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Hillock formation and suppression on c-plane homoepitaxial GaN Layers grown by metalorganic vapor phase epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2013, 卷号: 371, 页码: 7-10
Authors:  Zhou, Kun;  Liu, Jianping;  Zhang, Shuming;  Li, Zengcheng;  Feng, Meixin;  Li, Deyao;  Zhang, Liqun;  Wang, Feng;  Zhu, Jianjun;  Yang, Hui
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Electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2013, 卷号: 372, 页码: 43-48
Authors:  Su, X. J.;  Xu, K.;  Ren, G. Q.;  Wang, J. F.;  Xu, Y.;  Zeng, X. H.;  Zhang, J. C.;  Cai, D. M.;  Zhou, T. F.;  Liu, Z. H.;  Yang, H.
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Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD) 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2012, 卷号: 348, 期号: 1, 页码: 25-30
Authors:  Zhu, JJ;  Fan, YM;  Zhang, H;  Lu, GJ;  Wang, H;  Zhao, DG;  Jiang, DS;  Liu, ZS;  Zhang, SM;  Chen, GF;  Zhang, BS;  Yang, H
Adobe PDF(671Kb)  |  Favorite  |  View/Download:1103/369  |  Submit date:2013/02/27
In situ formation of indium catalysts to synthesize crystalline silicon nanowires on flexible stainless steel substrates by PECVD 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2012, 卷号: 347, 期号: 1, 页码: 7-10
Authors:  Xie, XB;  Zeng, XB;  Yang, P;  Wang, C;  Wang, QM
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Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(001) substrates 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 317, 期号: 1, 页码: 43-46
Authors:  Su SJ;  Wang W;  Cheng BW;  Zhang GZ;  Hu WX;  Xue CL;  Zuo YH;  Wang QM;  Cheng, BW, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. cbw@semi.ac.cn
Adobe PDF(736Kb)  |  Favorite  |  View/Download:1670/567  |  Submit date:2011/07/05
Thermal Stability  Molecular Beam Epitaxy  Germanium Tin Alloys  Germanium  Molecular-beam Epitaxy  Low-temperature  Semiconductors  Ge(001)2x1