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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Unveiling the Mechanism for the Split Hysteresis Loop in Epitaxial Co2Fe1-xMnxAl Full-Heusler Alloy Films
期刊论文
Scientific Reports, 2016, 卷号: 6, 页码: 18615
Authors:
X. D. Tao
;
H. L. Wang
;
B. F. Miao
;
L. Sun
;
B. You
;
D. Wu
;
W. Zhang
;
H. P. Oepen
;
J. H. Zhao
;
H. F. Ding
Adobe PDF(1312Kb)
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View/Download:117/1
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Submit date:2017/03/16
Unveiling the Mechanism for the Split Hysteresis Loop in Epitaxial Co2Fe1-xMnxAl Full-Heusler Alloy Films
期刊论文
Scientific Reports, 2015, 卷号: 5, 页码: 18615
Authors:
X. D. Tao
;
H. L. Wang
;
B. F. Miao
;
L. Sun
;
B. You
;
D. Wu
;
W. Zhang
;
H. P. Oepen
;
J. H. Zhao
;
H. F. Ding
Adobe PDF(1252Kb)
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View/Download:140/0
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Submit date:2016/03/29
Influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts
期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 89, 期号: 3, 页码: Art.No.033503
Authors:
Wang RX (Wang R. X.)
;
Xu SJ (Xu S. J.)
;
Djurisic AB (Djurisic A. B.)
;
Beling CD (Beling C. D.)
;
Cheung CK (Cheung C. K.)
;
Cheung CH (Cheung C. H.)
;
Fung S (Fung S.)
;
Zhao DG (Zhao D. G.)
;
Yang H (Yang H.)
;
Tao XM (Tao X. M.)
;
Xu, SJ, Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China. E-mail: sjxu@hkucc.hku.hk
Adobe PDF(85Kb)
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View/Download:1129/373
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Submit date:2010/04/11
Molecular-beam Epitaxy
N-type Gan
Electrical-properties
Bias Leakage
Diodes
Oxygen
Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of Au/GaN Schottky contacts
期刊论文
APPLIED PHYSICS LETTERS, 2006, 卷号: 89, 期号: 14, 页码: Art.No.143505
Authors:
Wang RX (Wang R. X.)
;
Xu SJ (Xu S. J.)
;
Shi SL (Shi S. L.)
;
Beling CD (Beling C. D.)
;
Fung S (Fung S.)
;
Zhao DG (Zhao D. G.)
;
Yang H (Yang H.)
;
Tao XM (Tao X. M.)
;
Wang, RX, Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China. E-mail: sjxu@hkucc.hku.hk
Adobe PDF(256Kb)
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View/Download:968/233
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Submit date:2010/04/11
Dislocations
Degradation
InGaAs红外光探测器
专利
专利类型: 发明, 公开日期: 2014-05-21
Inventors:
韦欣
;
许斌宗
;
宋国峰
;
刘杰涛
;
徐云
;
相春平
;
付东
Adobe PDF(1647Kb)
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Submit date:2014/11/24
基于表面等离子体效应增强吸收的InGaAs光探测器
专利
专利类型: 发明, 公开日期: 2014-07-23
Inventors:
宋国峰
;
许斌宗
;
韦欣
;
刘杰涛
;
相春平
;
付东
;
徐云
Adobe PDF(1226Kb)
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View/Download:502/76
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Submit date:2014/11/24