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Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 318, 期号: 1, 页码: 572-575
Authors:  Zhou HY;  Qu SC;  Jin P;  Xu B;  Ye XL;  Liu JP;  Wang ZG;  Qu, SC, Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. qsc@semi.ac
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Atom Force Microscopy  Nanostructures  Molecular-beam Epitaxy  Nanomaterials  Semiconducting Gallium Arsenide  Quantum-dots  Anodic Alumina  Arrays  Placement  Inas  
Effect of layer thickness of immiscible alloy In0.52Al0.48As on the morphology of InAs nanostructure grown on In0.52Al0.48As/InP(001) 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2005, 卷号: 273, 期号: 3-4, 页码: 494-499
Authors:  Zhao FA;  Chen YH;  Ye XL;  Xu B;  Jin P;  Wu J;  Wang ZG;  Zhang CL;  Zhao, FA, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhaofa@red.semi.ac.cn
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Nanostructures  
The effect of a combined InAlAs and GaAs strained buffer layer on the structure and optical property of InAs quantum dots 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2005, 卷号: 276, 期号: 1-2, 页码: 77-82
Authors:  Shi GX;  Xu B;  Jin P;  Ye XL;  Wang YL;  Wang ZG;  Shi, GX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: gxshi@red.semi.ac.cn
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Optical Properties  
Optical properties of self-assembled InAs/InAlAs/InP quantum wires with different InAs deposited thickness 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2005, 卷号: 286, 期号: 1, 页码: 23-27
Authors:  Lei W;  Chen YH;  Wang YL;  Huang XQ;  Zhao C;  Liu JQ;  Xu B;  Jin P;  Zeng YP;  Wang ZG;  Lei, W, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: ahleiwen@red.semi.ac.cn
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Defects  Lateral Composition Modulation  Photoluminescence  Molecular Beam Epitaxy  Quantum Wires  Semiconductor Iii-v Material  Dots  Heterostructures  Inalas/inp(001)  Spectroscopy  Wavelength  Inp(001)  
Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 269, 期号: 2-4, 页码: 181-186
Authors:  Shi GX;  Jin P;  Xu B;  Li CM;  Cui CX;  Wang YL;  Ye XL;  Wu J;  Wang ZG;  Shi, GX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: gxshi@red.semi.ac.cn
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Photoluminescence  
The evolution of InAs/InAlAs/InGaAlAs quantum dots after rapid thermal annealing 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 253, 期号: 1-4, 页码: 59-63
Authors:  Zhang ZY;  Jin P;  Li CM;  Ye XL;  Meng XQ;  Xu B;  Liu FQ;  Wang ZG;  Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Low Dimensional Structures  Nanostructures  Quantum Dots  Molecular Beam Epitaxy  Semiconducting Iii-v Materials  Laser Diode  Time-resolved Photoluminescence  
Correlation of structural and optical investigation of InGaAs/InAlAs quantum cascade laser 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 253, 期号: 1-4, 页码: 198-202
Authors:  Li CM;  Liu FQ;  Zhang ZY;  Meng XQ;  Jin P;  Wang ZG;  Li CM,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Lattice-mismatch  Microstructure  Radiation  X-ray Diffraction  Molecular Beam Epitaxy  Infrared Devices  Quantum Cascade Laser  Mu-m  
Realization of quantum cascade laser operating at room temperature 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 250, 期号: 3-4, 页码: 285-289
Authors:  Li CM;  Liu FQ;  Jin P;  Wang ZG;  Li CM,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Crystal Structure  Lattice-mismatch  Microsctucture  Radiation  X-ray Diffraction  Molecular Beam Epitaxy  Infrared Devices  Quantum Cascade Laser  Mu-m  
A novel application to quantum dot materials to the active region of superluminescent diodes 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 243, 期号: 1, 页码: 25-29
Authors:  Zhang ZY;  Meng XQ;  Jin P;  Li CM;  Qu SC;  Xu B;  Ye XL;  Wang ZG;  Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(195Kb)  |  Favorite  |  View/Download:954/369  |  Submit date:2010/08/12
Atomic Force Microscopy  Low Dimensional Structures  Quantum Dots  Strain  Molecular Beam Epitaxy  Superluminescent Diodes  1.3 Mu-m  High-power  Integrated Absorber  Inas Islands  Spectrum  Window  Layer  Size  
Dependence of optical properties on the structure of multi-layer self-organized InAs quantum dots emitting near 1.3 mu m 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 243, 期号: 3-4, 页码: 432-438
Authors:  Meng XQ;  Xu B;  Jin P;  Ye XL;  Zhang ZY;  Li CM;  Wang ZG;  Meng XQ,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(175Kb)  |  Favorite  |  View/Download:812/270  |  Submit date:2010/08/12
Low Dimensional Structures  Molecular Beam Epitaxy  Quantum Dots  Semiconducting Iii-v Materials  Photoluminescence