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Robust emergence of a topological Hall effect in MnGa/heavy metal bilayers 期刊论文
PHYSICAL REVIEW B, 2018, 卷号: 97, 期号: 6, 页码: 060407
Authors:  K. K. Meng;   X. P. Zhao;   P. F. Liu;   Q. Liu;   Y. Wu;   Z. P. Li;   J. K. Chen;   J. Miao;   X. G. Xu;   J. H. Zhao;   Y. Jiang
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Bias Dependence of the Electrical Spin Injection into GaAs from Co-Fe-B=MgO Injectors with Different MgO Growth Processes 期刊论文
PHYSICAL REVIEW APPLIED, 2017, 卷号: 8, 页码: 054027
Authors:  P. Barate;  S. H. Liang;  T. T. Zhang;  J. Frougier;  B. Xu;  P. Schieffer;  M. Vidal;  H. Jaffrès;  B. Lépine;  S. Tricot;  F. Cadiz;  T. Garandel;  J. M. George;  T. Amand;  X. Devaux;  M. Hehn;  S. Mangin;  B. Tao;  X. F. Han;  Z. G. Wang;  X. Marie;  Y. Lu;  P. Renucci
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Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector 期刊论文
APPLIED PHYSICS LETTERS, 2017, 卷号: 108, 页码: 152404
Authors:  B. S. Tao;  P. Barate;  J. Frougier;  P. Renucci;  B. Xu;  A. Djeffal;  H. Jaffrès;  J.-M. George;  X. Marie;  S. Petit-Watelot;  S. Mangin;  X. F. Han;  Z. G. Wang;  Y. Lu
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Free-Standing Two-Dimensional Single-Crystalline InSb Nanosheets 期刊论文
Nano Letters, 2016, 卷号: 16, 期号: 2, 页码: 834-841
Authors:  D. Pan;  D. X. Fan;  N. Kang;  J. H. Zhi;  X. Z. Yu;  H. Q. Xu;  J. H. Zhao
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Helicity-dependent photocurrent induced by the in-plane transverse electric current in an InAs quantum well 期刊论文
Scientific Reports, 2016, 卷号: 6, 页码: 31189
Authors:  J. B. Li;  X. G. Wu;  G. W. Wang;  Y. Q. Xu;  Z. C. Niu;  X. H. Zhang
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Mid-infrared Photoconductive Response in AlGaN/GaN Step Quantum Wells 期刊论文
Scientific Reports, 2015, 卷号: 5, 页码: 14386
Authors:  X. Rong;  X. Q. Wang;  G. Chen;  X. T. Zheng;  P. Wang;  F. J. Xu;  Z. X. Qin;  N. Tang;  Y. H. Chen;  L. W. Sang;  M. Sumiya;  W. K. Ge;  B. Shen
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Electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2013, 卷号: 372, 页码: 43-48
Authors:  Su, X. J.;  Xu, K.;  Ren, G. Q.;  Wang, J. F.;  Xu, Y.;  Zeng, X. H.;  Zhang, J. C.;  Cai, D. M.;  Zhou, T. F.;  Liu, Z. H.;  Yang, H.
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Effect of polarization on intersubband transition in AlGaN/GaN multiple quantum wells 期刊论文
Applied Physics Letters, 2013, 卷号: 102, 期号: 19, 页码: 192109 - 192109-5
Authors:  G. Chen, Z. L. Li, X. Q. Wang, C. C. Huang, X. Rong, L. W. Sang, F. J. Xu, N. Tang, Z. X. Qin, M. Sumiya, Y. H. Chen, W. K. Ge, B. Shen
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Ultrafast Kerr rotations and zero-field dephasing time of electron spins in InAs/GaAs quantum disks 期刊论文
PHYSICS LETTERS A, 2010, 卷号: 374, 期号: 47, 页码: 4793-4796
Authors:  Ning JQ (Ning J. Q.);  Xu SJ (Xu S. J.);  Wei ZF (Wei Z. F.);  Ruan XZ (Ruan X. Z.);  Ji Y (Ji Yang);  Zheng HZ (Zheng H. Z.);  Liu HC (Liu H. C.);  Xu, SJ, Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China. 电子邮箱地址: sjxu@hkucc.hku.hk
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Optical Kerr Effect  Electron Spin  Quantum Disks  Inas/gaas  Refractive-index  Coherence  Gaas  Semiconductors  
Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2010, 卷号: 43, 期号: 48, 页码: Art. No. 485102
Authors:  Zhou XL (Zhou X. L.);  Chen YH (Chen Y. H.);  Jia CH (Jia C. H.);  Ye XL (Ye X. L.);  Xu B (Xu Bo);  Wang ZG (Wang Z. G.);  Zhou, XL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhouxl06@semi.ac.cn
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Dependence  Spectra