SEMI OpenIR
(Note: the search results are based on claimed items)

Browse/Search Results:  1-10 of 11 Help

Filters            
Selected(0)Clear Items/Page:    Sort:
The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 7, 页码: Article no.71914
Authors:  Zhou GY;  Chen YH;  Yu JL;  Zhou XL;  Ye XL;  Jin P;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. yhchen@semi.ac.cn
Adobe PDF(333Kb)  |  Favorite  |  View/Download:1152/357  |  Submit date:2011/07/05
Spectroscopy  
Photoluminescence spectroscopy and positron annihilation spectroscopy probe of alloying and annealing effects in nonpolar m-plane ZnMgO thin films 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 96, 期号: 15, 页码: Art. No. 151904
Authors:  Yang AL;  Song HP;  Liang DC;  Wei HY;  Liu XL;  Jin P;  Qin XB;  Yang SY;  Zhu QS;  Wang ZG;  Yang, AL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: alyang@semi.ac.cn;  xlliu@semi.ac.cn
Adobe PDF(341Kb)  |  Favorite  |  View/Download:1811/463  |  Submit date:2010/05/04
Alloying  Annealing  Electrical Conductivity  Excitons  Ii-vi Semiconductors  Magnesium Compounds  Mocvd Coatings  Photoluminescence  Positron Annihilation  Semiconductor Thin Films  Vacancies (Crystal)  Wide Band Gap Semiconductors  Zinc Compounds  Semiconductors  Emission  Origin  Diodes  
Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy 期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 94, 期号: 16, 页码: Art. No. 163301
Authors:  Yang AL;  Song HP;  Wei HY;  Liu XL;  Wang J;  Lv XQ;  Jin P;  Yang SY;  Zhu QS;  Wang ZG;  Yang AL Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: alyang@semi.ac.cn;  xlliu@semi.ac.cn
Adobe PDF(278Kb)  |  Favorite  |  View/Download:1284/529  |  Submit date:2010/03/08
Conduction Bands  Iii-v Semiconductors  Ii-vi Semiconductors  Indium Compounds  Interface States  Polarisation  Semiconductor Heterojunctions  Valence Bands  Wide Band Gap Semiconductors  X-ray Photoelectron Spectra  Zinc Compounds  
Evolution of InAs nanostructures grown by droplet epitaxy 期刊论文
APPLIED PHYSICS LETTERS, 2007, 卷号: 91, 期号: 3, 页码: Art.No.033112
Authors:  Zhao C;  Chen YH;  Xu B;  Jin P;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, PO Box 912, Beijing 100083, Peoples R China. 电子邮箱地址: yhchen@red.semi.ac.cn
Adobe PDF(278Kb)  |  Favorite  |  View/Download:1037/379  |  Submit date:2010/03/29
Quantum Dots  
Effect of substrate misorientation on the InAs/InAlAs/InP nanostructure morphology and lateral composition modulation in the InAlAs matrix 期刊论文
APPLIED PHYSICS LETTERS, 2007, 卷号: 90, 期号: 10, 页码: Art.No.103118
Authors:  Lei W;  Wang YL;  Chen YH;  Jin P;  Ye XL;  Xu B;  Wang ZG;  Lei, W, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wen.lei@uni-due.de
Adobe PDF(354Kb)  |  Favorite  |  View/Download:978/241  |  Submit date:2010/03/29
Inas Quantum Dots  
Defects around self-organized InAs quantum dots measured by slow positron beam 期刊论文
APPLIED PHYSICS LETTERS, 2007, 卷号: 91, 期号: 9, 页码: Art.No.093510
Authors:  Meng XQ;  Chen ZQ;  Jin P;  Wang ZG;  Wei L;  Meng, XQ, Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China. 电子邮箱地址: mengxq@whu.edu.cn
Adobe PDF(228Kb)  |  Favorite  |  View/Download:963/276  |  Submit date:2010/03/29
High-power  
Shape and spatial correlation control of InAs-InAlAs-InP(001) nanostructure superlattices 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 6, 页码: Art.No.063114
Authors:  Lei W;  Chen YH;  Jin P;  Ye XL;  Wang YL;  Xu B;  Wang ZG;  Lei, W, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: yhchen@red.semi.ac.cn
Adobe PDF(271Kb)  |  Favorite  |  View/Download:938/271  |  Submit date:2010/04/11
Vertical Self-organization  Quantum Wires  Surface  Growth  Alloy  Inalas/inp(001)  Nanowires  Inp(001)  Islands  Arrays  
High uniformity of self-organized InAs quantum wires on InAlAs buffers grown on misoriented InP(001) 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 12, 页码: Art.No.123104
Authors:  Wang YL;  Jin P;  Ye XL;  Zhang CL;  Shi GX;  Li RY;  Chen YH;  Wang ZG;  Wang, YL, Beijing Tongmei Xtal Technol Co Ltd, Dept Res & Dev, Beijing Tongzhou Ind Dev Zone, Beijing 101113, Peoples R China. E-mail: wangyli@red.semi.ac.cn
Adobe PDF(166Kb)  |  Favorite  |  View/Download:1043/332  |  Submit date:2010/04/11
Nanowires  Threshold  Wells  Inp  
Evolution of wetting layer of InAs/GaAs quantum dots studied by reflectance difference spectroscopy 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 7, 页码: Art.No.071903
Authors:  Chen YH;  Sun J;  Jin P;  Wang ZG;  Yang Z;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: yhchen@red.semi.ac.cn
Adobe PDF(164Kb)  |  Favorite  |  View/Download:962/330  |  Submit date:2010/04/11
Growth  Inas  Gaas  Surfaces  
Observation of intershell and hybridized energy states in InAs/GaAs quantum dots 期刊论文
APPLIED PHYSICS LETTERS, 2005, 卷号: 87, 期号: 9, 页码: Art.No.093104
Authors:  Wang FZ;  Chen ZH;  Bai LH;  Huang SH;  Xiong H;  Shen SC;  Sun J;  Jin P;  Wang ZG;  Wang, FZ, Fudan Univ, Dept Phys, Surface Phys Lab, Shanghai 200433, Peoples R China. 电子邮箱地址: zhanghai@fudan.edu.cn
Adobe PDF(96Kb)  |  Favorite  |  View/Download:1181/287  |  Submit date:2010/03/17
Optical-properties