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Monolithic integration of InGaAs/InP multiple quantum wells on SOI substrates for photonic devices 期刊论文
JOURNAL OF APPLIED PHYSICS, 2018, 卷号: 123, 期号: 5, 页码: 053102
Authors:  Zhibo Li;   Mengqi Wang;   Xin Fang;   Yajie Li;   Xuliang Zhou;   Hongyan Yu;   Pengfei Wang;   Wei Wang;   Jiaoqing Pan
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Measurement of the Overhauser field in a two-dimensional electron system at weak magnetic fields 期刊论文
JOURNAL OF APPLIED PHYSICS, 2018, 卷号: 124, 期号: 16, 页码: 163909
Authors:  Xuan Qian; Yang Ji
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Reversible transition between coherently strained BiFeO3 and the metastable pseudotetragonal phase on (LaAlO3)0.3(Sr2AlTaO6)0.7 (001) 期刊论文
JOURNAL OF APPLIED PHYSICS, 2017, 卷号: 121, 页码: 054102
Authors:  Z. Fu;  Z. G. Yin;  X. W. Zhang;  N. F. Chen;  Y. J. Zhao;  Y. M. Bai;  D. Y. Zhao;  H. F. Zhang;  Y. D. Yuan;  Y. N. Chen;  J. L. Wu;  J. B. You
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Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes 期刊论文
JOURNAL OF APPLIED PHYSICS, 2015, 卷号: 117, 页码: 073101
Authors:  Panpan Li;  Hongjian Li;  Zhi Li;  Junjie Kang;  Xiaoyan Yi;  Jinmin Li;  Guohong Wang
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Coupling and single-photon purity of a quantum dot-cavity system studied using hydrostatic pressure 期刊论文
JOURNAL OF APPLIED PHYSICS, 2015, 卷号: 117, 期号: 1, 页码: 014304
Authors:  P. Y. Zhou;  X. F. Wu;  K. Ding;  X. M. Dou;  G. W. Zha;  H. Q. Ni;  Z. C. Niu;  H. J. Zhu;  D. S. Jiang;  C. L. Zhao;  B. Q. Sun
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Tuning of in-plane optical anisotropy by inserting ultra-thin InAs layer at interfaces in (001)-grown GaAs/AlGaAs quantum wells 期刊论文
JOURNAL OF APPLIED PHYSICS, 2015, 卷号: 117, 页码: 015302
Authors:  J.L. Yu;  S.Y. Cheng;  Y.F. Lai;  Q. Zheng;  Y.H. Chen;  C.G. Tang
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Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness 期刊论文
JOURNAL OF APPLIED PHYSICS, 2015, 卷号: 117, 页码: 055709
Authors:  J. Yang;  D. G. Zhao;  D. S. Jiang;  P. Chen;  J. J. Zhu;  Z. S. Liu;  L. C. Le;  X. J. Li;  X. G. He;  J. P. Liu;  H. Yang;  Y. T. Zhang;  G. T. Du
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Comparative studies of band structures for biaxial (100)-, (110)-, and (111)-strained GeSn: A first-principles calculation with GGA1U approach 期刊论文
JOURNAL OF APPLIED PHYSICS, 2015, 卷号: 118, 期号: 16, 页码: 107403
Authors:  Wenqi Huang;  Buwen Cheng;  Chunlai Xue;  Zhi Liu
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Tunable and angle-insensitive plasmon resonances in graphene ribbon arrays with multispectral diffraction response 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 115, 期号: 10, 页码: 104306
Authors:  Li, KW;  Ma, XP;  Zhang, ZY;  Xu, Y;  Song, GF
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Spin and valley transport in monolayers of MoS2 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 115, 期号: 13, 页码: 133703
Authors:  Sun, JF;  Cheng, F
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Chemical states and ferromagnetism in heavily Mn-substituted zinc oxide thin films 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 115, 期号: 15, 页码: 153902
Authors:  Shao, Q;  Ku, PS;  Wang, XL;  Zapien, JA;  Leung, CW;  Borgatti, F;  Gambardella, A;  Dediu, V;  Ciprian, R;  Ruotolo, A
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Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 115, 期号: 12, 页码: 123101
Authors:  Wu, K;  Wei, TB;  Zheng, HY;  Lan, D;  Wei, XC;  Hu, Q;  Lu, HX;  Wang, JX;  Luo, Y;  Li, JM
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Photoluminescence enhancement of the single InAs quantum dots through plasmonic Au island films 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 115, 期号: 12, 页码: 123104
Authors:  Wang, HY;  Dou, XM;  Yang, S;  Su, D;  Jiang, DS;  Ni, HQ;  Niu, ZC;  Sun, BQ
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Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 115, 期号: 16, 页码: 163704
Authors:  Yang, J;  Zhao, DG;  Jiang, DS;  Zhu, JJ;  Yang, H;  Chen, P;  Liu, ZS;  Le, LC;  Li, XJ;  He, XG;  Liu, JP;  Zhang, SM;  Wang, H
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Analysis of InGaN light-emitting diodes with GaN-AlGaN and AlGaN-GaN composition-graded barriers 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 115, 期号: 23, 页码: 233102
Authors:  Yang, YJ;  Wang, JX;  Li, JM;  Zeng, YP
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Valley polarization in graphene-silicene-graphene heterojunction in zigzag nanoribbon 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 115, 期号: 23, 页码: 233702
Authors:  Shen, M;  Zhang, YY;  An, XT;  Liu, JJ;  Li, SS
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Two-dimensional electron and hole gases in InxGa1-xN/AlyGa1-yN/GaN heterostructure for enhancement mode operation 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 116, 期号: 5, 页码: 054502
Authors:  Yan, JD;  Wang, XL;  Wang, Q;  Qu, SQ;  Xiao, HL;  Peng, EC;  Kang, H;  Wang, CM;  Feng, C;  Yin, HB;  Jiang, LJ;  Li, BQ;  Wang, ZG;  Hou, X
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Study of the one dimensional electron gas arrays confined by steps in vicinal GaN/AlGaN heterointerfaces 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 115, 期号: 19, 页码: 193704
Authors:  Li, HJ;  Zhao, GJ;  Liu, GP;  Wei, HY;  Jiao, CM;  Yang, SY;  Wang, LS;  Zhu, QS
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Negative differential resistance and resistance switching behaviors in BaTiO3 thin films 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 115, 期号: 20
Authors:  Yang, G;  Jia, CH;  Chen, YH;  Chen, X;  Zhang, WF
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Anisotropic elastic scattering of stripe/line-shaped scatters to two-dimensional electron gas: Model and illustrations in a nonpolar AlGaN/GaN hetero-junction 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 116, 期号: 9, 页码: 093705
Authors:  Zhang, JF;  Li, Y;  Yan, R;  Liu, GP;  Nie, YH;  Zhang, JC;  Hao, Y
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