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Time-Resolved Photoluminescence of Metamorphic InGaAs Quantum Wells 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 10, 页码: Art.No.107803
Authors:  Ma SS (Ma Shan-Shan);  Wang, BR (Wang Bao-Rui);  Sun BQ (Sun Bao-Quan);  Wu DH (Wu Dong-Hai);  Ni HQ (Ni Hai-Qiao);  Niu ZC (Niu Zhi-Chuan);  Ma, SS, Chinese Acad Sci, SKLSM, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: bqsun@semi.ac.cn
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Molecular-beam Epitaxy  
Characterization of Thick GaN Films Directly Grown on Wet-Etching Patterned Sapphire by HVPE 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 9, 页码: Art. No. 096801
Authors:  Hu Q;  Wei TB;  Duan RF;  Yang JK;  Huo ZQ;  Lu TC;  Zeng YP;  Hu Q Sichuan Univ Minist Educ Dept Phys Chengdu 610064 Peoples R China. E-mail Address: lutiecheng@scu.edu.cn;  ypzeng@red.semi.ac.cn
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Vapor-phase Epitaxy  Dislocations  Substrate  Layer  
High Polarization Single Mode Photonic Crystal Microlaser 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 8, 页码: Art. No. 084210
Authors:  Chen W;  Xing MX;  Zhou WJ;  Liu AJ;  Zheng WH;  Chen W Chinese Acad Sci Inst Semicond Nanooptoelect Lab Beijing 100083 Peoples R China. E-mail Address: whzheng@semi.ac.cn
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Defect Laser  Nanocavities  Slab  
Transient Reorientation of a Doped Liquid Crystal System under a Short Laser Pulse 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 8, 页码: Art. No. 086108
Authors:  Li T;  Xiang Y;  Liu YK;  Wang J;  Yang SL;  Li T China Three Gorges Univ Coll Chem & Life Sci Yichang 443002 Peoples R China. E-mail Address: frank_xiang68@yahoo.com.cn
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Induced Freedericksz Transition  Azo-dye  Nonlinearity  
Indium-Induced Effect on Polarized Electroluminescence from InGaN/GaN MQWs Light Emitting Diodes 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 8, 页码: Art. No. 087802
Authors:  Ruan J;  Yu TJ;  Jia CY;  Tao RC;  Wang ZG;  Zhang GY;  Yu TJ Peking Univ Sch Phys State Key Lab Mesoscop Phys Beijing 100871 Peoples R China. E-mail Address: tongjun@pku.edu.cn
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Quantum-well Lasers  Optical Gain  Emission  Gan  Photoluminescence  Semiconductors  Luminescence  Spectra  Origin  Energy  
GaAs-Based Metamorphic Long-Wavelength InAs Quantum Dots Grown by Molecular Beam Epitaxy 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 6, 页码: Art. No. 067801
Authors:  Wang PF;  Xiong YH;  Wang HL;  Huang SS;  Ni HQ;  Xu YQ;  He ZH;  Niu ZC;  Wang PF Chinese Acad Sci Inst Semicond State Key Lab Superlattice & Microstruct Beijing 100083 Peoples R China. E-mail Address: pfwang@semi.ac.cn
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Mu-m  Laser  Islands  
Interfaces in InAs/GaSb Superlattices Grown by Molecular Beam Epitaxy 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 4, 页码: Art. No. 047802
Authors:  Guo J;  Sun WG;  Peng ZY;  Zhou ZQ;  Xu YQ;  Niu ZC;  Guo J NW Polytech Univ Sch Mat Xian 710000 Peoples R China. E-mail Address: jieggg1020@sina.com
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Inas  
Anisotropic Spin Splitting in Step Quantum Wells 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 3, 页码: Art. No. 037103
Authors:  Hao YF;  Chen YH;  Hao GD;  Wang ZG;  Hao YF Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: yhchen@red.semi.ac.cn
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Relaxation Anisotropy  Inversion Asymmetry  Heterostructures  Layers  
GaAs Based InAs/GaSb Superlattice Short Wavelength Infrared Detectors Grown by Molecular Beam Epitaxy 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 2, 页码: Art. No. 028102
Authors:  Tang B;  Xu YQ;  Zhou ZQ;  Hao RT;  Wang GW;  Ren ZW;  Niu ZC;  Xu YQ Chinese Acad Sci Inst Semicond State Key Lab Superlattices & Microstruct Beijing 100083 Peoples R China. E-mail Address: yingqxu@semi.ac.cn
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Inas/ga1-xinxsb Superlattice  Gasb  Heterojunctions  Photodiodes  Segregation  Layers  Inas  Alsb  
Metamorphic InGaAs Quantum Well Laser Diodes at 1.5 mu on GaAs Grown by Molecular Beam Epitaxy 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 1, 页码: Art. No. 014214
Authors:  Wang HL;  Wu DH;  Wu BP;  Ni HQ;  Huang SS;  Xiong YH;  Wang PF;  Han Q;  Niu ZC;  Tangring I;  Wang SM;  Wang HL Chinese Acad Sci Inst Semicond State Key Lab Superlattice & Microstruct Beijing 10008 Peoples R China. E-mail Address: hlwang_19841220@163.com
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Threshold Current-density