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In Operando Micro-Raman Three-Dimensional Thermometry with Diffraction-Limit Spatial Resolution for GaN-based Light-Emitting Diodes 期刊论文
PHYSICAL REVIEW APPLIED, 2018, 卷号: 10, 期号: 3, 页码: 034049
Authors:  T. Park;   Yong-Jing Guan;   Zhi-Qiang Liu;   Yong Zhang
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Impurity resonant state p-doping layer for high-efficiency nitride-based light-emitting diodes 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018, 卷号: 33, 期号: 11, 页码: 114004
Authors:  Zhiqiang Liu;   Xiaoyan Yi ;   Liancheng Wang ;   Tongbo Wei ;   Guodong Yuan ;   Jianchang Yan ;   Junxi Wang ;   Jinmin Li ;   Yi Shi;   Yong Zhang
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Modulation and optoelectronic properties of GaN-based light-emitting diodes on GaN template 期刊论文
APPLIED PHYSICS EXPRESS, 2018, 卷号: 11, 期号: 12, 页码: 122101
Authors:  Shan Lin ;   Haicheng Cao ;   Jing Li ;   Xuejiao Sun ;   Huixin Xiu , Lixia Zhao
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Study on the structural, optical, and electrical properties of the yellow light-emitting diode grown on free-standing (0001) GaN substrate 期刊论文
Superlattices and Microstructures, 2018, 卷号: 116, 页码: 1-8
Authors:  Gaoqiang Deng ;   Yuantao Zhang ;   Ye Yu ;   Long Yan ;   Pengchong Li ;   Xu Han ;   Liang Chen ;   Degang Zhao ;   Guotong Du
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Significantly reduced in-plane tensile stress of GaN films grown on SiC substrates by using graded AlGaN buffer and SiN x interlayer 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 122, 页码: 74-79
Authors:  Gaoqiang Deng ;   Yuantao Zhang ;   Ye Yu ;   Zhen Huang ;   Xu Han ;   Liang Chen ;   Long Yan ;   Pengchong Li ;   Xin Dong ;   Degang Zhao ;   Guotong Du
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Simulation and fabrication of N-polar GaN-based blue-green light- emitting diodes with p-type AlGaN electron blocking layer 期刊论文
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2018, 卷号: 29, 期号: 11, 页码: 9321-9325
Authors:  Gaoqiang Deng;  Yuantao Zhang;  Ye Yu;  Long Yan;  Pengchong Li;  Xu Han;  Liang Chen;  Degang Zhao;  Guotong Du
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Growth of AlGaN-based multiple quantum wells on SiC substrates 期刊论文
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2018, 卷号: 29, 期号: 9, 页码: 7756-7762
Authors:  Xu Han;   Yuantao Zhang;   Pengchong Li ;   Long Yan ;   Gaoqiang Deng ;   Liang Chen ;   Ye Yu ;   Degang Zhao ;   Jingzhi Yin
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高重频光梳和微腔激器产生波研究 学位论文
, 中国科学院半导体研究所: 中国科学院大学, 2019
Authors:  韩浚源
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基于光域调控的可切换射频滤波技术研究 学位论文
, 中国科学院半导体研究所: 中国科学院大学, 2019
Authors:  王岭
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窄线宽激光器稳频技术研究 学位论文
, 中国科学院半导体研究所: 中国科学院大学, 2019
Authors:  齐艺超
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无权访问的条目 学位论文
Authors:  刘磊
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基于跳频技术的光链路物理层安全技术研究 学位论文
, 中国科学院半导体研究所: 中国科学院大学, 2019
Authors:  黄庆超
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无权访问的条目 学位论文
Authors:  刘凯宝
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Significantly improved surface morphology of N-polar GaN film grown on SiC substrate by the optimization of V/III ratio 期刊论文
APPLIED PHYSICS LETTERS, 2018, 卷号: 112, 期号: 15, 页码: 151607
Authors:  Gaoqiang Deng;   Yuantao Zhang;   Ye Yu;   Long Yan;   Pengchong Li;   Xu Han;   Liang Chen;   Degang Zhao;   Guotong Du
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Enhancement of the emission efficiency of InGaN films by suppressing the incorporation of unintentional gallium atoms 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 113, 页码: 34-40
Authors:  J. Yang ;   S.T. Liu ;   X.W. Wang ;   D.G. Zhao ;   D.S. Jiang ;   P. Chen ;   J.J. Zhu ;   Z.S. Liu ;   F. Liang ;   W. Liu ;   L.Q. Zhang ;   H. Yang ;   W.J. Wang ;   M. Li
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Improvement of thermal stability of InGaN/GaN multiple-quantum-well by reducing the density of threading dislocations 期刊论文
OPTICAL MATERIALS, 2018, 卷号: 85, 页码: 14-17
Authors:  J. Yang ;   D.G. Zhao;   D.S. Jiang ;   S.T. Liu ;   P. Chen ;   J.J. Zhu ;   F. Liang ;   W. Liu ;   M. Li
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Suppression the Leakage of Optical Field and Carriers in GaN-Based Laser Diodes by Using InGaN Barrier Layers 期刊论文
IEEE Photonics Journal, 2018, 卷号: 10, 期号: 4, 页码: 1503107
Authors:  Jing Yang;  Degang Zhao;  Zongshum Liu;  De-Sheng Jiang;  Jianjun Zhu;  Ping Chen;  Feng Liang;  S. T. Liu;  Wei Liu;  Yao Xing;  Mo Li
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The role of temperature ramp-up time before barrier layer growth in optical and structural properties of InGaN/GaN multi-quantum wells 期刊论文
Superlattices and Microstructures, 2018, 卷号: 117, 页码: 228-234
Authors:  Yao Xing ;   Degang Zhao ;   Desheng Jiang ;   Zongshun Liu ;   Jianjun Zhu ;   Ping Chen ;   Jing Yang ;   Wei Liu ;   Feng Liang ;   Shuangtao Liu ;   Liqun Zhang ;   Wenjie Wang ;   Mo Li ;   Yuantao Zhang ;   Guotong Du
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Influence of in doping in GaN barriers on luminescence properties of InGaN/GaN multiple quantum well LEDs 期刊论文
Superlattices and Microstructures, 2018, 卷号: 114, 页码: 32-36
Authors:  Xiaowei Wang ;   Jing Yang ;   Degang Zhao ;   Desheng Jiang ;   Zongshun Liu ;   Wei Liu ;   Feng Liang;   Shuangtao Liu ;   Yao Xing ;   Wenjie Wang ;   Mo Li
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Anomalous electroluminescent blue-shift behavior induced by well widths variance and localization effect in InGaN/GaN multi-quantum wells 期刊论文
OPTICS EXPRESS, 2018, 卷号: 26, 期号: 17, 页码: 21736-21744
Authors:  LIYUAN PENG ;   DEGANG ZHAO ;   DESHENG JIANG ;   JIANJUN ZHU ;   ZONGSHUN LIU ;   PING CHEN ;   JING YANG ;   WEI LIU ;   FENG LIANG ;   YAO XING ;   SHUANGTAO LIU ;   LIQUN ZHANG ;   WENJIE WANG ;   MO LI ;   YUANTAO ZHANG ;   GUOTONG DU
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