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Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 8, 页码: Article no.83501
Authors:  Zhou XL;  Chen YH;  Zhang HY;  Zhou GY;  Li TF;  Liu JQ;  Ye XL;  Xu B;  Wang ZG;  Zhou, XL, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. zhouxl06@semi.ac.cn
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Inas Islands  Mu-m  Escape  Gaas  Gaas(100)  Substrate  
Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 109, 期号: 9, 页码: Article no.94311
Authors:  Zhou XL;  Chen YH;  Li TF;  Zhou GY;  Zhang HY;  Ye XL;  Xu B;  Wang ZG;  Zhou, XL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. zhouxl06@semi.ac.cn
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Self-organized Islands  Molecular-beam-epitaxy  Optical-properties  Surfaces  Emission  Density  Size  
Well-width dependence of in-plane optical anisotropy in (001) GaAs/AlGaAs quantum wells induced by in-plane uniaxial strain and interface asymmetry 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 105, 期号: 10, 页码: Art. No. 103108
Authors:  Tang CG;  Chen YH;  Xu B;  Ye XL;  Wang ZG;  Chen YH Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: yhchen@red.semi.ac.cn
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Aluminium Compounds  Gallium Arsenide  Iii-v Semiconductors  Internal Stresses  Reflectivity  Semiconductor Heterojunctions  Semiconductor Quantum Wells  
Strong in-plane optical anisotropy of asymmetric (001) quantum wells 期刊论文
JOURNAL OF APPLIED PHYSICS, 2006, 卷号: 99, 期号: 9, 页码: Art.No.096102
Authors:  Chen YH;  Ye XL;  Xu B;  Wang ZG;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: yhchen@red.semi.ac.cn
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Heterostructures  Spectroscopy  Interfaces  
Optical anisotropy and strain evolution of GaAs surfaces at the onset of the formation of InAs quantum dots 期刊论文
JOURNAL OF APPLIED PHYSICS, 2006, 卷号: 99, 期号: 7, 页码: Art.No.073507
Authors:  Chen YH;  Jin P;  Ye XL;  Xu B;  Wang ZG;  Yang Z;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: yhchen@red.semi.ac.cn
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Reflectance Difference Spectroscopy  Layer  
Strain-induced in-plane optical anisotropy in (001) GaAs/AlGaAs superlattice studied by reflectance difference spectroscopy 期刊论文
JOURNAL OF APPLIED PHYSICS, 2006, 卷号: 100, 期号: 11, 页码: Art.No.113122
Authors:  Tang CG;  Chen YH;  Ye XL;  Wang ZG;  Zhang WF;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: yhchen@red.semi.ac.cn
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Multiple-quantum Wells  
Photoluminescence study of self-assembled InAs/GaAs quantum dots covered by an InAlAs and InGaAs combination layer 期刊论文
JOURNAL OF APPLIED PHYSICS, 2002, 卷号: 92, 期号: 1, 页码: 511-514
Authors:  Zhang ZY;  Xu B;  Jin P;  Meng XQ;  Li CM;  Ye XL;  Wang ZG;  Zhang ZY,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Molecular-beam Epitaxy  1.3 Mu-m  Temperature-dependence  Growth  Gaas  Lasers  
Effect of growth temperature on luminescence and structure of self-assembled InAlAs/AlGaAs quantum dots 期刊论文
JOURNAL OF APPLIED PHYSICS, 2001, 卷号: 90, 期号: 4, 页码: 2048-2050
Authors:  Liu HY;  Xu B;  Qian JJ;  Ye XL;  Han Q;  Ding D;  Liang JB;  Zhong XR;  Wang ZG;  Liu HY,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Molecular-beam Epitaxy  Laser-diodes  Photoluminescence  Threshold  Emission  
Thermal redistribution of photocarriers between bimodal quantum dots 期刊论文
JOURNAL OF APPLIED PHYSICS, 2001, 卷号: 90, 期号: 4, 页码: 1973-1976
Authors:  Zhang YC;  Huang CJ;  Liu FQ;  Xu B;  Wu J;  Chen YH;  Ding D;  Jiang WH;  Ye XL;  Wang ZG;  Zhang YC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Temperature-dependence  Carrier Relaxation  Emission  
In-plane optical anisotropy of symmetric and asymmetric (001) GaAs/Al(Ga)As superlattices and quantum wells 期刊论文
JOURNAL OF APPLIED PHYSICS, 2001, 卷号: 90, 期号: 3, 页码: 1266-1270
Authors:  Ye XL;  Chen YH;  Wang JZ;  Xu B;  Wang ZG;  Yang Z;  Ye XL,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.
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Zincblende Semiconductors  Difference Spectroscopy  Inversion Asymmetry  Common-atom  Light-hole  Heterostructures  Interface