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| In Operando Micro-Raman Three-Dimensional Thermometry with Diffraction-Limit Spatial Resolution for GaN-based Light-Emitting Diodes 期刊论文
PHYSICAL REVIEW APPLIED, 2018, 卷号: 10, 期号: 3, 页码: 034049
Authors: T. Park; Yong-Jing Guan; Zhi-Qiang Liu; Yong Zhang
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| Impurity resonant state p-doping layer for high-efficiency nitride-based light-emitting diodes 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018, 卷号: 33, 期号: 11, 页码: 114004
Authors: Zhiqiang Liu; Xiaoyan Yi ; Liancheng Wang ; Tongbo Wei ; Guodong Yuan ; Jianchang Yan ; Junxi Wang ; Jinmin Li ; Yi Shi; Yong Zhang
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| Modulation and optoelectronic properties of GaN-based light-emitting diodes on GaN template 期刊论文
APPLIED PHYSICS EXPRESS, 2018, 卷号: 11, 期号: 12, 页码: 122101
Authors: Shan Lin ; Haicheng Cao ; Jing Li ; Xuejiao Sun ; Huixin Xiu , Lixia Zhao
Adobe PDF(1323Kb) | Favorite | View/Download：27/1 | Submit date：2019/11/19 |
| Study on the structural, optical, and electrical properties of the yellow light-emitting diode grown on free-standing (0001) GaN substrate 期刊论文
Superlattices and Microstructures, 2018, 卷号: 116, 页码: 1-8
Authors: Gaoqiang Deng ; Yuantao Zhang ; Ye Yu ; Long Yan ; Pengchong Li ; Xu Han ; Liang Chen ; Degang Zhao ; Guotong Du
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| Significantly reduced in-plane tensile stress of GaN films grown on SiC substrates by using graded AlGaN buffer and SiN x interlayer 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 122, 页码: 74-79
Authors: Gaoqiang Deng ; Yuantao Zhang ; Ye Yu ; Zhen Huang ; Xu Han ; Liang Chen ; Long Yan ; Pengchong Li ; Xin Dong ; Degang Zhao ; Guotong Du
Adobe PDF(1151Kb) | Favorite | View/Download：11/0 | Submit date：2019/11/19 |
| Simulation and fabrication of N-polar GaN-based blue-green light- emitting diodes with p-type AlGaN electron blocking layer 期刊论文
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2018, 卷号: 29, 期号: 11, 页码: 9321-9325
Authors: Gaoqiang Deng; Yuantao Zhang; Ye Yu; Long Yan; Pengchong Li; Xu Han; Liang Chen; Degang Zhao; Guotong Du
Adobe PDF(1980Kb) | Favorite | View/Download：12/0 | Submit date：2019/11/19 |
| Growth of AlGaN-based multiple quantum wells on SiC substrates 期刊论文
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2018, 卷号: 29, 期号: 9, 页码: 7756-7762
Authors: Xu Han; Yuantao Zhang; Pengchong Li ; Long Yan ; Gaoqiang Deng ; Liang Chen ; Ye Yu ; Degang Zhao ; Jingzhi Yin
Adobe PDF(2869Kb) | Favorite | View/Download：14/0 | Submit date：2019/11/19 |
| 高重频光梳和微腔激器产生波研究 学位论文
, 中国科学院半导体研究所: 中国科学院大学, 2019
Authors: 韩浚源
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| 基于光域调控的可切换射频滤波技术研究 学位论文
, 中国科学院半导体研究所: 中国科学院大学, 2019
Authors: 王岭
Adobe PDF(4775Kb) | Favorite | View/Download：9/1 | Submit date：2019/11/19 |
| 窄线宽激光器稳频技术研究 学位论文
, 中国科学院半导体研究所: 中国科学院大学, 2019
Authors: 齐艺超
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| 无权访问的条目 学位论文
Authors: 刘磊
Adobe PDF(6739Kb) | Favorite | View/Download：0/0 | Submit date：2019/11/19 |
