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Hydride vapor phase epitaxy of high quality {10over-barover-bar} semipolar GaN on m-plane sapphire coated with self-assembled SiO2 nanospheres 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 387, 页码: 101-105
Authors:  Yang, JK;  Wei, TB;  Huo, ZQ;  Hu, Q;  Zhang, YH;  Duan, RF;  Wang, JX
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Interface effect on structural and optical properties of type II InAs/GaSb superlattices 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 407, 页码: 37-41
Authors:  Huang, Jianliang;  Ma, Wenquan;  Wei, Yang;  Zhang, Yanhua;  Cui, Kai;  Shao, Jun
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Thickness influence of thermal oxide layers on the formation of self-catalyzed InAs nanowires on Si(111) by MOCVD 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 395, 页码: 55-60
Authors:  Wang, XY;  Yang, XG;  Du, WN;  Ji, HM;  Luo, S;  Yang, T
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Epitaxial growth of non-polar m-plane AIN film on bare and ZnO buffered m-sapphire 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 391, 页码: 111-115
Authors:  Wang, HT;  Jia, CH;  Xu, JK;  Chen, YH;  Chen, XW;  Zhang, WF
Favorite  |  View/Download:234/4  |  Submit date:2015/04/02
Efficiency improvement of InGaN light emitting diodes with embedded self-assembled SiO2 nanosphere arrays 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 394, 页码: 7-10
Authors:  Zhang, YH;  Wei, TB;  Wang, JX;  Fan, C;  Chen, Y;  Hu, Q;  Li, JM
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AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 395, 页码: 9-13
Authors:  Dong, P;  Yan, JC;  Zhang, Y;  Wang, JX;  Zeng, JP;  Geng, C;  Cong, PP;  Sun, LL;  Wei, TB;  Zhao, LX;  Yan, QF;  He, CG;  Qin, ZX;  Li, JM
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AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2014, 卷号: 395, 页码: 9-13
Authors:  Dong, P;  Yan, JC;  Zhang, Y;  Wang, JX;  Zeng, JP;  Geng, C;  Cong, PP;  Sun, LL;  Wei, TB;  Zhao, LX;  Yan, QF;  He, CG;  Qin, ZX;  Li, JM
Adobe PDF(2410Kb)  |  Favorite  |  View/Download:511/93  |  Submit date:2015/03/25
Hillock formation and suppression on c-plane homoepitaxial GaN Layers grown by metalorganic vapor phase epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2013, 卷号: 371, 页码: 7-10
Authors:  Zhou, Kun;  Liu, Jianping;  Zhang, Shuming;  Li, Zengcheng;  Feng, Meixin;  Li, Deyao;  Zhang, Liqun;  Wang, Feng;  Zhu, Jianjun;  Yang, Hui
Adobe PDF(739Kb)  |  Favorite  |  View/Download:814/289  |  Submit date:2013/08/27
Electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2013, 卷号: 372, 页码: 43-48
Authors:  Su, X. J.;  Xu, K.;  Ren, G. Q.;  Wang, J. F.;  Xu, Y.;  Zeng, X. H.;  Zhang, J. C.;  Cai, D. M.;  Zhou, T. F.;  Liu, Z. H.;  Yang, H.
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Purification of metallurgical silicon through directional solidification in a large cold crucible 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2012, 卷号: 355, 期号: 1, 页码: 145-150
Authors:  Liu T (Liu, Tong);  Dong ZY (Dong, Zhiyuan);  Zhao YW (Zhao, Youwen);  Wang J (Wang, Jun);  Chen T (Chen, Teng);  Xie H (Xie, Hui);  Li J (Li, Jian);  Ni HJ (Ni, Haijiang);  Huo DX (Huo, Dianxin)
Adobe PDF(799Kb)  |  Favorite  |  View/Download:1089/581  |  Submit date:2013/03/27