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The composition and interfacial properties of annealed AlN films deposited on 4H-SiC by atomic layer deposition 期刊论文
Materials Science in Semiconductor Processing, 2019, 卷号: 94, 页码: 107-115
Authors:  Jun Chen ;   Bowen Lv ;   Feng Zhang ;   Yinshu Wang ;   Xingfang Liu ;   Guoguo Yan ;   Zhanwei Shen ;   Zhengxin Wen ;   Lei Wang ;   Wanshun Zhao ;   Guosheng Sun ;   Chao Liu ;   Yiping Zeng
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Design and fabrication of 10-kV silicon–carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 6, 页码: 068504
Authors:  Zheng-Xin Wen;   Feng Zhang;   Zhan-Wei Shen;   Jun Chen;   Ya-Wei He;   Guo-Guo Yan;   Xing-Fang Liu;   Wan-Shun Zhao;   Lei Wang;   Guo-Sheng Sun;   Yi-Ping Zeng
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Homoepitaxial growth of multiple 4H-SiC wafers assembled in a simple holder via conventional chemical vapor deposition 期刊论文
Journal of Crystal Growth, 2019, 卷号: 507, 页码: 283-287
Authors:  X.F. Liu ;   G.G. Yan ;   Z.W. Shen ;   Z.X. Wen ;   J. Chen ;   Y.W. He ;   W.S. Zhao ;   L. Wang ;   M. Guan ;   F. Zhang ;   G.S. Sun ;   Y.P. Zeng
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The influence of growth temperature on 4H-SiC epilayers grown on different off-angle (0001) Si-face substrates 期刊论文
Journal of Crystal Growth, 2019, 卷号: 507, 页码: 175-179
Authors:  G.G. Yan ;   X.F. Liu ;   Z.W. Shen ;   W.S. Zhao ;   L. Wang ;   Y.X. Cui ;   J.T. Li ;   F. Zhang ;   G.S. Sun ;   Y.P. Zeng
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Semiconductor–metal transition in GaAs nanowires under high pressure 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 7, 页码: 076401
Authors:  Yi-Lan Liang;  Zhen Yao;  Xue-Tong Yin;  Peng Wang;  Li-Xia Li;  Dong Pan;  Hai-Yan Li;  Quan-Jun Li;  Bing-Bing Liu and Jian-Hua Zhao
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Design and fabrication of double AlGaN/GaN distributed Bragg reflector stack mirror for the application of GaN-based optoelectronic devices 期刊论文
Journal of Materials Science: Materials in Electronics, 2019, 卷号: 30, 期号: 4, 页码: 3277-3282
Authors:  Gaoqiang Deng;   Yuantao Zhang;   Pengchong Li ;   Ye Yu ;   Xu Han ;   Liang Chen ;   Long Yan ;   Xin Dong ;  Degang Zhao;  Guotong Du
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Improvement of fast homoepitaxial growth and defect reduction techniques of thick 4H-SiC epilayers 期刊论文
Journal of Crystal Growth, 2019, 卷号: 55, 页码: 1-4
Authors:  G.G. Yan ;   X.F. Liu ;   Z.W. Shen ;   Z.X. Wen ;   J. Chen ;   W.S. Zhao ;   L. Wang ;   F. Zhang ;   X.H. Zhang ;   X.G. Li ;   G.S. Sun ;   Y.P. Zeng ;   Z.G. Wang
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Epitaxial Growth and Magnetic Properties of NiMnAs FilmsonGaAs Substrates 期刊论文
CHINESE PHYSICS LETTERS, 2019, 卷号: 36, 期号: 1, 页码: 017501
Authors:  Jia-Lin Ma ;   Hai-Long Wang ;   Xing-Min Zhang ;   Shuai Yan ;   Wen-Sheng Yan ;   Jian-Hua Zhao
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Direct Wide Bandgap 2D GeSe 2 Monolayer toward Anisotropic UV Photodetection 期刊论文
Advanced Optical Materials, 2019, 卷号: 7, 期号: 19, 页码: 1900622
Authors:  Yong Yan;   Wenqi Xiong;   Shasha Li;   Kai Zhao;   Xiaoting Wang;   Jian Su;   Xiaohui Song;   Xueping Li;   Shuai Zhang;   Huai Yang;   Xinfeng Liu;   Lang Jiang;   Tianyou Zhai;   Congxin Xia;   Jingbo Li;   Zhongming Wei
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Single-electron transport through single and coupling dopant atoms in silicon junctionless nanowire transistor 期刊论文
Chin. Phys. B, 2019, 卷号: 28, 期号: 12, 页码: 127302
Authors:  Xiao-Di Zhang ;   Wei-Hua Han ;   Wen Liu ;   Xiao-Song Zhao ;   Yang-Yan Guo ;   Chong Yang ;   Jun-Dong Chen ;   Fu-Hua Yang
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