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在解理面上制作半导体纳米结构的方法 专利
专利类型: 发明, 申请日期: 2006-01-25, 公开日期: 2009-06-04, 2009-06-11
Inventors:  陈涌海;  张春玲;  崔草香;  徐波;  金鹏;  刘峰奇;  王占国
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Study of nucleation positions of InAs islands on stripe-patterned GaAs(100) substrate 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 卷号: 31, 期号: 1, 页码: 43-47
Authors:  Cui CX;  Chen YH;  Jin P;  Xu B;  Ren YY;  Zhao C;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: yhchen@red.semi.ac.cn
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Patterned Substrate  Gaas  Molecular Beam Epitaxy  Nucleation Positions  Assembled Quantum Dots  Molecular-beam Epitaxy  Ge Islands  Growth  Surface  Arrays  
Lateral intersubband photocurrent study on InAs/InAlas/InP self-assembled nanostructures 会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
Authors:  Lei W;  Chen YH;  Jin P;  Xu B;  Ye XL;  Wang ZG;  Huang XQ;  Lei, W, Acad Sinica, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
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Lateral Intersubband Photocurrent  
Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer 期刊论文
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2006, 卷号: 153, 期号: 7, 页码: G703-G706
Authors:  Sun J;  Jin P;  Zhao C;  Yu LK;  Ye XL;  Xu B;  Chen YH;  Wang ZG;  Sun, J, Lund Univ, SE-22100 Lund, Sweden. E-mail: albertjefferson@sohu.com
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Gaas  Spectroscopy  Parameters  Transport  Lasers  Energy  States  Hole  
Selective growth of InAs islands on patterned GaAs (100) substrate 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2006, 卷号: 39, 期号: 5, 页码: 446-453
Authors:  Cui CX;  Chen YH;  Ren YY;  Xu B;  Jin P;  Zhao C;  Wang ZG;  Cui, CX, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: cxcui@red.semi.ac.cn
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Patterned Substrate  Molecular Beam Epitaxy  Quantum Dots  Inas  Gaas  Ingaas  Assembled Quantum Dots  Molecular-beam Epitaxy  Fabrication  
Evolution of the amount of InAs in wetting layers in an InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy 期刊论文
NANOTECHNOLOGY, 2006, 卷号: 17, 期号: 9, 页码: 2207-2211
Authors:  Chen YH;  Jin P;  Liang LY;  Ye XL;  Wang ZG;  Martinez AI;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: yhchen@red.semi.ac.cn
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Scanning-tunneling-microscopy  Anisotropy Spectroscopy  Growth  Gaas  Surfaces  Alas  
Temperature dependence of surface quantum dots grown under frequent growth interruption 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 卷号: 33, 期号: 1, 页码: 207-210
Authors:  Yu LK;  Xu B;  Wang ZG;  Chen YH;  Jin P;  Zhao C;  Sun J;  Ding F;  Hu LJ;  Yu, LK, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: yulike@red.semi.ac.cn
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Growth Interruption  In Segregation  Surface Oxide  Molecular Beam Epitaxy  Quantum Dots  Molecular-beam Epitaxy  Gaas  Photoluminescence  Layer  Shape  Size  
A complex Fourier transformation study of the contactless electroreflectance of an undoped-n(+) GaAs structure 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 卷号: 21, 期号: 6, 页码: 786-789
Authors:  Jin P;  Pan SH;  Li YG;  Zhang CZ;  Wang ZG;  Jin, P, Nankai Univ, Dept Phys, Tianjin 300071, Peoples R China. E-mail: pengjin@red.semi.ac.cn
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Delta-doped Gaas  Franz-keldysh Oscillations  Built-in Field  Fermi-level  Photoreflectance  Surface  Spectroscopy  
Shape and spatial correlation control of InAs-InAlAs-InP(001) nanostructure superlattices 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 6, 页码: Art.No.063114
Authors:  Lei W;  Chen YH;  Jin P;  Ye XL;  Wang YL;  Xu B;  Wang ZG;  Lei, W, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: yhchen@red.semi.ac.cn
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Vertical Self-organization  Quantum Wires  Surface  Growth  Alloy  Inalas/inp(001)  Nanowires  Inp(001)  Islands  Arrays  
High uniformity of self-organized InAs quantum wires on InAlAs buffers grown on misoriented InP(001) 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 12, 页码: Art.No.123104
Authors:  Wang YL;  Jin P;  Ye XL;  Zhang CL;  Shi GX;  Li RY;  Chen YH;  Wang ZG;  Wang, YL, Beijing Tongmei Xtal Technol Co Ltd, Dept Res & Dev, Beijing Tongzhou Ind Dev Zone, Beijing 101113, Peoples R China. E-mail: wangyli@red.semi.ac.cn
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Nanowires  Threshold  Wells  Inp