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Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films 期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 95, 期号: 4, 页码: Art. No. 041901
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Liu ZS;  Wang H;  Zhang SM;  Wang YT;  Yang H;  Zhao DG Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China. E-mail Address: dgzhao@red.semi.ac.cn
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Edge Dislocations  Gallium Compounds  Iii-v Semiconductors  Impurities  Photoluminescence  Semiconductor Doping  Semiconductor Thin Films  Silicon  Wide Band Gap Semiconductors  X-ray Diffraction  
Electron spin relaxation by nuclei and holes in single InAs quantum dots 期刊论文
APPLIED PHYSICS LETTERS, 2009, 卷号: 95, 期号: 22, 页码: Art.No.221903
Authors:  Dou XM;  Chang XY;  Sun BQ;  Xiong YH;  Niu ZC;  Ni HQ;  Jiang DS;  Dou, XM, Chinese Acad Sci, Inst Semicond, SKLSM, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: bqsun@semi.ac.cn
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Electron Spin Polarisation  
Influence of defects in n(-)-GaN layer on the responsivity of Schottky barrier ultraviolet photodetectors 期刊论文
APPLIED PHYSICS LETTERS, 2007, 卷号: 90, 期号: 6, 页码: Art.No.062106
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Liu ZS;  Zhang SM;  Liang JW;  Yang H;  Li X;  Li XY;  Gong HM;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: dgzhao@red.semi.ac.cn
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Chemical-vapor-deposition  
Role of edge dislocations in enhancing the yellow luminescence of n-type GaN 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 24, 页码: Art.No.241917
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Liu ZS;  Zhang SM;  Liang JW;  Li X;  Li XY;  Gong HM;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: dgzhao@red.semi.ac.cn
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Chemical-vapor-deposition  Molecular-beam Epitaxy  X-ray-diffraction  Mg-doped Gan  Undoped Gan  Photoluminescence Bands  Threading Dislocations  Positron-annihilation  Growth Stoichiometry  Gallium Nitride  
Influence of dislocations on photoluminescence of InGaN/GaN multiple quantum wells 期刊论文
APPLIED PHYSICS LETTERS, 2005, 卷号: 87, 期号: 7, 页码: Art.No.071908
Authors:  Zhang JC;  Jiang DS;  Sun Q;  Wang JF;  Wang YT;  Liu JP;  Chen J;  Jin RQ;  Zhu JJ;  Yang H;  Dai T;  Jia QJ;  Zhang, JC, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: jczhang@red.semi.ac.cn
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X-ray-diffraction  
Lateral phase separation in AlGaN grown on GaN with a high-temperature AIN interlayer 期刊论文
APPLIED PHYSICS LETTERS, 2005, 卷号: 87, 期号: 12, 页码: Art.No.121914
Authors:  Sun Q;  Huang Y;  Wang H;  Chen J;  Jin RQ;  Zhang SM;  Yang H;  Jiang DS;  Jahn U;  Ploog KH;  Sun, Q, Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: qsun@red.semi.ac.cn
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Chemical-vapor-deposition  
Nonradiative recombination centers in Ga(As,N) and their annealing behavior studied by Raman spectroscopy 期刊论文
APPLIED PHYSICS LETTERS, 2004, 卷号: 84, 期号: 11, 页码: 1859-1861
Authors:  Ramsteiner M;  Jiang DS;  Harris JS;  Ploog KH;  Ramsteiner, M, Paul Drude Inst Festkorperelekt, Hausvogteipl 5-7, D-10117 Berlin, Germany. 电子邮箱地址: mer@pdi-berlin.de
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1.3 Mu-m  
Investigations on V-defects in quaternary AlInGaN epilayers 期刊论文
APPLIED PHYSICS LETTERS, 2004, 卷号: 84, 期号: 26, 页码: 5449-5451
Authors:  Liu JP;  Wang YT;  Yang H;  Jiang DS;  Jahn U;  Ploog KH;  Liu, JP, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: jpliu@red.semi.ac.cn
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Multiple-quantum Wells  
Structural and optical properties of strain-compensated GaAsSb/GaAs quantum wells with high Sb composition 期刊论文
APPLIED PHYSICS LETTERS, 2003, 卷号: 83, 期号: 20, 页码: 4149-4151
Authors:  Zheng XH;  Jiang DS;  Johnson S;  Zhang YH;  Zheng XH,Chinese Acad Sci,Inst Phys,POB 603,Beijing 100080,Peoples R China.
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1.3-mu-m Vcsels  Gaas  Superlattices  
Conduction band offset and electron effective mass in GaInNAs/GaAs quantum-well structures with low nitrogen concentration 期刊论文
APPLIED PHYSICS LETTERS, 2001, 卷号: 78, 期号: 15, 页码: 2217-2219
Authors:  Pan Z;  Li LH;  Lin YW;  Sun BQ;  Jiang DS;  Ge WK;  Pan Z,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
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Molecular-beam Epitaxy  Ingaasn  Laser  Operation  Alloys  Growth  Gaas