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Distinct two dimensional lateral ordering of self-assembled quantum dots 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2008, 卷号: 40, 期号: 6, 页码: 1952-1954
Authors:  Ma WQ;  Sun YW;  Yang XJ;  Jiang DS;  Chen LH;  Ma, WQ, Chinese Acad Sci, Inst Semicond, Lab NanoOptoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wqma@semi.ac.cn
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Lateral Ordering  
Cathodoluminescence study of GaN-based film structures 期刊论文
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2008, 卷号: 19, 页码: S58-S63 Suppl. 1
Authors:  Jiang DS;  Jahn U;  Chen J;  Li DY;  Zhang SM;  Zhu JJ;  Zhao DG;  Liu ZS;  Yang H;  Ploog K;  Jiang, DS, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn
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Al composition variations in AlGaN films grown on low-temperature GaN buffer layer by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2008, 卷号: 310, 期号: 24, 页码: 5266-5269
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Liu ZS;  Zhang SM;  Yang H;  Jahn U;  Ploog KH;  Zhao DG Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn
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Cathodoluminescence  Mocvd  Algan  
Defect Cluster-Induced X-Ray Diffuse Scattering in GaN Films Grown by MOCVD 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 7, 页码: 1242-1245
Authors:  Ma Zhifang;  Wang Yutian;  Jiang Desheng;  Zhao Degang;  Zhang Shuming;  Zhu Jianjun;  Liu Zongshun;  Sun Baojuan;  Duan Ruifei;  Yang Hui;  Liang Junwu
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Continuous-wave operation of GaN based multi-quantum-well laser diode at room temperature 期刊论文
CHINESE PHYSICS LETTERS, 2008, 卷号: 25, 期号: 4, 页码: 1281-1283
Authors:  Zhang LQ;  Zhang SM;  Yang H;  Cao Q;  Ji L;  Zhu JJ;  Liu ZS;  Zhao DG;  Jiang DS;  Duan LH;  Wang H;  Shi YS;  Liu SY;  Chen LH;  Liang JW;  Zhang, LQ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: hyang@red.semi.ac.cn
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MOCVD growth of InN using a GaN buffer 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2008, 卷号: 43, 期号: 2, 页码: 81-85
Authors:  Wang LL;  Wang H;  Chen J;  Sun X;  Zhu JJ;  Jiang DS;  Yang H;  Liang JW;  Wang, LL, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wangll@red.semi.ac.cn
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Surface  
Effect of annealing on photoluminescence properties of neon implanted GaN 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 卷号: 41, 期号: 2, 页码: Art. No. 025107
Authors:  Majid A;  Ali A;  Zhu JJ;  Wang YT;  Liu W;  Lu GJ;  Liu WB;  Zhang LQ;  Liu ZS;  Zhao DG;  Zhang SM;  Jiang DS;  Yang H;  Ali, A, Quaid I Azam Univ, Dept Phys, Adv Mat Phys Lab, Islamabad, Pakistan. 电子邮箱地址: akbar@qau.edu.pk
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Luminescence  
Structural properties of ne implanted GaN 期刊论文
PHYSICA SCRIPTA, 2008, 卷号: 77, 期号: 3, 页码: Art. No. 035601
Authors:  Majid A;  Ali A;  Zhu JJ;  Liu W;  Lu GJ;  Zhang LQ;  Liu ZS;  Wang H;  Zhao DG;  Zhang SM;  Jiang DS;  Wang YT;  Yang H;  Israr M;  Majid, A, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: abdulmajid40@yahoo.com
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Raman-scattering