Nanostructure in the p-layer and its impacts on amorphous silicon solar cells

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Nanostructure in the p-layer and its impacts on amorphous silicon solar cells
	Liao, XB (Liao, Xianbo); Du, WH (Du, Wenhui); Yang, XS (Yang, Xiesen); Povolny, H (Povolny, Henry); Xiang, XB (Xiang, Xianbi); Deng, XM (Deng, Xunming); Sun, K (Sun, Kai); Liao, XB, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: xbliao2003@yahoo.com
	2006
会议名称	21st International Conference on Amorphous and Nanocrystalline Semiconductors
会议录名称	JOURNAL OF NON-CRYSTALLINE SOLIDS
页码	352 (9-20): 1841-1846
会议日期	SEP 04-09, 2005
会议地点	Lisbon, PORTUGAL
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	0022-3093
部门归属	univ toledo, dept phys & astron, toledo, oh 43606 usa; univ michigan, electron microbeam anal lab, ann arbor, mi 48109 usa
摘要	The open circuit voltage (V-oc) of n-i-p type hydrogenated amorphous silicon (a-Si:H) solar cells has been examined by means of experimental and numerical modeling. The i- and p-layer limitations on V-oc are separated and the emphasis is to identify the impact of different kinds of p-layers. Hydrogenated protocrystalline, nanocrystalline and microcrystalline silicon p-layers were prepared and characterized using Raman spectroscopy, high resolution transmission electron microscopy (HRTEM), optical transmittance and activation energy of dark-conductivity. The n-i-p a-Si:H solar cells incorporated with these p-layers were comparatively investigated, which demonstrated a wide variation of V-oc from 1.042 V to 0.369 V, under identical i- and n-layer conditions. It is found that the nanocrystalline silicon (nc-Si:H) p-layer with a certain nanocrystalline volume fraction leads to a higher V-oc. The optimum p-layer material for n-i-p type a-Si:H solar cells is not found at the onset of the transition between the amorphous to mixed phases, nor is it associated with a microcrystalline material with a large grain size and a high volume fraction of crystalline phase. (c) 2006 Elsevier B.V. All rights reserved.
关键词	Amorphous Semiconductors
学科领域	半导体材料
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/10008
专题	中国科学院半导体研究所（2009年前）
通讯作者	Liao, XB, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: xbliao2003@yahoo.com
推荐引用方式 GB/T 7714	Liao, XB ,Du, WH ,Yang, XS ,et al. Nanostructure in the p-layer and its impacts on amorphous silicon solar cells[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2006:352 (9-20): 1841-1846.

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