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纳米折叠InGaN/GaN LED材料生长及器件特性 期刊论文
物理学报, 2011, 卷号: 60, 期号: 7, 页码: 076104-1-076104-4
Authors:  陈贵锋;  谭小动;  万尾甜;  沈俊;  郝秋艳;  唐成春;  朱建军;  刘宗顺;  赵德刚;  张书明
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246nm p-i-n型背照AlGaN太阳盲紫外探测器的研制 期刊论文
红外与激光工程, 2011, 卷号: 40, 期号: 1, 页码: 32-35
Authors:  颜廷静;  种明;  赵德刚;  张爽;  陈良惠
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一种测量p-GaN载流子浓度的方法 期刊论文
物理学报, 2011, 卷号: 60, 期号: 3, 页码: 721-728
Authors:  周梅;  赵德刚
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器件参数对GaN基n+-GaN/i-Alx Ga1-xN/n+-GaN结构紫外和红外双色探测器中紫外响应的影响 期刊论文
物理学报, 2010, 卷号: 59, 期号: 12, 页码: 8903-8909
Authors:  邓懿;  赵德刚;  吴亮亮;  刘宗顺;  朱建军;  江德生;  张书明;  梁骏吾
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高阻氮化镓外延层的异常光吸收 期刊论文
物理学报, 2010, 卷号: 59, 期号: 11, 页码: 8048-8051
Authors:  刘文宝;  赵德刚;  江德生;  刘宗顺;  朱建军;  张书明;  杨辉
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Time delay in InGaN multiple quantum well laser diodes at room temperature 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 12, 页码: Article no.124211
Authors:  Jin LA;  Jiang DS;  Zhang ZM;  Liu ZS;  Zeng C;  Zhao DG;  Zhu JJ;  Wang H;  Duan LH;  Yang H;  Jin, LA, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. jilian@red.semi.ac.cn
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Ingan  Laser Diode  Delay Effect  Saturable Absorber  Traps  Light Emission  
Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2011, 卷号: 509, 期号: 3, 页码: 748-750
Authors:  Deng Y;  Zhao DG;  Le LC;  Jiang DS;  Wu LL;  Zhu JJ;  Wang H;  Liu ZS;  Zhang SM;  Yang H;  Liang JW;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. dgzhao@red.semi.ac.cn
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Nitride Materials  Crystal Growth  Composition Fluctuations  X-ray Diffraction  Layer  
Effects of AlGaN layer parameter on ultraviolet response of n(+)-GaN/i-AlxGa1 (-) N-x/n(+)-GaN structure ultraviolet-infrared photodetector 期刊论文
ACTA PHYSICA SINICA, 2010, 卷号: 59, 期号: 12, 页码: 8903-8909
Authors:  Deng Y;  Zhao DG;  Wu LL;  Liu ZS;  Zhu JJ;  Jiang DS;  Zhang SM;  Liang JW;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. dgzhao@red.semi.ac.cn
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Gan  Ultraviolet And Infrared Photodetector  Quantum Efficiency  Solar-blind  
Light extraction efficiency improvement and strain relaxation in InGaN/GaN multiple quantum well nanopillars 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 8, 页码: Article no.84339
Authors:  Zhu JH;  Wang LJ;  Zhang SM;  Wang H;  Zhao DG;  Zhu JJ;  Liu ZS;  Jiang DS;  Yang H;  Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. smzhang@red.semi.ac.cn
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The investigation on carrier distribution in InGaN/GaN multiple quantum well layers 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 9, 页码: Article no.93117
Authors:  Zhu JH;  Zhang SM;  Wang H;  Zhao DG;  Zhu JJ;  Liu ZS;  Jiang DS;  Qiu YX;  Yang H;  Zhang, SM, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. smzhang@red.semi.ac.cn
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Diodes  Efficiency  
立方相Al_xGa_(1-x)N/GaAs(100)的光致发光研究 期刊论文
半导体学报, 1999, 卷号: 723, 期号: 0
Authors:  赵德刚;  杨辉;  徐大鹏;  李建斌;  王玉田;  郑联喜;  李顺峰;  王启明
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Strain Analysis of Cubic AlGaN/GaNGrownon GaAs(100) Substrate by MOVPE 期刊论文
半导体学报, 1999, 卷号: 20, 期号: 10, 页码: 921
Authors:  徐大鹏;  杨辉;  赵德刚;  郑联喜;  李建斌;  王玉田;  李顺峰;  吴荣汉
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高质量立方相InGaN的生长 期刊论文
半导体学报, 2000, 卷号: 21, 期号: 6, 页码: 548
Authors:  李顺峰;  杨辉;  徐大鹏;  赵德刚;  孙小玲;  王玉田;  张书明
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立方相 Al_xGa_(1-x)N/GaAs(100)的MOVCD外延生长 期刊论文
半导体学报, 2002, 卷号: 23, 期号: 2, 页码: 161-164
Authors:  冯志宏;  杨辉;  徐大鹏;  赵德刚;  王海;  段俐宏
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GaN/GaAs(001)与GaN/Al_2O_3(0001)外延层光辅助湿法腐蚀行为的比较 期刊论文
半导体学报, 2002, 卷号: 23, 期号: 8, 页码: 881-885
Authors:  沈晓明;  张秀兰;  孙元平;  赵德刚;  冯淦;  张宝顺;  张泽洪;  冯志宏;  杨辉
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GaAs吸收衬底生长的立方相GaN发光二极管的工艺设计与实现 期刊论文
半导体学报, 2002, 卷号: 23, 期号: 9, 页码: 1001-1005
Authors:  孙元平;  张泽洪;  赵德刚;  冯志宏;  付羿;  张书明;  杨辉
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GaAs衬底生长的立方GaN晶片键合技术 期刊论文
中国科学. E辑,技术科学, 2002, 卷号: 32, 期号: 5, 页码: 584-589
Authors:  孙元平;  付羿;  渠波;  王玉田;  冯玉宏;  赵德刚;  郑新和;  段俐宏;  李秉臣;  张书明;  杨辉;  姜晓明;  郑文莉;  贾全杰
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GaN横向外延中晶面倾斜的形成机制 期刊论文
中国科学. A辑,数学, 2002, 卷号: 32, 期号: 8, 页码: 737-742
Authors:  冯淦;  郑新和;  朱建军;  沈晓明;  张宝顺;  赵德刚;  孙元平;  张泽洪;  王玉田;  杨辉;  梁骏吾
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GaN外延膜厚度的x射线双晶衍射测量 期刊论文
中国科学. G辑,物理, 2003, 卷号: 33, 期号: 2, 页码: 122-125
Authors:  冯淦;  朱建军;  沈晓明;  张宝顺;  赵德刚;  王玉田;  杨辉;  梁骏吾
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Pt/n-GaN肖特基接触的退火行为 期刊论文
半导体学报, 2003, 卷号: 24, 期号: 3, 页码: 279-283
Authors:  张泽洪;  孙元平;  赵德刚;  段俐宏;  王俊;  沈晓明;  冯淦;  冯志宏;  杨辉
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