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用于半导体光放大器的宽增益谱量子点材料结构 专利
专利类型: 发明, 专利号: CN200910081987.3, 公开日期: 2011-08-31
Inventors:  刘王来;  叶小玲;  徐波;  王占国
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二维GaAs基光子晶体微腔的制作与光谱特性分析 期刊论文
物理学报, 2010, 卷号: 59, 期号: 10, 页码: 7073-7077
Authors:  彭银生;  叶小玲;  徐波;  牛洁斌;  贾锐;  王占国;  梁松;  杨晓红
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Optimization of inductively coupled plasma etching for low nanometer scale air-hole arrays in two-dimensional GaAs-based photonic crystals 期刊论文
Journal of Semiconductors, 2010, 卷号: 31, 期号: 1, 页码: 012003-1-012003-5
Authors:  Peng Yinsheng;  Ye Xiaoling;  Xu Bo;  Jin Peng;  Niu Jiebin;  Jia Rui;  Wang Zhanguo
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Anomalous Temperature Dependence of Photoluminescence in InAs/InAlGaAs/InP Quantum Wire and Dot Hybrid Nanostructures 期刊论文
CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 2, 页码: Article no.27801
Authors:  Yang XR;  Xu B;  Wang HF;  Zhao GQ;  Shi SH;  Shen XZ;  Li JF;  Wang ZG;  Yang, XR, Handan Coll, Dept Phys & Elect Engn, Handan 056005, Peoples R China. yangxr1976@126.com
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Continuous-wave Operation  Emission  Lasers  Wavelength  Excitons  Energy  
Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 318, 期号: 1, 页码: 572-575
Authors:  Zhou HY;  Qu SC;  Jin P;  Xu B;  Ye XL;  Liu JP;  Wang ZG;  Qu, SC, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. qsc@semi.ac
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Atom Force Microscopy  Nanostructures  Molecular-beam Epitaxy  Nanomaterials  Semiconducting Gallium Arsenide  Quantum-dots  Anodic Alumina  Arrays  Placement  Inas  
Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 8, 页码: Article no.83501
Authors:  Zhou XL;  Chen YH;  Zhang HY;  Zhou GY;  Li TF;  Liu JQ;  Ye XL;  Xu B;  Wang ZG;  Zhou, XL, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. zhouxl06@semi.ac.cn
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Inas Islands  Mu-m  Escape  Gaas  Gaas(100)  Substrate  
Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 9, 页码: Article no.94311
Authors:  Zhou XL;  Chen YH;  Li TF;  Zhou GY;  Zhang HY;  Ye XL;  Xu B;  Wang ZG;  Zhou, XL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. zhouxl06@semi.ac.cn
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Self-organized Islands  Molecular-beam-epitaxy  Optical-properties  Surfaces  Emission  Density  Size  
EL2光淬灭过程中光电导增强现象原因新探 期刊论文
半导体学报, 1994, 卷号: 15, 期号: 5, 页码: 322
Authors:  徐波;  王占国;  万寿科;  孙虹;  张辉;  杨锡权;  林兰英;  Koutzarov I P
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高电子迁移率GaAs/AlxGa(1-x)As二维电子气(2DEG)异质结结构参数优化研究 期刊论文
半导体学报, 1995, 卷号: 16, 期号: 9, 页码: 706
Authors:  杨斌;  王占国;  陈涌海;  梁基本;  廖奇为;  林兰英;  朱战萍;  徐波;  李伟
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高温连续输出AlGaAs大功率单量子阱激光器的工作特性 期刊论文
半导体学报, 1997, 卷号: 18, 期号: 5, 页码: 391
Authors:  朱东海;  王占国;  梁基本;  徐波;  朱战萍;  张隽;  龚谦;  金才政;  丛立方;  胡雄伟;  韩勤;  方祖捷;  刘斌;  屠玉珍
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808nmGaAs/AlGaAs大功率半导体激光器波长的影响因素及控制 期刊论文
半导体学报, 1997, 卷号: 18, 期号: 2, 页码: 108
Authors:  朱东海;  梁基本;  徐波;  朱战萍;  张隽;  龚谦;  李胜英;  王占国
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MBE自组织生长多层竖直自对准InAs量子点结构的研究 期刊论文
发光学报, 1997, 卷号: 18, 期号: 3, 页码: 228
Authors:  朱东海;  范缇文;  梁基本;  徐波;  朱战萍;  龚谦;  江潮;  李含轩;  周伟;  王占国
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HEMT结构材料中二维电子气的输运性质研究 期刊论文
半导体学报, 1999, 卷号: 20, 期号: 4, 页码: 292
Authors:  张兴宏;  夏冠群;  徐元森;  徐波;  杨玉芬;  王占国
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InAs量子点的原子力显微镜测试结果分析 期刊论文
半导体学报, 1999, 卷号: 662, 期号: 0
Authors:  龚谦;  梁基本;  徐波;  丁鼎;  王占国;  裘晓辉;  商广义;  白春礼
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大功率In(Ga)As/GaAs量子点激光器 期刊论文
半导体学报, 2000, 卷号: 21, 期号: 8, 页码: 827
Authors:  王占国;  刘峰奇;  梁基本;  徐波;  丁鼎;  龚谦;  韩勤
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快速热退火对带有 InGaAs盖层的 InAs/GaAs量子点发光特性的影响(英文) 期刊论文
半导体学报, 2001, 卷号: 22, 期号: 6, 页码: 684
Authors:  魏永强;  刘会云;  徐波;  丁鼎;  梁基本;  王占国
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红光InAlAs量子点的结构和光学性质 期刊论文
发光学报, 1999, 卷号: 20, 期号: 3, 页码: 230
Authors:  周伟;  梁基本;  徐波;  龚谦;  李含轩;  刘峰奇;  姜卫红;  江潮;  许怀哲;  丁鼎;  张金福;  王占国
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量子点激光器及其应用研究 期刊论文
高技术通讯, 2000, 卷号: 10, 期号: 4, 页码: 91
Authors:  梁基本;  徐波;  龚谦;  韩勤;  周伟;  姜卫红;  刘会云;  王占国
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1.08μm InAs/GaAs量子点激光器光学特性研究 期刊论文
功能材料与器件学报, 2000, 卷号: 6, 期号: 3, 页码: 243
Authors:  钱家骏;  叶小玲;  徐波;  韩勤;  陈涌海;  丁鼎;  梁基本;  刘峰奇;  张金福;  张秀兰;  王占国
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自组装InAs/GaAs量子点材料和量子点激光器 期刊论文
中国科学. A辑,数学, 2000, 卷号: 30, 期号: 7, 页码: 644
Authors:  王占国;  刘峰奇;  梁基本;  徐波
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