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Single wall carbon nanotube absorber with polarization absorption grown by vertical evaporation method 期刊论文
LASER PHYSICS, 2011, 卷号: 21, 期号: 1, 页码: 148-152
Authors:  Wang YG;  Ma XY;  Wang, YG, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. chinawygxjw@hotmail.com
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Passive-mode-locking  Pumped Nd-gdvo4 Laser  Saturable Absorber  Fiber Laser  Ultrafast Lasers  Mirror  
Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 314, 期号: 1, 页码: 141-145
Authors:  Wei TB;  Yang JK;  Hu Q;  Duan RF;  Huo ZQ;  Wang JX;  Zeng YP;  Wang GH;  Li JM;  Wei, TB, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China. tbwei@semi.ac.cn
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Cl  Pl  Stacking Fault  Hvpe  Gan  Nonpolar  Chemical-vapor-deposition  Acceptor Pair Emission  Phase Epitaxy  Grown Gan  Semiconductors  Sapphire  Films  Nitride  
Enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes by hydrogen plasma treatment 期刊论文
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2011, 卷号: 5, 期号: 2, 页码: 74-76
Authors:  Zhang SG;  Zhang XW;  Wang JX;  You JB;  Yin ZG;  Dong JJ;  Cui B;  Wowchak AM;  Dabiran AM;  Chow PP;  Zhang, XW, CAS, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. xwzhang@semi.ac.cn
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Zno  Led  Electroluminescence  Hydrogen-plasma Treatment  
The impact of annealing temperature on the structural and magnetization properties of Sm implanted GaN films 期刊论文
MATERIALS LETTERS, 2011, 卷号: 65, 期号: 4, 页码: 667-669
Authors:  Sun LL;  Liu C;  Li JM;  Wang JX;  Yan FW;  Zeng YP;  Sun, LL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. lilisun@semi.ac.cn
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Diluted Magnetic Semiconductors (Dmss)  Ion implantatIon  Room-temperature Ferromagnetic Properties  Room-temperature  
Electrical and magnetic properties of Ga(1-x)Gd(x)N grown by metal organic chemical vapor deposition 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 110, 期号: 8, 页码: 83920
Authors:  Gupta, S;  Zaidi, T;  Melton, A;  Malguth, E;  Yu, HB;  Liu, ZQ;  Liu, XT;  Schwartz, J;  Ferguson, IT;  Ferguson, IT (reprint author), Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA,ianf@uncc.edu
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Ferromagnetic Properties  Semiconductors  Gan  Gagdn  
Backward pumping kilowatt Yb(3+)-doped double-clad fiber laser 期刊论文
LASER PHYSICS, 2011, 卷号: 21, 期号: 9, 页码: 1621-1624
Authors:  Han ZH;  Lin XC;  Hou W;  Yu HJ;  Zhou SZ;  Li JM;  Han, ZH (reprint author), Chinese Acad Sci, Inst Semicond, A35 QingHua E Rd, Beijing 100083, Peoples R China, zhhan@semi.ac.cn
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Output Power  
Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy 期刊论文
Materials Science in Semiconductor Processing, 2011
Authors:  Hu, Qiang;  Wei, Tongbo;  Duan, Ruifei;  Yang, Jiankun;  Huo, Ziqiang;  Zeng, Yiping;  Xu, Shu;  Hu, Q.(huqiang@semi.ac.cn)
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Carrier Concentration  Etching  Gallium Alloys  Optical Properties  Point Defects  Raman Spectroscopy  Semiconducting Gallium Compounds  Vapor Phase Epitaxy  Vapors  
Electrical characteristics of a vertical light emitting diode with N-type contacts on a selectively wet-etching roughened surface 期刊论文
Journal of Semiconductors, 2011, 卷号: 32, 期号: 2, 页码: 24009
Authors:  Wang, Liancheng;  Guo, Enqing;  Liu, Zhiqiang;  Yi, Xiaoyan;  Wang, Guohong;  Wang, L.(wanglc@semi.ac.cn)
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Gallium Nitride  Leakage Currents  Light Emission  Light Emitting Diodes  Metallizing  Polarization  Testing  Water Analysis  
Fabrication, morphology and mechanical properties of Al2O3-Al graded coatings on China low activation martensitic steel substrates 期刊论文
Surface and Interface Analysis, 2011
Authors:  Song, Binbin;  Wu, Ping;  Chen, Sen;  Zhang, Shiping;  Yan, Dan;  Xue, Lian;  Wu, P.(pingwu@sas.ustb.edu.cn)
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Adhesion  Auger Electron Spectroscopy  Fabrication  Hardness  Magnetron Sputtering  Martensitic Steel  Morphology  Nanoindentation  Protective Coatings  Scanning Electron Microscopy  Silicon Wafers  x Ray Photoelectron Spectroscopy  
Molecular beam epitaxy growth of GaAs on an offcut Ge substrate 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 1, 页码: Article no.18102
Authors:  He JF;  Niu ZC;  Chang XY;  Ni HQ;  Zhu Y;  Li MF;  Shang XJ;  Niu, ZC, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China. zcniu@semi.ac.cn
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Molecular Beam Epitaxy  Anti-phase Domain  Gaas/ge Interface  Chemical Vapor-deposition  Junction Solar-cells  Domain-free Growth  Temperature  Quality  Future