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Carrier capture by threading dislocations in (In,Ga)N/GaN heteroepitaxial layers 期刊论文
PHYSICAL REVIEW B, 2010, 卷号: 81, 期号: 12, 页码: Art. No. 125314
Authors:  Jahn U;  Brandt O;  Luna E;  Sun X;  Wang H;  Jiang DS;  Bian LF;  Yang;  H;  Jahn, U, Paul Drude Inst Festkorperelekt, Hausvogteipl 5-7, D-10117 Berlin, Germany. 电子邮箱地址:
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Gan  Alloys  
Photon localization and lasing in disordered GaNxAs1-x optical superlattices 期刊论文
PHYSICAL REVIEW B, 2006, 卷号: 73, 期号: 19, 页码: Art.No.195112
Authors:  Sun BQ;  Jiang DS;  Sun, BQ, Chinese Acad Sci, Inst Semicond, SKLSM, POB 911, Beijing 100083, Peoples R China. E-mail:
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Random Laser  Scattering  Media  Light  Absorption  Cavities  Gain  
Anomaly of the current self-oscillation frequency in the sequential tunneling of a doped GaAs/AlAs superlattice 期刊论文
PHYSICAL REVIEW B, 2000, 卷号: 61, 期号: 11, 页码: 7261-7264
Authors:  Wang XR;  Wang JN;  Sun BQ;  Jiang DS;  Wang XR,Hong Kong Univ Sci & Technol,Dept Phys,Clear Water Bay,Hong Kong,Hong Kong,Peoples R China.
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Gaas-alas Superlattices  Electric-field Domains  Multiple Quantum-wells  Semiconductor Superlattices  Room-temperature  Diodes  Model  Instabilities  Transport  
Current self-oscillation induced by a transverse magnetic field in a doped GaAs/AlAs superlattice 期刊论文
PHYSICAL REVIEW B, 1999, 卷号: 60, 期号: 12, 页码: 8866-8870
Authors:  Sun BQ;  Wang JN;  Ge WK;  Wang YQ;  Jiang DS;  Zhu HJ;  Wang HL;  Deng YM;  Feng SL;  Wang JN,Hong Kong Univ Sci & Technol,Dept Phys,Hong Kong,Peoples R China.
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Semiconductor Superlattices  Domains  Model