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Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT 期刊论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2014, 卷号: 68, 期号: 1, 页码: 10105
Authors:  Qu, SQ;  Wang, XL;  Xiao, HL;  Wang, CM;  Jiang, LJ;  Feng, C;  Chen, H;  Yin, HB;  Yan, JD;  Peng, EC;  Kang, H;  Wang, ZG;  Hou, X
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Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer 期刊论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2014, 卷号: 66, 期号: 2, 页码: 20101
Authors:  Qu, SQ;  Wang, XL;  Xiao, HL;  Hou, X;  Wang, CM;  Jiang, LJ;  Feng, C;  Chen, H;  Yin, HB;  Peng, EC;  Kang, H;  Wang, ZG
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Two-dimensional electron and hole gases in InxGa1-xN/AlyGa1-yN/GaN heterostructure for enhancement mode operation 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 116, 期号: 5, 页码: 054502
Authors:  Yan, JD;  Wang, XL;  Wang, Q;  Qu, SQ;  Xiao, HL;  Peng, EC;  Kang, H;  Wang, CM;  Feng, C;  Yin, HB;  Jiang, LJ;  Li, BQ;  Wang, ZG;  Hou, X
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High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes 期刊论文
CHINESE PHYSICS LETTERS, 2014, 卷号: 31, 期号: 6, 页码: 068502
Authors:  Kang, H;  Wang, Q;  Xiao, HL;  Wang, CM;  Jiang, LJ;  Feng, C;  Chen, H;  Yin, HB;  Wang, XL;  Wang, ZG;  Hou, X
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Self-consistent simulation of carrier confinement characteristics in (AlyGa1-yN/AlN)SLs/GaN/(InxGa1-xN/GaN)MQW/GaN heterostructures 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2012, 卷号: 523, 页码: 88-93
Authors:  Ding, JQ;  Wang, XL;  Xiao, HL;  Wang, CM;  Yin, HB;  Chen, H;  Feng, C;  Jiang, LJ
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Raman study on dislocation in high Al content AlxGa1-xN 期刊论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2012, 卷号: 58, 期号: 1, 页码: 10102
Authors:  Pan, X;  Wang, XL;  Xiao, HL;  Wang, CM;  Feng, C;  Jiang, LJ;  Yin, H;  Chen, H
Adobe PDF(308Kb)  |  Favorite  |  View/Download:1206/355  |  Submit date:2013/01/29
Numerical optimization of carrier confinement characteristics in (AlxGa1-xN/AlN)SLs/GaN heterostructures 期刊论文
PHYSICA B-CONDENSED MATTER, 2012, 卷号: 407, 期号: 18, 页码: 3920-3924
Authors:  Ding JQ (Ding, Jieqin);  Wang XL (Wang, Xiaoliang);  Xiao HL (Xiao, Hongling);  Wang CM (Wang, Cuimei);  Yin HB (Yin, Haibo);  Chen H (Chen, Hong);  Feng C (Feng, Chun);  Jiang LJ (Jiang, Lijuan)
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Comparison of as-grown and annealed GaN/InGaN:Mg samples 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 34, 页码: 345101
Authors:  Deng QW;  Wang XL;  Xiao HL;  Wang CM;  Yin HB;  Chen H;  Lin DF;  Jiang LJ;  Feng C;  Li JM;  Wang ZG;  Hou X;  Deng, QW (reprint author), Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China, daven@semi.ac.cn
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Light-emitting-diodes  Vapor-phase Epitaxy  Band-gap  Mg  Photoluminescence  Ingan  Dependence  Strain  Energy  Inn  
Behavioural investigation of InN nanodots by surface topographies and phase images 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 44, 页码: 445306
Authors:  Deng, QW;  Wang, XL;  Xiao, HL;  Wang, CM;  Yin, HB;  Chen, H;  Lin, DF;  Li, JM;  Wang, ZG;  Hou, X;  Deng, QW (reprint author), Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China,daven@semi.ac.cn
Adobe PDF(1414Kb)  |  Favorite  |  View/Download:1074/182  |  Submit date:2012/01/06
Quantum Dots  Solar-cells  Growth  Films  Gan  
An investigation on In(x)Ga(1-x)N/GaN multiple quantum well solar cells 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 26, 页码: 265103
Authors:  Deng QW;  Wang XL;  Xiao HL;  Wang CM;  Yin HB;  Chen H;  Hou QF;  Lin DF;  Li JM;  Wang ZG;  Hou X;  Deng, QW (reprint author), Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China, daven@semi.ac.cn
Adobe PDF(623Kb)  |  Favorite  |  View/Download:921/225  |  Submit date:2012/01/06
Fundamental-band Gap  Phase-separation  Efficiency  Inn  Emission  Layers  Model