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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodiodes (RCE-PD)
会议论文
GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY, 95-96, BERLIN, GERMANY, SEP 21-26, 2003
作者:
Yu JZ
;
Li C
;
Cheng BW
;
Wang QM
;
Yu JZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: jzyu@red.semi.ac.cn
Adobe PDF(459Kb)
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浏览/下载:1123/218
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提交时间:2010/11/15
Dbr (Distributed Bragg Reflector)
Mqw (Multiple Quantum Wells)
Optical Fiber Communication
Photodiode
Rce-pd (Resonant-cavity-enhanced Photodiode)
Responsivity
Sige/si
Soi
Electronic structure and optical property of semiconductor nanocrystallites
会议论文
COMPUTATIONAL MATERIALS SCIENCE, 30 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:
Xia JB
;
Chang K
;
Li SS
;
Xia JB Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China. 电子邮箱地址: xiajb@red.semi.ac.cn
Adobe PDF(223Kb)
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浏览/下载:1089/297
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提交时间:2010/11/15
Semiconductor Cluster
Self-assembled Quantum Dot
Diluted Magnetic Semiconductor
Electronic Structure
Resonant Tunneling
Quantum Dots
Exciton-states
Spheres
The diphasic nc-Si/a-Si : H thin film with improved medium-range order
会议论文
JOURNAL OF NON-CRYSTALLINE SOLIDS, 338, Campos do Jordao, BRAZIL, AUG 25-29, 2003
作者:
Zhang S
;
Liao X
;
Xu Y
;
Martins R
;
Fortunato E
;
Kong G
;
Zhang S Chinese Acad Sci Inst Semicond State Key Lab Surface Phys Beijing 100083 Peoples R China. 电子邮箱地址: sz@uninova.pt
Adobe PDF(484Kb)
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浏览/下载:1309/340
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提交时间:2010/11/15
Amorphous-silicon Films
Scattering
Absorption
Densities
Hydrogen
Study of infrared luminescence from Er-implanted GaN films
会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:
Chen WD
;
Song SF
;
Zhu JJ
;
Wang XL
;
Chen CY
;
Hsu CC
;
Chen WD Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: wdchen@red.semi.ac.cn
Adobe PDF(219Kb)
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浏览/下载:1270/325
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提交时间:2010/11/15
Doping
Metalorganic Chemical Vapor Deposition
Molecular Beam Epitaxy
Gallium Compounds
Semiconducting Gallium Compounds
Erbium
Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells
会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:
Jiang DS
;
Bian LF
;
Liang XG
;
Chang K
;
Sun BQ
;
Johnson S
;
Zhang YH
;
Jiang DS CAS Inst Semicond SKLSM Beijing 100083 Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
Adobe PDF(357Kb)
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浏览/下载:1483/405
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提交时间:2010/11/15
Molecular Beam Epitaxy
Quantum Wells
Gaassb/gaas
Gaas
Lasers
Gain
Defects in GaSb studied by coincidence Doppler broadening measurements
会议论文
POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS, 445-6, Kyoto, JAPAN, SEP 07-12, 2003
作者:
Hu WG
;
Wang Z
;
Dai YQ
;
Wang SJ
;
Zhao YW
;
Hu WG Wuhan Univ Dept Phys Wuhan 430072 Peoples R China. 电子邮箱地址: wangz@whu.edu.cn
Adobe PDF(210Kb)
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浏览/下载:1312/262
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提交时间:2010/10/29
Coincidence Doppler Broadening
Defects
Gasb
Positron Annihilation
Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer
会议论文
MICRON, 35 (6), Wuhan, PEOPLES R CHINA, OCT 17-21, 2003
作者:
Luo XH
;
Wang RM
;
Zhang XP
;
Zhang HZ
;
Yu DP
;
Luo MC
;
Wang RM Peking Univ Electron Microscopy Lab Beijing 100871 Peoples R China. 电子邮箱地址: rmwang@pku.edu.cn
Adobe PDF(419Kb)
