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基于频时映射的任意波形产生技术的研究 学位论文
, 北京: 中国科学院研究生院, 2018
Authors:  朱馨怡
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脉冲整形  微波光子  任意波形产生  频率-时间映射  
Arbitrary Waveform Generation Based on Dispersion-Free Wavelength-to-Time Mapping Technique 期刊论文
IEEE Photonics Journal, 2018, 卷号: 10, 期号: 1, 页码: 5500609
Authors:  Xinyi Zhu ;   Hao Sun ;   Wei Li ;   Ninghua Zhu ;   Ming Li
Adobe PDF(689Kb)  |  Favorite  |  View/Download:30/1  |  Submit date:2019/11/12
Real-Time Optical Spectrum Fourier Transform With Time–Bandwidth Product Compression 期刊论文
IEEE Photonics Journal, 2018, 卷号: 10, 期号: 1, 页码: 7800214
Authors:  Hao Sun;  Xinyi Zhu;  Wei Li;  Ning Hua Zhu;  Ming Li
Adobe PDF(1344Kb)  |  Favorite  |  View/Download:22/0  |  Submit date:2019/11/15
Reconfigurable microwave signal processor with a phase shift of π 期刊论文
Optics express, 2018, 卷号: 26, 期号: 8, 页码: 10358-10370
Authors:  Hao Sun;  Xinyi Zhu;  Wei Li;  Ninghua Zhu;  Ming Li
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Real-Time Optical Spectrum Fourier Transform with Time Bandwidth Product Compression 期刊论文
IEEE Photonics Journal, 2017, 卷号: 10, 期号: 1, 页码: 1-14
Authors:  Hao Sun;  Xinyi Zhu;  Wei Li;  Ninghua Zhu;  Ming Li
Adobe PDF(867Kb)  |  Favorite  |  View/Download:16/0  |  Submit date:2018/11/30
Photonic true time delay beamforming technique with ultra-fast beam scanning 期刊论文
OPTICS EXPRESS, 2017, 卷号: 25, 期号: 13, 页码: 14524
Authors:  LIHONG ZHANG;  MING LI;  NUANNUAN SHI;  XINYI ZHU;  SHUQIAN SUN;  JIAN TANG;  WEI LI;  NINGHUA ZHU
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Influence of defects in n(-)-GaN layer on the responsivity of Schottky barrier ultraviolet photodetectors 期刊论文
APPLIED PHYSICS LETTERS, 2007, 卷号: 90, 期号: 6, 页码: Art.No.062106
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Liu ZS;  Zhang SM;  Liang JW;  Yang H;  Li X;  Li XY;  Gong HM;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: dgzhao@red.semi.ac.cn
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Chemical-vapor-deposition  
Parasitic reaction and its effect on the growth rate of AlN by metalorganic chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2006, 卷号: 289, 期号: 1, 页码: 72-75
Authors:  Zhao DG;  Zhu JJ;  Jiang DS;  Yang H;  Liang JW;  Li XY;  Gong HM;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: dgzhao@red.semi.ac.cn
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Growth Rate  Parasitic Reaction  Mocvd  Aln  Gas-phase Reactions  Movpe Growth  Algan Movpe  Alxga1-xn  
Role of edge dislocations in enhancing the yellow luminescence of n-type GaN 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 88, 期号: 24, 页码: Art.No.241917
Authors:  Zhao DG;  Jiang DS;  Zhu JJ;  Liu ZS;  Zhang SM;  Liang JW;  Li X;  Li XY;  Gong HM;  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. E-mail: dgzhao@red.semi.ac.cn
Adobe PDF(68Kb)  |  Favorite  |  View/Download:1433/646  |  Submit date:2010/04/11
Chemical-vapor-deposition  Molecular-beam Epitaxy  X-ray-diffraction  Mg-doped Gan  Undoped Gan  Photoluminescence Bands  Threading Dislocations  Positron-annihilation  Growth Stoichiometry  Gallium Nitride