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Evolution of wetting layers in InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
Authors:  Chen YH;  Tang CH;  Xu B;  Jin P;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
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Inas  
Lateral intersubband photocurrent study on InAs/InAlas/InP self-assembled nanostructures 会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
Authors:  Lei W;  Chen YH;  Jin P;  Xu B;  Ye XL;  Wang ZG;  Huang XQ;  Lei, W, Acad Sinica, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
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Lateral Intersubband Photocurrent  
Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots 会议论文
JOURNAL OF LUMINESCENCE, Shanghai, PEOPLES R CHINA, AUG 01-05, 2005
Authors:  Wang FZ;  Chen ZH;  Sun J;  Bai LH;  Huang SH;  Xiong H;  Jin P;  Wang ZG;  Shen SC;  Chen, ZH, Fudan Univ, Dept Phys, Surface Phys Lab, Shanghai 200433, Peoples R China. 电子邮箱地址: zhanghai@fudan.edu.cn
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Quantum Dots  
Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices 会议论文
SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
Authors:  Xu B;  Wang ZG;  Chen YH;  Jin P;  Ye XL;  Liu HY;  Zhang ZY;  Shi GX;  Zhang CL;  Wang YL;  Liu FQ;  Xu, B, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
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Dots  
Upconversion emission of a Er3+-doped glass microsphere under 633 nm excitation 会议论文
MICROELECTRONICS JOURNAL, 35 (4), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
Authors:  Wang JY;  Ji GR;  Jin P;  Zhao LJ;  Zhang CZ;  Wang JY Bewing Univ Technol Coll Appl Sci Beijing 100022 Peoples R China. 电子邮箱地址: wangjiyou@bjut.edu.cn
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Upconversion  Doped-er3++ Glass Microsphere  Morphology-dependent Resonances  
Effect of noncoherent islands on the optical properties of the 1.3 mu m InAs/GaAs quantum dots during rapid thermal annealing 会议论文
SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
Authors:  Shi GX;  Xu B;  Ye XL;  Jin P;  Chen YH;  Wang YL;  Cui CX;  Wang ZG;  Shi, GX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
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1.3 Mu-m  
Molecular-beam epitaxial growth of position controlled InAs islands on cleaved edge of InGaAs/GaAs superlattice 会议论文
SMIC-XIII 2004 13th International Conference on Semiconducting & Insulating Materials, Beijing, PEOPLES R CHINA, SEP 20-25, 2004
Authors:  Cui CX;  Chen YH;  Zhang CL;  Jin P;  Xu B;  Shi GX;  Zhao C;  Wang ZG;  Cui, CX, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
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Quantum Dots  
Influence of In0.2Ga0.8As strain-reducing layer on the active region of quantum dot superluminescent diodes 会议论文
QUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES, 737, BOSTON, MA, DEC 02, 2001-DEC 05, 2002
Authors:  Zhang ZY;  Li CM;  Jin P;  Meng XQ;  Xu B;  Ye XL;  Wang ZG;  Zhang ZY Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China.
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Spectrum