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Process optimization for homoepitaxial growth of thick 4H-SiC films via hydrogen chloride chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2018, 卷号: 504, 页码: 7-12
Authors:  X.F. Liu ;   G.G. Yan ;   B. Liu ;   Z.W. Shen ;   Z.X. Wen ;   J. Chen ;   W.S. Zhao ;   L. Wang ;   F. Zhang ;   G.S. Sun ;   Y.P. Zeng
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Epitaxial growth of non-polar m-plane AIN film on bare and ZnO buffered m-sapphire 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 391, 页码: 111-115
Authors:  Wang, HT;  Jia, CH;  Xu, JK;  Chen, YH;  Chen, XW;  Zhang, WF
Favorite  |  View/Download:256/4  |  Submit date:2015/04/02
Single-crystalline GaN nanotube arrays grown on c-Al2O3 substrates using InN nanorods as templates 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 389, 页码: 1-4
Authors:  Li, HJ;  Liu, CB;  Liu, GP;  Wei, HY;  Jiao, CM;  Wang, JX;  Zhang, H;  Jin, DD;  Feng, YX;  Yang, SY;  Wang, LS;  Zhu, QS;  Wang, ZG
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The self-seeded growth of InAsSb nanowires on silicon by metal-organic vapor phase epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 396, 页码: 33-37
Authors:  Du, WN;  Yang, XG;  Wang, XY;  Pan, HY;  Ji, HM;  Luo, S;  Yang, T;  Wang, ZG
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Efficiency improvement of InGaN light emitting diodes with embedded self-assembled SiO2 nanosphere arrays 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 394, 页码: 7-10
Authors:  Zhang, YH;  Wei, TB;  Wang, JX;  Fan, C;  Chen, Y;  Hu, Q;  Li, JM
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Thickness influence of thermal oxide layers on the formation of self-catalyzed InAs nanowires on Si(111) by MOCVD 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 395, 页码: 55-60
Authors:  Wang, XY;  Yang, XG;  Du, WN;  Ji, HM;  Luo, S;  Yang, T
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AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 395, 页码: 9-13
Authors:  Dong, P;  Yan, JC;  Zhang, Y;  Wang, JX;  Zeng, JP;  Geng, C;  Cong, PP;  Sun, LL;  Wei, TB;  Zhao, LX;  Yan, QF;  He, CG;  Qin, ZX;  Li, JM
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AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 395, 页码: 9-13
Authors:  Dong, P;  Yan, JC;  Zhang, Y;  Wang, JX;  Zeng, JP;  Geng, C;  Cong, PP;  Sun, LL;  Wei, TB;  Zhao, LX;  Yan, QF;  He, CG;  Qin, ZX;  Li, JM
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Hydride vapor phase epitaxy of high quality {10over-barover-bar} semipolar GaN on m-plane sapphire coated with self-assembled SiO2 nanospheres 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 387, 页码: 101-105
Authors:  Yang, JK;  Wei, TB;  Huo, ZQ;  Hu, Q;  Zhang, YH;  Duan, RF;  Wang, JX
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Interface effect on structural and optical properties of type II InAs/GaSb superlattices 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 407, 页码: 37-41
Authors:  Huang, Jianliang;  Ma, Wenquan;  Wei, Yang;  Zhang, Yanhua;  Cui, Kai;  Shao, Jun
Adobe PDF(463Kb)  |  Favorite  |  View/Download:826/138  |  Submit date:2015/03/16
Hillock formation and suppression on c-plane homoepitaxial GaN Layers grown by metalorganic vapor phase epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2013, 卷号: 371, 页码: 7-10
Authors:  Zhou, Kun;  Liu, Jianping;  Zhang, Shuming;  Li, Zengcheng;  Feng, Meixin;  Li, Deyao;  Zhang, Liqun;  Wang, Feng;  Zhu, Jianjun;  Yang, Hui
Adobe PDF(739Kb)  |  Favorite  |  View/Download:846/289  |  Submit date:2013/08/27
Electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2013, 卷号: 372, 页码: 43-48
Authors:  Su, X. J.;  Xu, K.;  Ren, G. Q.;  Wang, J. F.;  Xu, Y.;  Zeng, X. H.;  Zhang, J. C.;  Cai, D. M.;  Zhou, T. F.;  Liu, Z. H.;  Yang, H.
