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Comparative studies of band structures for biaxial (100)-, (110)-, and (111)-strained GeSn: A first-principles calculation with GGA1U approach 期刊论文
JOURNAL OF APPLIED PHYSICS, 2015, 卷号: 118, 期号: 16, 页码: 107403
Authors:  Wenqi Huang;  Buwen Cheng;  Chunlai Xue;  Zhi Liu
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Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness 期刊论文
JOURNAL OF APPLIED PHYSICS, 2015, 卷号: 117, 页码: 055709
Authors:  J. Yang;  D. G. Zhao;  D. S. Jiang;  P. Chen;  J. J. Zhu;  Z. S. Liu;  L. C. Le;  X. J. Li;  X. G. He;  J. P. Liu;  H. Yang;  Y. T. Zhang;  G. T. Du
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Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 115, 期号: 16, 页码: 163704
Authors:  Yang, J;  Zhao, DG;  Jiang, DS;  Zhu, JJ;  Yang, H;  Chen, P;  Liu, ZS;  Le, LC;  Li, XJ;  He, XG;  Liu, JP;  Zhang, SM;  Wang, H
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The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 116, 期号: 16, 页码: 163708
Authors:  Li, X. J.;  Zhao, D. G.;  Jiang, D. S.;  Liu, Z. S.;  Chen, P.;  Zhu, J. J.;  Le, L. C.;  Yang, J.;  He, X. G.;  Zhang, S. M.;  Zhang, B. S.;  Liu, J. P.;  Yang, H.
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Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer 期刊论文
JOURNAL OF APPLIED PHYSICS, 2012, 卷号: 112, 期号: 11, 页码: 113105
Authors:  Chen P (Chen, P.);  Feng MX (Feng, M. X.);  Jiang DS (Jiang, D. S.);  Zhao DG (Zhao, D. G.);  Liu ZS (Liu, Z. S.);  Li L (Li, L.);  Wu LL (Wu, L. L.);  Le LC (Le, L. C.);  Zhu JJ (Zhu, J. J.);  Wang H (Wang, H.);  Zhang SM (Zhang, S. M.);  Yang H (Yang, H.)
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