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4H-SiC基AlN栅介质原子层沉积生长研究 学位论文
, 中国科学院半导体研究所: 中国科学院大学, 2019
Authors:  陈俊
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无权访问的条目 学位论文
Authors:  于天
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High-frequency very long wave infrared quantum cascade detectors 期刊论文
Semiconductor Science and Technology, 2018, 卷号: 33, 页码: 125016
Authors:  Junqi Liu ;   Yuhong Zhou ;   Shenqiang Zhai ;   Fengqi Liu ;  Shuman Liu ;   Jinchuan Zhang ;   Ning Zhuo ;   Lijun Wang Zhanguo Wang
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InAsInP量子点宽带可调谐外腔激光器 学位论文
, 中国科学院半导体研究所: 中国科学院大学, 2019
Authors:  袁慧宏
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水平三层流 HVPE反应室流场和热场数值模拟计算研究 学位论文
, 中国科学院半导体研究所: 中国科学院大学, 2019
Authors:  胡君
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无权访问的条目 学位论文
Authors:  王东博
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Insight into the Influence of Cl Incorporation intoLead-Halide Perovskite Materials A Review 期刊论文
Journal of Nanoscience and Nanotechnology, 2018, 卷号: 18, 期号: 11, 页码: 7335–7348
Authors:  Muhammad Azam ;   Shizhong Yue ;   Kong Liu ;   Yang Sun ;   Jun Liu ;   Kuankuan Ren ;   Zhijie Wang ;   Shengchun Qu ;   Zhanguo Wang
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Effects of Electric Field on the Electronic Structures of Broken-gap Phosphorene/SnX 2 (X =S, Se) van der Waals Heterojunctions 期刊论文
Physical Review Applied, 2018, 卷号: 10, 期号: 5, 页码: 054064
Authors:  Congxin Xia;  Juan Du;  Meng Li;  Xueping Li;  Xu Zhao;  Tianxing Wang;  Jingbo Li
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The Residual Stress and Al Incorporation of AlGaN Epilayers by Metalorganic Chemical Vapor Deposition 期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 卷号: 18, 期号: 11, 页码: 7484-7488
Authors:  Li Fangzheng;  Wang Lianshan;  Zhao Guijuan;  Meng Yulin;  Li Huijie;  Chen Yanan;  Yang Shaoyan;  Jin Peng;  Wang Zhanguo
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Structural and optical properties of semi-polar (11-22) InGaN/GaN green light-emitting diode structure 期刊论文
APPLIED PHYSICS LETTERS, 2018, 卷号: 112, 期号: 5, 页码: 052105
Authors:  Guijuan Zhao;   Lianshan Wang;   Huijie Li;   Yulin Meng;   Fangzheng Li;   Shaoyan Yang;   Zhanguo Wang
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Red Emission of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diode Structures With Indium-Rich Clusters 期刊论文
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2018, 卷号: 215, 期号: 23, 页码: 1800455
Authors:  Meng Yulin;  Wang Lianshan;  Zhao Guijuan;  Li Fangzheng;  Li Huijie;  Yang Shaoyan;  Wang Zhanguo
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Single mercury nanoelectrode: Single nucleus growth on Au nanoelectrode and its sensing application 期刊论文
Sensors and Actuators B: Chemical, 2018, 卷号: 282, 页码: 523–528
Authors:  Haoran Tang ;   Jiahui Zhu ;   Xiaoqing Xiao ;   Zhijie Wang ;   Hao Wang ;   Yongxin Li
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Measurement of semi-polar (11–22) plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy 期刊论文
Applied Physics A, 2018, 卷号: 124, 期号: 2, 页码: 130
Authors:  Guijuan Zhao;  Huijie Li;  Lianshan Wang;  Yulin Meng;  Fangzheng Li;  Hongyuan Wei;  Shaoyan Yang;  Zhanguo Wang
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Comparative Investigation of Semipolar (11-22) GaN Layers on m-Plane Sapphire with Different Nucleation Layers 期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 卷号: 18, 期号: 11, 页码: 7446-7450
Authors:  Wang Lianshan;  Zhao Guijuan;  Meng Yulin;  Li Huijie;  Yang Shaoyan;  Wang Zhanguo
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LVM Spectroscopy Investigation of Complex Defects in InAs Single Crystals Grown by the LEC Method 期刊论文
Journal of Electronic Materials, 2018, 卷号: 47, 期号: 9, 页码: 4998-5001
Authors:  Guiying Shen;  Youwen Zhao;  Jingming Liu;  Yongbiao Bai;  Zhiyuan Dong;  Hui Xie;  Xiaoyu Chen
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Impurity band conduction in Mn-doped p type InAs single crystal 期刊论文
Materials Science in Semiconductor Processing, 2018, 卷号: 84, 页码: 115-118
Authors:  Guiying Shen ;   Youwen Zhao ;   Yongbiao Bai ;   Ding Yu ;   Jingming Liu ;   Hui Xie ;   Zhiyuan Dong ;   Jun Yang ;   Fengyun Yang ;   Fenghua Wang
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Tunable plasmon-induced transparency with graphene-based T-shaped array metasurfaces 期刊论文
Optics Communications, 2018, 卷号: 416, 页码: 77-83
Authors:  Yuying Niu ;   Jicheng Wang ;   Zhengda Hu ;   Feng Zhang
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Investigation of surface traps-induced current collapse phenomenon in AlGaN/ GaN high electron mobility transistors with schottky gate structures 期刊论文
Journal of Physics D: Applied Physics, 2018, 卷号: 51, 期号: 34, 页码: 345102
Authors:  Huang Huolin;  Sun Zhonghao;  Cao Yaqing;  Li Feiyu;  Zhang Feng;  Wen Zhengxin;  Zhang Zifeng;  Liang Yung C.;  Hu Lizhong
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The influence of MBE and device structure on the electrical properties of GaAs HEMT biosensors 期刊论文
JOURNAL OF SEMICONDUCTORS, 2018, 卷号: 39, 期号: 12, 页码: 124007
Authors:  Luo Jiaming;  Guan Min;  Zhang Yang
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Process optimization for homoepitaxial growth of thick 4H-SiC films via hydrogen chloride chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2018, 卷号: 504, 页码: 7-12
Authors:  X.F. Liu ;   G.G. Yan ;   B. Liu ;   Z.W. Shen ;   Z.X. Wen ;   J. Chen ;   W.S. Zhao ;   L. Wang ;   F. Zhang ;   G.S. Sun ;   Y.P. Zeng
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