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浏览/下载:1386/365
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提交时间:2010/10/29
Transmission Electron Microscopy
Electron Energy Loss Spectroscopy
Molecular Beam Epitaxy
Gallium Nitride
Chemical-vapor-deposition
Epitaxy
Layer
Upconversion emission of a Er3+-doped glass microsphere under 633 nm excitation
会议论文
MICROELECTRONICS JOURNAL, 35 (4), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:
Wang JY
;
Ji GR
;
Jin P
;
Zhao LJ
;
Zhang CZ
;
Wang JY Bewing Univ Technol Coll Appl Sci Beijing 100022 Peoples R China. 电子邮箱地址: wangjiyou@bjut.edu.cn
Adobe PDF(94Kb)
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浏览/下载:1209/244
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提交时间:2010/10/29
Upconversion
Doped-er3++ Glass Microsphere
Morphology-dependent Resonances
Characterization of polymorphous silicon thin film and solar cells
会议论文
ADVANCED MATERIALS FORUM II, 455-456, Caparica, PORTUGAL, APR 14-16, 2003
作者:
Zhang S
;
Xu Y
;
Liao X
;
Martins R
;
Fortunato E
;
Hu Z
;
Kong G
;
Zhang S Chinese Acad Sci Inst Semicond State Key Lab Surface Phys Beijing 100083 Peoples R China. 电子邮箱地址: sz@uninova.pt
Adobe PDF(270Kb)
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浏览/下载:1208/215
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提交时间:2010/10/29
Polymorphous Silicon
Thin Film
Solar Cell
Influence of the rapid thermal annealing on the properties of thin a-Si films
会议论文
ADVANCED MATERIALS FORUM II, 455-456, Caparica, PORTUGAL, APR 14-16, 2003
作者:
Nedev N
;
Beshkov G
;
Fortunato E
;
Georgiev SS
;
Ivanov T
;
Raniero L
;
Zhang SB
;
Martins R
;
Martins R Bulgarian Acad Sci Inst Solid State Phys Tzarigradsko Chaussee 72 BU-1784 Sofia Bulgaria. 电子邮箱地址: rm@uninova.pt
Adobe PDF(242Kb)
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浏览/下载:1098/183
  |  
提交时间:2010/10/29
Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures
会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:
Chen Z
;
Chua SJ
;
Yuan HR
;
Liu XL
;
Lu DC
;
Han PD
;
Wang ZG
;
Chen Z Singapore MIT Alliance AMMNS E4-04-10NUS4 Engn Dr3 Singapore 117576 Singapore. 电子邮箱地址: smacz@nus.edu.sg
Adobe PDF(225Kb)
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浏览/下载:1483/329
  |  
提交时间:2010/10/29
Metalorganic Chemical Vapor Deposition
Semiconducting Iii-v Materials
Doped Al(x)Ga1-xn/gan Heterostructures
Carrier Confinement
Effect Transistors
Photoluminescence
Mobility
Heterojunction
Interface
Hfets
Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy
会议论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 27 (1-3), Batz sur Mer, FRANCE, SEP 29-OCT 02, 2003
作者:
Ye XL
;
Chen YH
;
Xu B
;
Zeng YP
;
Wang ZG
;
Ye XL Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: xlye@red.semi.ac.cn
Adobe PDF(211Kb)
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浏览/下载:1498/258
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提交时间:2010/10/29
Short-period Superlattices
Raman-scattering
Quantum-wells
Growth
Roughness
Segregation
Alas/gaas
Alas
Gaas
Microorganisms linked to Neoproterozoic microspar carbonate sedimentation in the Jilin-Liaoning area
会议论文
ACTA GEOLOGICA SINICA-ENGLISH EDITION, 78 (3), Florence, ITALY, 2004
作者:
Ge M
;
Kuang HW
;
Meng XH
;
Furniss G
;
Ge M Chinese Acad Sci Inst Semicond Basin Xueyuan Rd Beijing 100083 Peoples R China. 电子邮箱地址: geming@cugb.edu.cn
Adobe PDF(439Kb)
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浏览/下载:1010/207
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提交时间:2010/10/29
Molar Tooth Carbonate
Neoproterozoic
Sedimentary Environment
Microorganisms
Origin
Proterozoic Belt Supergroup
Tooth Calcite Structures
Expansion Crack Origin
Purcell Supergroup
Western Montana
Gas Bubble
