Zhang, J; Zhu, HL; Wang, W; Zhao, Q, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: qzhao@red.semi.ac.cn
	2006
会议名称	3rd International Conference on Materials for Advanced Technologies/9th International Conference on Advanced Materials
会议录名称	JOURNAL OF CRYSTAL GROWTH
页码	288 (1): 27-31
会议日期	JUL 03-08, 2005
会议地点	Singapore, SINGAPORE
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	0022-0248
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	A novel in-plane bandgap energy controlling technique by ultra-low pressure (22 mbar) selective area growth (SAG) has been developed. To our knowledge, this is the lowest pressure condition during SAG process ever reported. In this work, high crystalline quality InGaAsP-InP MQWs with a photoluminescence (PL) full-width at half-maximum (FWHM) of less than 35meV are selectively grown on mask-patterned planar InP substrates by ultra-low pressure (22 mbar) metal-organic chemical vapor deposition (MOCVD). In order to study the uniformity of the MQWs grown in the selective area, novel tapered masks are designed and used. Through optimizing growth conditions, a wide wavelength shift of over 80 nm with a rather small mask width variation (0-30 mu m) is obtained. The mechanism of ultra-low pressure SAG is detailed by analyzing the effect of various mask designs and quantum well widths. This powerful technique is then applied to fabricate an electroabsorption-modulated laser (EML). Superior device characteristics are achieved, such as a low threshold current of 19mA and an output power of 7mW. (c) 2005 Elsevier B.V. All rights reserved.
关键词	Selective Area Growth
学科领域	光电子学
主办者	Int Union Mat Res Soc.; Mat Res Soc Singapore.; Suntec Int Convent & Exhibit Ctr.
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/10042
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zhao, Q, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: qzhao@red.semi.ac.cn
推荐引用方式 GB/T 7714	Zhao, Q,Pan, JQ,Zhang, J,et al. High-performance EML grown on taper-masked pattern substrates by ultra-low-pressure MOCVD[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2006:288 (1): 27-31.

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