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NiO removal of Ni/Au Ohmic contact to p-GaN after annealing 期刊论文
半导体学报, 2009, 卷号: 30, 期号: 2, 页码: 101-104
Authors:  Lin Mengzhe;  Cao Qing;  Yan Tingjing;  Zhang Shuming;  Chen Lianghui
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模拟分析具有表面等离子体效应的纳米光学天线及其阵列 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 12, 页码: 2340-2345
Authors:  郭宝山;  宋国锋;  陈良惠
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Gain Switch of an AlGaInP Red Light Semiconductor Laser Diode 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 7, 页码: 1274-1277
Authors:  Liu Yuntao;  Song Guofeng;  Chen Lianghui
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纳米孔径垂直腔面发射激光器的制备及特性 期刊论文
半导体学报, 2007, 卷号: 28, 期号: 2, 页码: 265-268
Authors:  高建霞;  宋国峰;  甘巧强;  徐云;  郭宝山;  陈良惠
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键合方法制备长波长面发射的实验和分析 期刊论文
半导体学报, 2007, 卷号: 28, 期号: 3, 页码: 444-447
Authors:  何国荣;  郑婉华;  渠红伟;  杨国华;  王青;  吴旭明;  曹玉莲;  陈良惠
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高密度排列大功率垂直腔面发射激光器列阵 期刊论文
半导体学报, 2007, 卷号: 28, 期号: 11, 页码: 1803-1806
Authors:  王青;  曹玉莲;  何国荣;  韦欣;  渠红伟;  宋国峰;  马文全;  陈良惠
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n-GaAs和p-GaN晶片的直接键合 期刊论文
半导体学报, 2007, 卷号: 28, 期号: 11, 页码: 1815-1817
Authors:  李慧;  何国荣;  渠红伟;  石岩;  种明;  曹玉莲;  陈良惠
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Temperature Distribution in Ridge Structure InGaN Laser Diodes and Its Influence on Device Characteristics 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 3, 页码: 499-505
Authors:  Li Deyao;  Huang Yongzhen;  Zhang Shuming;  Zhong Ming;  Ye Xiaojun;  Zhu Jianjun;  Zhao Degang;  Chen Lianghui;  Yang Hui;  Liang Junwu
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High-Power Distributed Feedback Laser Diodes Emitting at 820nm 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 6, 页码: 966-969
Authors:  Fu Shenghui;  Song Guofeng;  Zhong Yuan;  Chen Lianghui
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Analysis of Si/GaAs Bonding Stresses with the Finite Element Method 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 11, 页码: 1906-1910
Authors:  He Guorong;  Yang Guohua;  Zheng Wanhua;  Wu Xuming;  Wang Xiaodong;  Cao Yulian;  Wang Qing;  Chen Lianghui
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