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| 无权访问的条目 期刊论文 作者: Peng Yinsheng; Ye Xiaoling; Xu Bo; Jin Peng; Niu Jiebin; Jia Rui; Wang Zhanguo Adobe PDF(351Kb)  |  收藏  |  浏览/下载:1382/311  |  提交时间:2011/08/16 |
| 无权访问的条目 期刊论文 作者: Yang XR; Xu B; Wang HF; Zhao GQ; Shi SH; Shen XZ; Li JF; Wang ZG; Yang, XR, Handan Coll, Dept Phys & Elect Engn, Handan 056005, Peoples R China. yangxr1976@126.com Adobe PDF(483Kb)  |  收藏  |  浏览/下载:1565/327  |  提交时间:2011/07/05 |
| 无权访问的条目 期刊论文 作者: Zhou HY; Qu SC; Jin P; Xu B; Ye XL; Liu JP; Wang ZG; Qu, SC, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. qsc@semi.ac Adobe PDF(584Kb)  |  收藏  |  浏览/下载:1599/365  |  提交时间:2011/07/05 |
| 无权访问的条目 期刊论文 作者: Zhou XL; Chen YH; Zhang HY; Zhou GY; Li TF; Liu JQ; Ye XL; Xu B; Wang ZG; Zhou, XL, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. zhouxl06@semi.ac.cn Adobe PDF(1941Kb)  |  收藏  |  浏览/下载:1621/395  |  提交时间:2011/07/05 |
| 无权访问的条目 期刊论文 作者: Zhou XL; Chen YH; Li TF; Zhou GY; Zhang HY; Ye XL; Xu B; Wang ZG; Zhou, XL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. zhouxl06@semi.ac.cn Adobe PDF(2010Kb)  |  收藏  |  浏览/下载:1431/281  |  提交时间:2011/07/05 |
| 无权访问的条目 期刊论文 作者: 杨斌; 王占国; 陈涌海; 梁基本; 廖奇为; 林兰英; 朱战萍; 徐波; 李伟 Adobe PDF(271Kb)  |  收藏  |  浏览/下载:1030/333  |  提交时间:2010/11/23 |
| 无权访问的条目 期刊论文 作者: Su Yongchun; Yao Jianghong; Lin Yaowang; Xing Xiaodong; Pi Biao; Xu Bo; Wang Zhanguo; Xu Jingjun Adobe PDF(217Kb)  |  收藏  |  浏览/下载:895/368  |  提交时间:2010/11/23 |
| 无权访问的条目 期刊论文 作者: Li Yuoyuan; Wang Zhanguo; Xu Bo; Jin Peng; Zhang Chunling; Guo Xia; Chen Min Adobe PDF(519Kb)  |  收藏  |  浏览/下载:1201/289  |  提交时间:2010/11/23 |
| 无权访问的条目 期刊论文 作者: Liu Wanglai; Xu Bo; Liang Ping; Hu Ying; Sun Hong; Lü Xueqin; Wang Zhanguo Adobe PDF(461Kb)  |  收藏  |  浏览/下载:1038/287  |  提交时间:2010/11/23 |
| Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix 会议论文 APPLIED SURFACE SCIENCE, 123, CARDIFF, WALES, JUN 23-27, 1997 作者: Chen YH; Yang Z; Wang ZG; Xu B; Liang JB; Qian JJ; Chen YH Hong Kong Univ Sci & Technol Dept Phys Clear Water Bay Kowloon Hong Kong. Adobe PDF(241Kb)  |  收藏  |  浏览/下载:1297/301  |  提交时间:2010/11/15 Znse/gaas Interface States |
| Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001) 会议论文 JOURNAL OF ELECTRONIC MATERIALS, 28 (5), CHARLOTTESVILLE, VIRGINIA, JUN 24-26, 1998 作者: Zhou W; Xu B; Xu HZ; Liu FQ; Liang JB; Wang ZG; Zhu ZZ; Li GH; Zhou W Chinese Acad Sci Lab Semicond Mat Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. Adobe PDF(214Kb)  |  收藏  |  浏览/下载:1396/231  |  提交时间:2010/11/15 Bimodal Distribution Photoluminescence (Pl) Quantum-size Effect Ge Ensembles Si(100) Growth Shape |
| Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates 会议论文 PHYSICA E, 8 (2), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999 作者: Sun ZZ; Liu FQ; Wu J; Ye XL; Ding D; Xu B; Liang JB; Wang ZG; Sun ZZ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. Adobe PDF(192Kb)  |  收藏  |  浏览/下载:1314/262  |  提交时间:2010/11/15 Self-assembled Quantum Dots Inp Substrate High Index Mbe In(Ga Molecular-beam-epitaxy Al)as/inAlas/inp Vapor-phase Epitaxy Gaas Islands Photoluminescence Inp(001) Growth Lasers |
| Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy 会议论文 PHYSICA E, 8 (2), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999 作者: Jiang WH; Xu HZ; Xu B; Ye XL; Zhou W; Ding D; Liang JB; Wang ZG; Jiang WH Chinese Acad Sci Inst Semicond Inst Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. Adobe PDF(320Kb)  |  收藏  |  浏览/下载:1320/285  |  提交时间:2010/11/15 Quantum Dots High Index Molecular Beam Epitaxy Photoluminescence Surface Segregation Oriented Gaas Ingaas Islands Wells Disks |
| Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer 会议论文 JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000 作者: Liu HY; Xu B; Ding D; Chen YH; Zhang JF; Wu J; Wang ZG; Liu HY Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. Adobe PDF(222Kb)  |  收藏  |  浏览/下载:1262/319  |  提交时间:2010/11/15 Low Dimensional Structures Molecular Beam Epitaxy Nanomaterials Inas Islands Gaas Growth Gaas(100) Thickness Density |
| Self-assembled quantum dots, wires and quantum-dot lasers 会议论文 JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000 作者: Wang ZG; Chen YH; Liu FQ; Xu B; Wang ZG Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. Adobe PDF(289Kb)  |  收藏  |  浏览/下载:1279/323  |  提交时间:2010/11/15 Low Dimensional Structures Strain Molecular Beam Epitaxy Quantum Dots Semiconducting Iii-v Materials Laser Diodes Well Lasers |
| Self-assembled InAs quantum wires on InP(001) 会议论文 SIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS, CANBERRA, AUSTRALIA, JUL 03-07, 2000 作者: Wu J; Zeng YP; Sun ZZ; Lin F; Xu B; Wang ZG; Wu J Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. Adobe PDF(359Kb)  |  收藏  |  浏览/下载:1155/239  |  提交时间:2010/11/15 Short-period Superlattices Vapor-phase Epitaxy Gaas Islands State |
| Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry 会议论文 MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 91, RIMINI, ITALY, SEP 24-28, 2001 作者: Ye XL; Chen YH; Xu B; Wang ZG; Chen YH Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. Adobe PDF(125Kb)  |  收藏  |  浏览/下载:1052/220  |  提交时间:2010/11/15 Reflectance-difference Spectroscopy Indium Segregation Ingaas/gaas Quantum Wells Epitaxy-grown Ingaas/gaas Surface Segregation Interface |
| Room-temperature continuous-wave lasing from InAs GaAs quantum dot laser grown by molecular beam epitaxy 会议论文 1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, BEIJING, PEOPLES R CHINA, OCT 21-23, 1998 作者: Gong Q; Liang JB; Xu B; Wang ZG; Gong Q Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. Adobe PDF(114Kb)  |  收藏  |  浏览/下载:939/177  |  提交时间:2010/10/29 Threshold Operation Layer |
| High power continuous-wave operation of self-organized In(Ga)As/GaAs quantum dot lasers 会议论文 1999 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS, SHATIN, HONG KONG, 36337 作者: Wang ZG; Liang JB; Qian G; Xu B; Wang ZG Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. Adobe PDF(114Kb)  |  收藏  |  浏览/下载:1034/176  |  提交时间:2010/10/29 |
| Influence of In0.2Ga0.8As strain-reducing layer on the active region of quantum dot superluminescent diodes 会议论文 QUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES, 737, BOSTON, MA, DEC 02, 2001-DEC 05, 2002 作者: Zhang ZY; Li CM; Jin P; Meng XQ; Xu B; Ye XL; Wang ZG; Zhang ZY Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China. Adobe PDF(47Kb)  |  收藏  |  浏览/下载:1409/302  |  提交时间:2010/10/29 Spectrum |