SEMI OpenIR
(Note: the search results are based on claimed items)

Browse/Search Results:  1-1 of 1 Help

Filters                    
Selected(0)Clear Items/Page:    Sort:
Optical anisotropy and strain evolution of GaAs surfaces at the onset of the formation of InAs quantum dots 期刊论文
JOURNAL OF APPLIED PHYSICS, 2006, 卷号: 99, 期号: 7, 页码: Art.No.073507
Authors:  Chen YH;  Jin P;  Ye XL;  Xu B;  Wang ZG;  Yang Z;  Chen, YH, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: yhchen@red.semi.ac.cn
Adobe PDF(348Kb)  |  Favorite  |  View/Download:892/240  |  Submit date:2010/04/11
Reflectance Difference Spectroscopy  Layer