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Unveiling the Mechanism for the Split Hysteresis Loop in Epitaxial Co2Fe1-xMnxAl Full-Heusler Alloy Films 期刊论文
Scientific Reports, 2016, 卷号: 6, 页码: 18615
Authors:  X. D. Tao;  H. L. Wang;  B. F. Miao;  L. Sun;  B. You;  D. Wu;  W. Zhang;  H. P. Oepen;  J. H. Zhao;  H. F. Ding
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Unveiling the Mechanism for the Split Hysteresis Loop in Epitaxial Co2Fe1-xMnxAl Full-Heusler Alloy Films 期刊论文
Scientific Reports, 2015, 卷号: 5, 页码: 18615
Authors:  X. D. Tao;  H. L. Wang;  B. F. Miao;  L. Sun;  B. You;  D. Wu;  W. Zhang;  H. P. Oepen;  J. H. Zhao;  H. F. Ding
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Influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 89, 期号: 3, 页码: Art.No.033503
Authors:  Wang RX (Wang R. X.);  Xu SJ (Xu S. J.);  Djurisic AB (Djurisic A. B.);  Beling CD (Beling C. D.);  Cheung CK (Cheung C. K.);  Cheung CH (Cheung C. H.);  Fung S (Fung S.);  Zhao DG (Zhao D. G.);  Yang H (Yang H.);  Tao XM (Tao X. M.);  Xu, SJ, Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China. E-mail: sjxu@hkucc.hku.hk
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Molecular-beam Epitaxy  N-type Gan  Electrical-properties  Bias Leakage  Diodes  Oxygen  
Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of Au/GaN Schottky contacts 期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 89, 期号: 14, 页码: Art.No.143505
Authors:  Wang RX (Wang R. X.);  Xu SJ (Xu S. J.);  Shi SL (Shi S. L.);  Beling CD (Beling C. D.);  Fung S (Fung S.);  Zhao DG (Zhao D. G.);  Yang H (Yang H.);  Tao XM (Tao X. M.);  Wang, RX, Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China. E-mail: sjxu@hkucc.hku.hk
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Dislocations  Degradation  
InGaAs红外光探测器 专利
专利类型: 发明, 公开日期: 2014-05-21
Inventors:  韦欣;  许斌宗;  宋国峰;  刘杰涛;  徐云;  相春平;  付东
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基于表面等离子体效应增强吸收的InGaAs光探测器 专利
专利类型: 发明, 公开日期: 2014-07-23
Inventors:  宋国峰;  许斌宗;  韦欣;  刘杰涛;  相春平;  付东;  徐云
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