SEMI OpenIR
(Note: the search results are based on claimed items)

Browse/Search Results:  1-10 of 12 Help

Filters                        
Selected(0)Clear Items/Page:    Sort:
Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method 期刊论文
NANOSCALE RESEARCH LETTERS, 2011, 卷号: 6, 页码: Article no.69
Authors:  Liu JM;  Liu XL;  Li CM;  Wei HY;  Guo Y;  Jiao CM;  Li ZW;  Xu XQ;  Song HP;  Yang SY;  Zhu QS;  Wang ZG;  Yang AL;  Yang TY;  Wang HH;  Liu, JM, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. liujianming@semi.ac.cn;  xlliu@semi.ac.cn
Adobe PDF(4152Kb)  |  Favorite  |  View/Download:1253/335  |  Submit date:2011/07/05
Cathodoluminescence Characterization  Gallium Nitride  Stresses  Layers  Heterostructure  Deposition  Constants  Mechanism  Sapphire  Strain  
Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy 期刊论文
NANOSCALE RESEARCH LETTERS, 2011, 卷号: 6, 页码: Article no.50
Authors:  Shi K;  Li DB;  Song HP;  Guo Y;  Wang J;  Xu XQ;  Liu JM;  Yang AL;  Wei HY;  Zhang B;  Yang SY;  Liu XL;  Zhu QS;  Wang ZG;  Shi, K, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. shikai@semi.ac.cn;  lidb@ciomp.ac.cn;  xlliu@semi.ac.cn
Adobe PDF(343Kb)  |  Favorite  |  View/Download:1820/418  |  Submit date:2011/07/05
Chemical-vapor-deposition  Core-level Photoemission  Sb-doped Sno2  Inn  Growth  Gan  Naxwo3  Alloys  Green  State  
Measurement of wurtzite ZnO/rutile TiO2 heterojunction band offsets by x-ray photoelectron spectroscopy 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2011, 卷号: 103, 期号: 4, 页码: 1099-1103
Authors:  Wang J;  Liu XL;  Yang AL;  Zheng GL;  Yang SY;  Wei HY;  Zhu QS;  Wang ZG;  Liu, XL, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. xlliu@semi.ac.cn;  why@semi.ac.cn
Adobe PDF(659Kb)  |  Favorite  |  View/Download:1439/500  |  Submit date:2011/07/05
Sensitized Solar-cells  Photocatalyzed Transformation  Chloroaromatic Derivatives  Zinc-oxide  Films  Powder  Phenol  
GaN grown with InGaN as a weakly bonded layer 期刊论文
CRYSTENGCOMM, 2011, 卷号: 13, 期号: 5, 页码: 1580-1585
Authors:  Xu XQ;  Guo Y;  Liu XL;  Liu JM;  Song HP;  Zhang BA;  Wang J;  Yang SY;  Wei HY;  Zhu QS;  Wang ZG;  Xu, XQ, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. xxq@semi.ac.cn;  xlliu@semi.ac.cn;  qszhu@semi.ac.cn
Adobe PDF(524Kb)  |  Favorite  |  View/Download:1718/465  |  Submit date:2011/07/05
Chemical-vapor-deposition  Si(001) Substrate  Strain  Epitaxy  
The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 314, 期号: 1, 页码: 39-42
Authors:  Shi K;  Yang AL;  Wang J;  Song HP;  Xu XQ;  Sang L;  Wei HY;  Yang SY;  Liu XL;  Zhu QS;  Wang ZG;  Shi, K, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. shikai@semi.ac.cn;  xlliu@semi.ac.cn
Adobe PDF(602Kb)  |  Favorite  |  View/Download:1452/487  |  Submit date:2011/07/05
Metal Organic Chemical Vapor Deposition  Sapphire  Zinc Compounds  Semiconducting Ii-vi Materials  Vapor-phase Epitaxy  Optical-properties  Zno Nanorods  Raman-scattering  M-plane  Films  Photoluminescence  Deposition  Nanowires  Fields  
A study of indium incorporation in In-rich InGaN grown by MOVPE 期刊论文
APPLIED SURFACE SCIENCE, 2010, 卷号: 256, 期号: 10, 页码: 3352-3356
Authors:  Guo Y;  Liu XL;  Song HP;  Yang AL;  Xu XQ;  Zheng GL;  Wei HY;  Yang SY;  Zhu QS;  Wang ZG;  Guo, Y, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Tingshua E Rd 35,POB 912, Beijing 100083, Peoples R China.E-mail Address: guoyan@semi.ac.cn;  xlliu@semi.ac.cn
Adobe PDF(501Kb)  |  Favorite  |  View/Download:1631/749  |  Submit date:2010/04/22
Movpe  In-rich Ingan  Indium Incorporation  Molecular-beam Epitaxy  Chemical-vapor-deposition  Critical Thickness  Droplet Formation  Phase-separation  Temperature  Films  Heterostructures  Immiscibility  Inxga1-xn  
Photoluminescence spectroscopy and positron annihilation spectroscopy probe of alloying and annealing effects in nonpolar m-plane ZnMgO thin films 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 96, 期号: 15, 页码: Art. No. 151904
Authors:  Yang AL;  Song HP;  Liang DC;  Wei HY;  Liu XL;  Jin P;  Qin XB;  Yang SY;  Zhu QS;  Wang ZG;  Yang, AL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: alyang@semi.ac.cn;  xlliu@semi.ac.cn
Adobe PDF(341Kb)  |  Favorite  |  View/Download:1810/463  |  Submit date:2010/05/04
Alloying  Annealing  Electrical Conductivity  Excitons  Ii-vi Semiconductors  Magnesium Compounds  Mocvd Coatings  Photoluminescence  Positron Annihilation  Semiconductor Thin Films  Vacancies (Crystal)  Wide Band Gap Semiconductors  Zinc Compounds  Semiconductors  Emission  Origin  Diodes  
Effects of annealing treatment on the formation of CO2 in ZnO thin films grown by metal-organic chemical vapor deposition 期刊论文
APPLIED SURFACE SCIENCE, 2010, 卷号: 256, 期号: 8, 页码: 2606-2610
Authors:  Zheng GL;  Yang AL;  Wei HY;  Liu XL;  Song HP;  Guo;  Y;  Jia CH;  Jiao CM;  Yang SY;  Zhu QS;  Wang ZG;  Zheng, GL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail Address: zhenggl@semi.ac.cn;  xlliu@semi.ac.cn
Adobe PDF(689Kb)  |  Favorite  |  View/Download:1431/593  |  Submit date:2010/04/04
Zno  Metal-organic Chemical Vapor Deposition  Infrared Absorption  Surface  Ray Photoelectron-spectroscopy  Polar-surface  Epitaxy  
MOCVD生长温度对氧化锌薄膜结构及发光性能的影响 期刊论文
人工晶体学报, 2010, 卷号: 39, 期号: 1, 页码: 34-38,43
Authors:  王振华;  杨安丽;  刘祥林;  魏鸿源;  焦春美;  朱勤生;  杨少延;  王占国
Adobe PDF(733Kb)  |  Favorite  |  View/Download:1092/259  |  Submit date:2011/08/16
利用非极性ZnO缓冲层生长非极性InN薄膜的方法 专利
专利类型: 发明, 专利号: CN201010157517.3, 公开日期: 2011-08-31
Inventors:  郑高林;  杨安丽;  宋华平;  郭严;  魏鸿源;  刘祥林;  朱勤生;  杨少延;  王占国
Adobe PDF(1109Kb)  |  Favorite  |  View/Download:881/206  |  Submit date:2011/08/31