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Stable, high power, high efficiency picosecond ultraviolet generation at 355 nm in K 3 B 6 O 10 Br crystal 期刊论文
Optics Communications, 2018, 卷号: 416, 页码: 71–76
Authors:  Z.Y. Hou ;   L.R. Wang ;   M.J. Xia ;   D.X. Yan ;   Q.L. Zhang ;   L. Zhang ;   L.J. Liu ;   D.G. Xu ;   D.X. Zhang ;   X.Y. Wang ;   R.K. Li ;   C.T. Chen
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Atomic-scale understanding of high thermal stability of the Mo/CoFeB/MgO spin injector for spin-injection in remanence† 期刊论文
Nanoscale, 2018, 卷号: 10, 页码: 10213
Authors:  Bingshan Tao;   Philippe Barate;   Xavier Devaux;   Pierre Renucci;   Julien Frougier;   Abdelhak Djeffal;   Shiheng Liang;   Bo Xu;   d Michel Hehn;   Henri Jaffrès;   Jean-Marie George;   Xavier Marie;   Stéphane Mangin;   Xiufeng Han;   Zhanguo Wang ;   Yuan Lu
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Free-Standing Two-Dimensional Single-Crystalline InSb Nanosheets 期刊论文
Nano Letters, 2016, 卷号: 16, 期号: 2, 页码: 834-841
Authors:  D. Pan;  D. X. Fan;  N. Kang;  J. H. Zhi;  X. Z. Yu;  H. Q. Xu;  J. H. Zhao
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Tailoring the interfacial exchange coupling of perpendicularly magnetized Co/L10-Mn1.5Ga bilayers 期刊论文
Journal of Physics: D Applied Physics, 2016, 卷号: 49, 期号: 24, 页码: 245003
Authors:  J X Xiao;  J Lu;  W Q Liu;  Y W Zhang;  H L Wang;  L J Zhu;  H X Deng;  D H Wei;  Y B Xu;  J H Zhao
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144 W高功率、高亮度半导体蓝光激光器 期刊论文
中国激光, 2016, 期号: 5, 页码: 287
Authors:  吴鹏;  张玲;  于海娟;  袁仙丹;  张志研;  赵鹏飞;  李港;  王旭葆;  林学春
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石墨烯等二维材料平面光学性质研究 学位论文
, 北京: 中国科学院研究生院, 2015
Authors:  秦旭东
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石墨烯  二维材料  平面光学各向异性  偏振拉曼光谱  偏振光电流效应  微区成像  
Mechanical properties of individual InAs nanowires studied by tensile tests 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 104, 期号: 10, 页码: 103110
Authors:  Li, X;  Wei, XL;  Xu, TT;  Ning, ZY;  Shu, JP;  Wang, XY;  Pan, D;  Zhao, JH;  Yang, T;  Chen, Q
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Suspended InAsnanowire gate-all-around field-effect transistors 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 105, 期号: 11, 页码: 113106
Authors:  Li, Q;  Huang, SY;  Pan, D;  Wang, JY;  Zhao, JH;  Xu, HQ
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Coherent Longitudinal Acoustic Phonon Approaching THz Frequency in Multilayer Molybdenum Disulphide 期刊论文
SCIENTIFIC REPORTS, 2014, 卷号: 4, 页码: 5722
Authors:  Ge, SF;  Liu, XF;  Qiao, XA;  Wang, QS;  Xu, Z;  Qiu, J;  Tan, PH;  Zhao, JM;  Sun, D
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Electrical characteristics of field-effect transistors based on indium arsenide nanowire thinner than 10nm 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 105, 期号: 14, 页码: 143101
Authors:  Fu, MQ;  Pan, D;  Yang, YJ;  Shi, TW;  Zhang, ZY;  Zhao, JH;  Xu, HQ;  Chen, Q
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