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Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy 期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 94, 期号: 16, 页码: Art. No. 163301
Authors:  Yang AL;  Song HP;  Wei HY;  Liu XL;  Wang J;  Lv XQ;  Jin P;  Yang SY;  Zhu QS;  Wang ZG;  Yang AL Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: alyang@semi.ac.cn;  xlliu@semi.ac.cn
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Conduction Bands  Iii-v Semiconductors  Ii-vi Semiconductors  Indium Compounds  Interface States  Polarisation  Semiconductor Heterojunctions  Valence Bands  Wide Band Gap Semiconductors  X-ray Photoelectron Spectra  Zinc Compounds  
Temperature Insensitivity of Optical Properties of InAs/GaAs Quantum Dots due to a Pregrown InGaAs Quantum Well 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 1, 页码: Art. No. 017802
Authors:  Liang ZM;  Jin C;  Jin P;  Wu J;  Wang ZG;  Liang ZM Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: lzhm4321@red.semi.ac.cn
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Excitation Dependence  Line-shape  Photoluminescence  Deposition  Heterostructures  Epitaxy