Annealing ambient controlled deep defect formation in InP
会议论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 27 (1-3), Batz sur Mer, FRANCE, SEP 29-OCT 02, 2003
作者:
Zhao YW
;
Dong ZY
;
Duan ML
;
Sun WR
;
Zeng YP
;
Sun NF
;
Sun TN
;
Zhao YW Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.nc
Adobe PDF(186Kb)
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浏览/下载:1411/301
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提交时间:2010/10/29
Fe-doped Inp
Semiinsulating Inp
Point-defects
Pressure
Wafers
Traps
Tolerance analysis for incident angle of volume phase holographic grating used in optical channel performance monitor
会议论文
PROCEEDINGS OF THE THIRD INTERNATIONAL SYMPOSIUM ON INSTRUMENTATION SCIENCE AND TECHNOLOGY, VOL 3, Xian, PEOPLES R CHINA, AUG 18-22, 2004
作者:
Xin HL
;
Li F
;
Cao P
;
He YJ
;
Chen P
;
Liu YL
;
Xin HL Chinese Acad Sci Inst Semicond Res & Dev Ctr Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(571Kb)
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浏览/下载:1196/196
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提交时间:2010/10/29
Ocpm
Vphg
Incident Angle
Tolerance
Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well
会议论文
APOC 2003:ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS; MATERIALS, ACTIVE DEVICES, AND OPTICAL AMPLIFIERS, PTS 1 AND 2, 5280, Wuhan, PEOPLES R CHINA, NOV 04-06, 2003
作者:
Ying-Qiang X
;
Zhang W
;
Niu ZC
;
Wu RG
;
Wang QM
;
Ying-Qiang X Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(75Kb)
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  |  
浏览/下载:1603/495
  |  
提交时间:2010/10/29
Ganas
Sio2 Encapsulation
Rapid-thermal-annealing
Nitrogen Reorganization
Molecular-beam Epitaxy
Optical-properties
Mu-m
Optical analysis of AlGaInP laser diodes with real refractive index guided self-aligned structure
会议论文
APOC 2003:ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS; MATERIALS, ACTIVE DEVICES, AND OPTICAL AMPLIFIERS, PTS 1 AND 2, 5280, Wuhan, PEOPLES R CHINA, NOV 04-06, 2003
作者:
Xu Y
;
Zhu XP
;
Ye XJ
;
Kang XN
;
Cao Q
;
Guo L
;
Chen LH
;
Xu Y Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(559Kb)
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浏览/下载:1690/645
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提交时间:2010/10/29
Finite-difference Methods
Algainp Laser Diodes
Risa
Operation
Layer
Nm
Design of spectrometer based on volume phase grating for near infrared range
会议论文
PROCEEDINGS OF THE THIRD INTERNATIONAL SYMPOSIUM ON INSTRUMENTATION SCIENCE AND TECHNOLOGY, VOL 3, Xian, PEOPLES R CHINA, AUG 18-22, 2004
作者:
Li F
;
Xin HL
;
Cao P
;
Liu YL
;
Li F Res & Dev Ctr Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(371Kb)
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浏览/下载:1246/297
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提交时间:2010/10/29
Spectrometer
Volume Phase Grating
Optical Design
Resolution
A low power consumption thermo-optic variable optical attenuator based on SOI material
会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:
Fang, Q
;
Li, F
;
Wang, CX
;
Xin, HL
;
Liu, YL
;
Fang, Q, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(138Kb)
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浏览/下载:1076/240
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提交时间:2010/03/29
Hetero-epitaxial growth of ZnO films on silicon by low-pressure metal organic chemical vapor deposition
会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:
Wang, QY
;
Shen, WJ
;
Wang, J
;
Wang, JH
;
Zeng, YP
;
Li, JM
;
Wang, QY, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(175Kb)
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浏览/下载:1222/210
  |  
提交时间:2010/03/29
Ultraviolet-laser Emission
Thin-films
Zinc-oxide
Room-temperature