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Purification of metallurgical silicon through directional solidification in a large cold crucible 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2012, 卷号: 355, 期号: 1, 页码: 145-150
Authors:  Liu T (Liu, Tong);  Dong ZY (Dong, Zhiyuan);  Zhao YW (Zhao, Youwen);  Wang J (Wang, Jun);  Chen T (Chen, Teng);  Xie H (Xie, Hui);  Li J (Li, Jian);  Ni HJ (Ni, Haijiang);  Huo DX (Huo, Dianxin)
Adobe PDF(799Kb)  |  Favorite  |  View/Download:1108/581  |  Submit date:2013/03/27
Effect of growth temperature on surface morphology and structure of InAs/GaSb superlattices grown by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2012, 卷号: 359, 页码: 55-59
Authors:  Li LG (Li, Li-Gong);  Liu SM (Liu, Shu-Man);  Luo S (Luo, Shuai);  Yang T (Yang, Tao);  Wang LJ (Wang, Li-Jun);  Liu JQ (Liu, Jun-Qi);  Liu FQ (Liu, Feng-Qi);  Ye XL (Ye, Xiao-Ling);  Xu B (Xu, Bo);  Wang ZG (Wang, Zhan-Guo)
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Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2012, 卷号: 348, 期号: 1, 页码: 10-14
Authors:  Li, ZW;  Wei, HY;  Xu, XQ;  Zhao, GJ;  Liu, XL;  Yang, SY;  Zhu, QS;  Wang, ZG
Adobe PDF(863Kb)  |  Favorite  |  View/Download:822/268  |  Submit date:2013/03/17
Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2012, 卷号: 348, 期号: 1, 页码: 10-14
Authors:  Li, ZW;  Wei, HY;  Xu, XQ;  Zhao, GJ;  Liu, XL;  Yang, SY;  Zhu, QS;  Wang, ZG
Adobe PDF(863Kb)  |  Favorite  |  View/Download:764/245  |  Submit date:2013/03/17
Large scale purification of metallurgical silicon for solar cell by using electron beam melting 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2012, 卷号: 351, 期号: 1, 页码: 19-22
Authors:  Liu, T;  Dong, ZY;  Zhao, YW;  Wang, J;  Chen, T;  Xie, H;  Li, J;  Ni, HJ;  Huo, DX
Adobe PDF(489Kb)  |  Favorite  |  View/Download:1108/530  |  Submit date:2013/03/17
In situ formation of indium catalysts to synthesize crystalline silicon nanowires on flexible stainless steel substrates by PECVD 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2012, 卷号: 347, 期号: 1, 页码: 7-10
Authors:  Xie, XB;  Zeng, XB;  Yang, P;  Wang, C;  Wang, QM
Adobe PDF(793Kb)  |  Favorite  |  View/Download:711/238  |  Submit date:2013/03/17
Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD) 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2012, 卷号: 348, 期号: 1, 页码: 25-30
Authors:  Zhu, JJ;  Fan, YM;  Zhang, H;  Lu, GJ;  Wang, H;  Zhao, DG;  Jiang, DS;  Liu, ZS;  Zhang, SM;  Chen, GF;  Zhang, BS;  Yang, H
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Surface characterization of AlGaN grown on Si (111) substrates 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 331, 期号: 1, 页码: 29-32
Authors:  Pan X;  Wang XL;  Xiao HL;  Wang CM;  Feng C;  Jiang LJ;  Yin HB;  Chen H;  Pan, X (reprint author), Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China, xpan@semi.ac.cn
Adobe PDF(596Kb)  |  Favorite  |  View/Download:952/157  |  Submit date:2012/01/06
Molecular-beam Epitaxy  Field-effect Transistors  Vapor-phase Epitaxy  Group-iii Nitrides  Inversion Domains  High-temperature  Gan  Si(111)  Aln  Sapphire