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Surface morphology control of strained InAs/GaAs(331)A films: From nanowires to island-pit pairs 期刊论文
APPLIED PHYSICS LETTERS, 2005, 卷号: 86, 期号: 1, 页码: Art.No.013104
Authors:  Gong Z;  Niu ZC;  Fang ZD;  Miao ZH;  Feng SL;  Niu, ZC, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zcniu@red.semi.ac.cn
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Molecular-beam Epitaxy  
Recombination kinetics of Te isoelectronic centers in ZnSTe 期刊论文
APPLIED PHYSICS LETTERS, 2005, 卷号: 86, 期号: 5, 页码: Art.No.052107
Authors:  Yang XD;  Xu ZY;  Sun Z;  Sun BQ;  Li GH;  Sou IK;  Ge WK;  Yang, XD, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zyxu@red.semi.ac.cn
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Zinc-sulfide  
Demonstration of low-cost Si-based tunable long-wavelength resonant-cavity-enhanced photodetectors 期刊论文
APPLIED PHYSICS LETTERS, 2005, 卷号: 86, 期号: 3, 页码: Art.No.033502
Authors:  Mao RW;  Zuo YH;  Li CB;  Cheng BW;  Teng XG;  Luo LP;  Yu JZ;  Wang QM;  Mao, RW, Chinese Acad Sci, Inst Semicond, State Key Joint Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: maorongwei@red.semi.ac.cn
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Quantum-efficiency  
Comment on 期刊论文
APPLIED PHYSICS LETTERS, 2005, 卷号: 87, 期号: 17, 页码: Art.No.176101
Authors:  Liu B;  Zhang R;  Xie ZL;  Xiu XQ;  Bi ZX;  Gu SL;  Shi Y;  Zheng YD;  Hu LJ;  Chen YH;  Wang ZG;  Zhang, R, Nanjing Univ, Key Lab Adv Photon & Elect Mat, Nanjing 210093, Peoples R China. 电子邮箱地址: rzhang@nju.edu.cn
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High structural and optical quality 1.3 mu m GaInNAs/GaAs quantum wells with higher indium content grown by molecular-beam expitaxy 期刊论文
APPLIED PHYSICS LETTERS, 2005, 卷号: 87, 期号: 16, 页码: Art.No.161911
Authors:  Zhang SY;  Niu ZC;  Ni HQ;  Wu DH;  He ZH;  Sun Z;  Han Q;  Wu RH;  Niu, ZC, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址: zcniu@red.semi.ac.cn
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Improved Luminescence Efficiency  
Comparison of the properties of GaN grown on complex Si-based structures 期刊论文
APPLIED PHYSICS LETTERS, 2005, 卷号: 86, 期号: 8, 页码: Art.No.081912
Authors:  Zhou, SQ;  Vantomme, A;  Zhang, BS;  Yang, H;  Wu, MF;  Vantomme, A, Katholieke Univ Leuven, Inst Voor Kern Stralingsfys, B-3001 Heverlee, Belgium. 电子邮箱地址: andre.vantomme@fys.kuleuven.ac.be
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Chemical-vapor-deposition  
High-quality GaNAs/GaAs quantum wells with light emission up to 1.44 mu m grown by molecular-beam epitaxy 期刊论文
APPLIED PHYSICS LETTERS, 2005, 卷号: 87, 期号: 14, 页码: Art.No.141913
Authors:  Wang SM;  Gu QF;  Wei YQ;  Sadeghi M;  Larsson A;  Zhao QX;  Wang XD;  Ma CH;  Xing ZG;  Wang, SM, Chalmers Univ Technol, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden. 电子邮箱地址: shumin.wang@mc2.chalmers.se
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Gainnas  
1.55 mu m GaInNAs resonant-cavity-enhanced photodetector grown on GaAs 期刊论文
APPLIED PHYSICS LETTERS, 2005, 卷号: 87, 期号: 11, 页码: Art.No.111105
Authors:  Han, Q;  Yang, XH;  Niu, ZC;  Ni, HQ;  Xu, YQ;  Zhang, SY;  Du, Y;  Peng, LH;  Zhao, H;  Tong, CZ;  Wu, RH;  Wang, QM;  Han, Q, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: hanqin@red.semi.ac.cn
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Quantum-well Lasers  
GaAs-based room-temperature continuous-wave 1.59 mu m GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy 期刊论文
APPLIED PHYSICS LETTERS, 2005, 卷号: 87, 期号: 23, 页码: Art.No.231121
Authors:  Niu, ZC;  Zhang, SY;  Ni, HQ;  Wu, DH;  Zhao, H;  Peng, HL;  Xu, YQ;  Li, SY;  He, ZH;  Ren, ZW;  Han, Q;  Yang, XH;  Du, Y;  Wu, RH;  Zhang, SY, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China. 电子邮箱地址: zhangshiyong@tsinghua.org.cn
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Observation of intershell and hybridized energy states in InAs/GaAs quantum dots 期刊论文
APPLIED PHYSICS LETTERS, 2005, 卷号: 87, 期号: 9, 页码: Art.No.093104
Authors:  Wang FZ;  Chen ZH;  Bai LH;  Huang SH;  Xiong H;  Shen SC;  Sun J;  Jin P;  Wang ZG;  Wang, FZ, Fudan Univ, Dept Phys, Surface Phys Lab, Shanghai 200433, Peoples R China. 电子邮箱地址: zhanghai@fudan.edu.cn
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Optical-properties