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| 4H-SiC基AlN栅介质原子层沉积生长研究 学位论文
, 中国科学院半导体研究所: 中国科学院大学, 2019
Authors: 陈俊
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| 无权访问的条目 学位论文
Authors: 于天
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| High-frequency very long wave infrared quantum cascade detectors 期刊论文
Semiconductor Science and Technology, 2018, 卷号: 33, 页码: 125016
Authors: Junqi Liu ; Yuhong Zhou ; Shenqiang Zhai ; Fengqi Liu ; Shuman Liu ; Jinchuan Zhang ; Ning Zhuo ; Lijun Wang Zhanguo Wang
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| InAsInP量子点宽带可调谐外腔激光器 学位论文
, 中国科学院半导体研究所: 中国科学院大学, 2019
Authors: 袁慧宏
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| 水平三层流 HVPE反应室流场和热场数值模拟计算研究 学位论文
, 中国科学院半导体研究所: 中国科学院大学, 2019
Authors: 胡君
Adobe PDF(5557Kb) | Favorite | View/Download：8/0 | Submit date：2019/11/19 |
| 无权访问的条目 学位论文
Authors: 王东博
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| Insight into the Influence of Cl Incorporation intoLead-Halide Perovskite Materials A Review 期刊论文
Journal of Nanoscience and Nanotechnology, 2018, 卷号: 18, 期号: 11, 页码: 7335–7348
Authors: Muhammad Azam ; Shizhong Yue ; Kong Liu ; Yang Sun ; Jun Liu ; Kuankuan Ren ; Zhijie Wang ; Shengchun Qu ; Zhanguo Wang
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| Effects of Electric Field on the Electronic Structures of Broken-gap Phosphorene/SnX 2 (X =S, Se) van der Waals Heterojunctions 期刊论文
Physical Review Applied, 2018, 卷号: 10, 期号: 5, 页码: 054064
Authors: Congxin Xia; Juan Du; Meng Li; Xueping Li; Xu Zhao; Tianxing Wang; Jingbo Li
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| The Residual Stress and Al Incorporation of AlGaN Epilayers by Metalorganic Chemical Vapor Deposition 期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 卷号: 18, 期号: 11, 页码: 7484-7488
Authors: Li Fangzheng; Wang Lianshan; Zhao Guijuan; Meng Yulin; Li Huijie; Chen Yanan; Yang Shaoyan; Jin Peng; Wang Zhanguo
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| Structural and optical properties of semi-polar (11-22) InGaN/GaN green light-emitting diode structure 期刊论文
APPLIED PHYSICS LETTERS, 2018, 卷号: 112, 期号: 5, 页码: 052105
Authors: Guijuan Zhao; Lianshan Wang; Huijie Li; Yulin Meng; Fangzheng Li; Shaoyan Yang; Zhanguo Wang
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| Red Emission of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diode Structures With Indium-Rich Clusters 期刊论文
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2018, 卷号: 215, 期号: 23, 页码: 1800455
Authors: Meng Yulin; Wang Lianshan; Zhao Guijuan; Li Fangzheng; Li Huijie; Yang Shaoyan; Wang Zhanguo
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| Single mercury nanoelectrode: Single nucleus growth on Au nanoelectrode and its sensing application 期刊论文
Sensors and Actuators B: Chemical, 2018, 卷号: 282, 页码: 523–528
Authors: Haoran Tang ; Jiahui Zhu ; Xiaoqing Xiao ; Zhijie Wang ; Hao Wang ; Yongxin Li
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| Measurement of semi-polar (11–22) plane AlN/GaN heterojunction band offsets by X-ray photoelectron spectroscopy 期刊论文
Applied Physics A, 2018, 卷号: 124, 期号: 2, 页码: 130
Authors: Guijuan Zhao; Huijie Li; Lianshan Wang; Yulin Meng; Fangzheng Li; Hongyuan Wei; Shaoyan Yang; Zhanguo Wang
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| Comparative Investigation of Semipolar (11-22) GaN Layers on m-Plane Sapphire with Different Nucleation Layers 期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 卷号: 18, 期号: 11, 页码: 7446-7450
Authors: Wang Lianshan; Zhao Guijuan; Meng Yulin; Li Huijie; Yang Shaoyan; Wang Zhanguo
Adobe PDF(315Kb) | Favorite | View/Download：11/0 | Submit date：2019/11/15 |
| LVM Spectroscopy Investigation of Complex Defects in InAs Single Crystals Grown by the LEC Method 期刊论文
Journal of Electronic Materials, 2018, 卷号: 47, 期号: 9, 页码: 4998-5001
Authors: Guiying Shen; Youwen Zhao; Jingming Liu; Yongbiao Bai; Zhiyuan Dong; Hui Xie; Xiaoyu Chen
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| Impurity band conduction in Mn-doped p type InAs single crystal 期刊论文
Materials Science in Semiconductor Processing, 2018, 卷号: 84, 页码: 115-118
Authors: Guiying Shen ; Youwen Zhao ; Yongbiao Bai ; Ding Yu ; Jingming Liu ; Hui Xie ; Zhiyuan Dong ; Jun Yang ; Fengyun Yang ; Fenghua Wang
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| Tunable plasmon-induced transparency with graphene-based T-shaped array metasurfaces 期刊论文
Optics Communications, 2018, 卷号: 416, 页码: 77-83
Authors: Yuying Niu ; Jicheng Wang ; Zhengda Hu ; Feng Zhang
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| Investigation of surface traps-induced current collapse phenomenon in AlGaN/ GaN high electron mobility transistors with schottky gate structures 期刊论文
Journal of Physics D: Applied Physics, 2018, 卷号: 51, 期号: 34, 页码: 345102
Authors: Huang Huolin; Sun Zhonghao; Cao Yaqing; Li Feiyu; Zhang Feng; Wen Zhengxin; Zhang Zifeng; Liang Yung C.; Hu Lizhong
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| The influence of MBE and device structure on the electrical properties of GaAs HEMT biosensors 期刊论文
JOURNAL OF SEMICONDUCTORS, 2018, 卷号: 39, 期号: 12, 页码: 124007
Authors: Luo Jiaming; Guan Min; Zhang Yang
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| Process optimization for homoepitaxial growth of thick 4H-SiC films via hydrogen chloride chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2018, 卷号: 504, 页码: 7-12
Authors: X.F. Liu ; G.G. Yan ; B. Liu ; Z.W. Shen ; Z.X. Wen ; J. Chen ; W.S. Zhao ; L. Wang ; F. Zhang ; G.S. Sun ; Y.P. Zeng
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