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Crack-free GaN/Si(111) epitaxial layers grown with InAlGaN alloy as compliant interlayer by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2005, 卷号: 279, 期号: 3-4, 页码: 335-340
Authors:  Wu JJ;  Han XX;  Li JM;  Li DB;  Lu Y;  Wei HY;  Cong GW;  Liu XL;  Zhu QS;  Wang ZG;  Wu, JJ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: jiejunw@red.semi.ac.cn
Adobe PDF(242Kb)  |  Favorite  |  View/Download:1103/406  |  Submit date:2010/03/17
Cracks  
Structural and optical properties of quaternary AlInGaN epilayers grown by MOCVD with various TMGa flows 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 260, 期号: 3-4, 页码: 388-393
Authors:  Liu JP;  Zhang BS;  Wu M;  Li DB;  Zhang JC;  Jin RQ;  Zhu JJ;  Chen J;  Wang JF;  Wang YT;  Yang H;  Liu, JP, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China.
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Triple-axis X-ray Diffraction  
Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 266, 期号: 4, 页码: 423-428
Authors:  Han XX;  Chen Z;  Li DB;  Wu JJ;  Li JM;  Sun XH;  Liu XL;  Han PD;  Wang XH;  Zhu QS;  Wang ZG;  Han, XX, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xxhan@red.semi.ac.cn
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Nanostructure  
Influence of the growth temperature of the high-temperature AlN buffer on the properties of GaN grown on Si(111) substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 263, 期号: 1-4, 页码: 4-11
Authors:  Lu Y;  Liu XL;  Wang XH;  Lu DC;  Li DB;  Han XX;  Cong GW;  Wang ZG;  Lu, Y, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: yuanlu@red.semi.ac.cn
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Substrates  
Strain accommodation of 3C-SiC grown on hydrogen-implanted Si (001) substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 257, 期号: 3-4, 页码: 321-325
Authors:  Zhang ZC;  Chen YH;  Li DB;  Zhang FQ;  Yang SY;  Ma BS;  Sun GS;  Wang ZG;  Zhang XP;  Zhang ZC,Chinese Acad Sci,Lab Semicond Mat Sci,Inst Semicond,Beijing 100083,Peoples R China.
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Substrate  Heteroepitaxy  Low Pressure Chemical Vapor Deposition  Semiconducting Silicon Carbide  Compliant Substrate  Critical Thickness  Silicon  Relaxation  Mechanism  Defects  Layers  
Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0001)sapphire substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 249, 期号: 1-2, 页码: 72-77
Authors:  Li DB;  Dong X;  Huang JS;  Liu XL;  Xu ZY;  Wang XH;  Zhang Z;  Wang ZG;  Li DB,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(249Kb)  |  Favorite  |  View/Download:955/314  |  Submit date:2010/08/12
Nanostructures  Stretched Exponential  Time-resolved Photolummescence  Metalorganic Vapor Phase Epitaxy  Nitrides  Inalgan  Inxalyga1-x-yn Quaternary Alloys  Time-resolved Photoluminescence  Multiple-quantum Wells  Alingan/gan Heterostructures  Gan  Decay  Luminescence  Sapphire  Devices  Silicon  
Growth temperature effect on the optical and material properties of AlxInyGa1-x-yN epilayers grown by MOCVD 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 247, 期号: 1-2, 页码: 84-90
Authors:  Huang JS;  Dong X;  Luo XD;  Li DB;  Liu XL;  Xu ZY;  Ge WK;  Huang JS,Chinese Acad Sci,Inst Semicond,Beijing 100083,Peoples R China.
Adobe PDF(227Kb)  |  Favorite  |  View/Download:887/268  |  Submit date:2010/08/12
Surfaces  X-ray Diffraction  Growth From High Temperature Solutions  Metalorganic Chemical Vapor Deposition  Nitrides  Semiconducting Iii-v Materials  Time-resolved Photoluminescence  Quantum-well  Luminescence  Diodes  Gan  
Strain relaxation of InP film directly grown on GaAs patterned compliant substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 243, 期号: 1, 页码: 71-76
Authors:  Zhang ZC;  Yang SY;  Zhang FQ;  Li DB;  Chen YH;  Wang ZG;  Zhang ZC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.
Adobe PDF(148Kb)  |  Favorite  |  View/Download:965/372  |  Submit date:2010/08/12
Dislocation  Strain  Molecular Beam Epitaxy  Organometallic Vapor Phase Epitaxy  Semiconductor Iii-v Materials  Critical Thickness  Heteroepitaxial Growth  Layers  Oxidation  Epitaxy  
Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2002, 卷号: 241, 期号: 3, 页码: 304-308
Authors:  Zhang ZY;  Xu B;  Jin P;  Meng XQ;  Li CM;  Ye XL;  Li DB;  Wang ZG;  Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(142Kb)  |  Favorite  |  View/Download:877/340  |  Submit date:2010/08/12
Atomic Force Microscopy  Low Dimensional Structures  Nanostructures  Molecular Beam Epitaxy  Semiconducting Iii-v Materials  Laser Diodes  Temperature-dependence  Threshold Current  Mu-m  Lasers