| 基于跳频技术的光链路物理层安全技术研究 学位论文
, 中国科学院半导体研究所: 中国科学院大学, 2019
Authors: 黄庆超
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| 无权访问的条目 学位论文
Authors: 刘凯宝
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| Significantly improved surface morphology of N-polar GaN film grown on SiC substrate by the optimization of V/III ratio 期刊论文
APPLIED PHYSICS LETTERS, 2018, 卷号: 112, 期号: 15, 页码: 151607
Authors: Gaoqiang Deng; Yuantao Zhang; Ye Yu; Long Yan; Pengchong Li; Xu Han; Liang Chen; Degang Zhao; Guotong Du
Adobe PDF(1266Kb) | Favorite | View/Download：10/0 | Submit date：2019/11/19 |
| Enhancement of the emission efficiency of InGaN films by suppressing the incorporation of unintentional gallium atoms 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 113, 页码: 34-40
Authors: J. Yang ; S.T. Liu ; X.W. Wang ; D.G. Zhao ; D.S. Jiang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; F. Liang ; W. Liu ; L.Q. Zhang ; H. Yang ; W.J. Wang ; M. Li
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| Improvement of thermal stability of InGaN/GaN multiple-quantum-well by reducing the density of threading dislocations 期刊论文
OPTICAL MATERIALS, 2018, 卷号: 85, 页码: 14-17
Authors: J. Yang ; D.G. Zhao; D.S. Jiang ; S.T. Liu ; P. Chen ; J.J. Zhu ; F. Liang ; W. Liu ; M. Li
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| Suppression the Leakage of Optical Field and Carriers in GaN-Based Laser Diodes by Using InGaN Barrier Layers 期刊论文
IEEE Photonics Journal, 2018, 卷号: 10, 期号: 4, 页码: 1503107
Authors: Jing Yang; Degang Zhao; Zongshum Liu; De-Sheng Jiang; Jianjun Zhu; Ping Chen; Feng Liang; S. T. Liu; Wei Liu; Yao Xing; Mo Li
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| The role of temperature ramp-up time before barrier layer growth in optical and structural properties of InGaN/GaN multi-quantum wells 期刊论文
Superlattices and Microstructures, 2018, 卷号: 117, 页码: 228-234
Authors: Yao Xing ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Jianjun Zhu ; Ping Chen ; Jing Yang ; Wei Liu ; Feng Liang ; Shuangtao Liu ; Liqun Zhang ; Wenjie Wang ; Mo Li ; Yuantao Zhang ; Guotong Du
Adobe PDF(1391Kb) | Favorite | View/Download：11/0 | Submit date：2019/11/19 |
| Influence of in doping in GaN barriers on luminescence properties of InGaN/GaN multiple quantum well LEDs 期刊论文
Superlattices and Microstructures, 2018, 卷号: 114, 页码: 32-36
Authors: Xiaowei Wang ; Jing Yang ; Degang Zhao ; Desheng Jiang ; Zongshun Liu ; Wei Liu ; Feng Liang; Shuangtao Liu ; Yao Xing ; Wenjie Wang ; Mo Li
Adobe PDF(705Kb) | Favorite | View/Download：14/0 | Submit date：2019/11/19 |
| Anomalous electroluminescent blue-shift behavior induced by well widths variance and localization effect in InGaN/GaN multi-quantum wells 期刊论文
OPTICS EXPRESS, 2018, 卷号: 26, 期号: 17, 页码: 21736-21744
Authors: LIYUAN PENG ; DEGANG ZHAO ; DESHENG JIANG ; JIANJUN ZHU ; ZONGSHUN LIU ; PING CHEN ; JING YANG ; WEI LIU ; FENG LIANG ; YAO XING ; SHUANGTAO LIU ; LIQUN ZHANG ; WENJIE WANG ; MO LI ; YUANTAO ZHANG ; GUOTONG DU
Adobe PDF(2599Kb) | Favorite | View/Download：12/0 | Submit date：2019/11/19 |
