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一种提高光栅外腔激光器光学质量的方法 专利
专利类型: 发明, 专利号: CN200910236704.8, 公开日期: 2011-08-31
Inventors:  吕雪芹;  金鹏;  王占国
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光伏型InAs量子点红外探测器结构 专利
专利类型: 发明, 专利号: CN200910242347.6, 公开日期: 2011-08-31
Inventors:  唐光华;  徐波;  叶小玲;  金鹏;  刘峰奇;  陈涌海;  王占国;  姜立稳;  孔金霞;  孔宁
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二次退火制备I I I-V族半导体量子点 期刊论文
人工晶体学报, 2010, 卷号: 39, 期号: 3, 页码: 747-750
Authors:  肖虎;  孟宪权;  朱振华;  金鹏;  刘峰奇;  王占国
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超辐射发光二极管的应用 期刊论文
红外技术, 2010, 卷号: 32, 期号: 5, 页码: 297-303
Authors:  王佐才;  吕雪芹;  金鹏;  王占国
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Optimization of inductively coupled plasma etching for low nanometer scale air-hole arrays in two-dimensional GaAs-based photonic crystals 期刊论文
Journal of Semiconductors, 2010, 卷号: 31, 期号: 1, 页码: 012003-1-012003-5
Authors:  Peng Yinsheng;  Ye Xiaoling;  Xu Bo;  Jin Peng;  Niu Jiebin;  Jia Rui;  Wang Zhanguo
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Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 6, 页码: Art. No. 064202
Authors:  Wu J;  Lu XQ;  Jin P;  Meng XQ;  Wang ZG
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Light-emitting-diodes  Optical-properties  Tuning Range  Nm  Emission  Spectrum  Spectroscopy  
Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy 期刊论文
APPLIED SURFACE SCIENCE, 2011, 卷号: 257, 期号: 20, 页码: 8718-8721
Authors:  Pan X;  Wang XL;  Xiao HL;  Wang CM;  Yang CB;  Li W;  Wang WY;  Jin P;  Wang ZG
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Photoluminescence  Raman Scattering  Pulsed Atomic Layer Epitaxy  Algan Alloys  
The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 7, 页码: Article no.71914
Authors:  Zhou GY;  Chen YH;  Yu JL;  Zhou XL;  Ye XL;  Jin P;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. yhchen@semi.ac.cn
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Spectroscopy  
Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 318, 期号: 1, 页码: 572-575
Authors:  Zhou HY;  Qu SC;  Jin P;  Xu B;  Ye XL;  Liu JP;  Wang ZG;  Qu, SC, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. qsc@semi.ac
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Atom Force Microscopy  Nanostructures  Molecular-beam Epitaxy  Nanomaterials  Semiconducting Gallium Arsenide  Quantum-dots  Anodic Alumina  Arrays  Placement  Inas  
用Franz-Keldysh效应研究GaAs表面硫化学钝化 期刊论文
半导体学报, 1999, 卷号: 20, 期号: 11, 页码: 1004
Authors:  廖友贵;  金鹏;  李乙钢;  张存洲;  潘士宏;  梁基本
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SIN~+GaAs结构中的Franz-Keldysh振荡的傅里叶变换研究 期刊论文
物理学报, 2000, 卷号: 49, 期号: 9, 页码: 1821
Authors:  金鹏;  潘士宏;  梁基本
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利用GaAs基上InGaAs应变层制备有序排列的InAs量子点 期刊论文
半导体学报, 2004, 卷号: 25, 期号: 12, 页码: 1647-1651
Authors:  张春玲;  赵凤瑗;  徐波;  金鹏;  王占国
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自组装半导体量子点的电子学性质研究进展 期刊论文
金属学报, 2005, 卷号: 41, 期号: 5, 页码: 463-470
Authors:  孙捷;  金鹏;  王占国
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Wet Oxidation of AlxGa1-xAs/GaAs Distributed Bragg Reflectors 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 8, 页码: 1519-1523
Authors:  Li Yuoyuan;  Wang Zhanguo;  Xu Bo;  Jin Peng;  Zhang Chunling;  Guo Xia;  Chen Min
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Room Temperature Operation of Strain-Compensated 5.5μm Quantum Cascade Lasers 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 12, 页码: 2267-2270
Authors:  Lu Xiuzhen;  Liu Fengqi;  Liu Junqi;  Jin Peng;  Wang Zhanguo
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GaAs基上的InAs量子环制备 期刊论文
固体电子学研究与进展, 2006, 卷号: 26, 期号: 4, 页码: 432-435
Authors:  李凯;  叶小玲;  金鹏;  王占国
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A面(11-20)ZnO薄膜中杂质的偏振PL谱研究 期刊论文
光散射学报, 2008, 卷号: 20, 期号: 2, 页码: 186-189
Authors:  周立;  陈涌海;  金鹏;  王占国
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InAs/GaAs量子点光致发光光谱多峰结构发光本质 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 11, 页码: 2121-2124
Authors:  梁志梅;  吴巨;  金鹏;  吕雪芹;  王占国
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Influence of In0.2Ga0.8As strain-reducing layer on the active region of quantum dot superluminescent diodes 会议论文
QUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES, 737, BOSTON, MA, DEC 02, 2001-DEC 05, 2002
Authors:  Zhang ZY;  Li CM;  Jin P;  Meng XQ;  Xu B;  Ye XL;  Wang ZG;  Zhang ZY Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China.
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Spectrum  
Upconversion emission of a Er3+-doped glass microsphere under 633 nm excitation 会议论文
MICROELECTRONICS JOURNAL, 35 (4), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
Authors:  Wang JY;  Ji GR;  Jin P;  Zhao LJ;  Zhang CZ;  Wang JY Bewing Univ Technol Coll Appl Sci Beijing 100022 Peoples R China. 电子邮箱地址: wangjiyou@bjut.edu.cn
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Upconversion  Doped-er3++ Glass Microsphere  Morphology-dependent Resonances