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Effect of the growth mode on the two- to three-dimensional transition of InAs grown on vicinal GaAs(001) substrates 期刊论文
NANOTECHNOLOGY, 2007, 卷号: 18, 期号: 26, 页码: Art.No.265304
Authors:  Wu J;  Jiao YH;  Jin P;  Lv XJ;  Wang ZG;  Wu, J, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wuju@red.semi.ac.cn
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Assembled Quantum Dots  
Evolution of the amount of InAs in wetting layers in an InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy 期刊论文
NANOTECHNOLOGY, 2006, 卷号: 17, 期号: 9, 页码: 2207-2211
Authors:  Chen YH;  Jin P;  Liang LY;  Ye XL;  Wang ZG;  Martinez AI;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: yhchen@red.semi.ac.cn
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Scanning-tunneling-microscopy  Anisotropy Spectroscopy  Growth  Gaas  Surfaces  Alas  
Cleaved-edge overgrowth of aligned InAs islands on GaAs(110) 期刊论文
NANOTECHNOLOGY, 2005, 卷号: 16, 期号: 11, 页码: 2661-2664
Authors:  Cui CX;  Chen YH;  Zhao C;  Jin P;  Shi GX;  Wang YL;  Xu B;  Wang ZG;  Cui, CX, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
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Quantum Dots  
Site controlling of InAs quantum wires on cleaved edges of AlGaAs/GaAs superlattices 期刊论文
NANOTECHNOLOGY, 2005, 卷号: 16, 期号: 8, 页码: 1379-1382
Authors:  Zhang CL;  Wang ZG;  Chen YH;  Cui CX;  Xu B;  Jin P;  Li RY;  Zhang, CL, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
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Diffusion Length  
Interband and intraband photocurrent of self-assembled InAs/InAlAs/InP nanostructures 期刊论文
NANOTECHNOLOGY, 2005, 卷号: 16, 期号: 12, 页码: 2785-2789
Authors:  Lei W;  Chen YH;  Xu B;  Jin P;  Zhao C;  Yu LK;  Wang ZG;  Lei, W, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: ahleiwen@red.semi.ac.cn
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Dot Infrared Photodetectors  Inas/gaas Quantum Dots  Room-temperature  Spectroscopy  Photoconductivity  Heterostructures  Transitions  Lasers  Wells  Inp  
Growth of low-density InAs/GaAs quantum dots on a substrate with an intentional temperature gradient by molecular beam epitaxy 期刊论文
NANOTECHNOLOGY, 2005, 卷号: 16, 期号: 12, 页码: 2775-2778
Authors:  Jin P;  Ye XL;  Wang ZG;  Jin, P, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: penjin@red.semi.ac.cn
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Gaas