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快速熔融法制备Si基Ge-on-insulator结构基础研究 学位论文
, 北京: 中国科学院研究生院, 2015
Authors:  温娟娟
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Goi  Rmg  光致发光  晶格旋转  Si-ge互扩散  
Effects of Rapid Thermal Process Temperatures on Strain and Si Concentration Distributions in Ge-on-Insulator Structures Formed by Rapid Melt Growth 期刊论文
ECS SOLID STATE LETTERS, 2014, 卷号: 3, 期号: 7, 页码: Q33-Q35
Authors:  Wen, JJ;  Zhang, DL;  Liu, Z;  Zhou, TW;  Xue, CL;  Zuo, YH;  Li, CB;  Wang, QM;  Cheng, BW
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Zn_(0.83)Mn_(0.17)Se和ZnSe/Zn_(0.84)Mn_(0.16)Se超晶格材料中Mn~(2+)的压力光谱研究 期刊论文
高压物理学报, 2011, 卷号: 25, 期号: 5, 页码: 385-389
Authors:  王文杰;  邓加军;  丁琨
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氮化镓基多波段探测器及其制作方法 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-01-13, 2010-08-12
Inventors:  刘文宝;  孙 苋;  赵德刚;  刘宗顺;  张书明;  朱建军;  杨 辉
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利用光辅助氧化湿法刻蚀Ⅲ族氮化物的方法 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2010-01-13, 2010-08-12
Inventors:  刘文宝;  孙 苋;  赵德刚;  刘宗顺;  张书明;  朱建军;  杨 辉
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Abnormal photoabsorption in high resistance GaN epilayer 期刊论文
ACTA PHYSICA SINICA, 2010, 卷号: 59, 期号: 11, 页码: 8048-8051
Authors:  Liu WB (Liu Wen-Bao);  Zhao DG (Zhao De-Gang);  Jiang DS (Jiang De-Sheng);  Liu ZS (Liu Zong-Shun);  Zhu JJ (Zhu Jian-Jun);  Zhang SM (Zhang Shu-Ming);  Yang H (Yang Hui);  Liu, WB, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. wbliu@semi.ac.cn
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Gan  Exciton  Photovoltaic Spectroscopy  Msm  Photoresponsivity  
Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 5, 页码: Art. No. 057802
Authors:  Zhao DG (Zhao De-Gang);  Zhang S (Zhang Shuang);  Liu WB (Liu Wen-Bao);  Hao XP (Hao Xiao-Peng);  Jiang DS (Jiang De-Sheng);  Zhu JJ (Zhu Jian-Jun);  Liu ZS (Liu Zong-Shun);  Wang H (Wang Hui);  Zhang SM (Zhang Shu-Ming);  Yang H (Yang Hui);  Wei L (Wei Long);  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: dgzhao@red.semi.ac.cn
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Ga Vacancies  Mocvd  Gan  Schottky Barrier Photodetector  Reverse-bias Leakage  Molecular-beam Epitaxy  P-n-junctions  Positron-annihilation  Diodes  Films  
非掺半绝缘InP材料的电子辐照缺陷研究 期刊论文
四川大学学报. 自然科学版, 2010, 卷号: 47, 期号: 5, 页码: 1069-1072
Authors:  陈燕;  邓爱红;  赵有文;  张英杰;  余鑫祥;  喻菁;  龙娟娟;  周宇璐;  张丽然
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Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector 期刊论文
ACTA PHYSICA SINICA, 2009, 卷号: 58, 期号: 11, 页码: 7952-7957
Authors:  Zhang S (Zhang Shuang);  Zhao DG (Zhao De-Gang);  Liu ZS (Liu Zong-Shun);  Zhu JJ (Zhu Jian-Jun);  Zhang SM (Zhang Shu-Ming);  Wang YT (Wang Yu-Tian);  Duan LH (Duan Li-Hong);  Liu WB (Liu Wen-Bao);  Jiang DS (Jiang De-Sheng);  Yang H (Yang Hui);  Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: dgzhao@red.semi.ac.cn
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Gan  
Anomalous Pressure Behavior of N-Cluster Emissions in GaAs0.973Sb0.022N0.005 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 12, 页码: Art.No.127101
Authors:  Wang, WJ (Wang Wen-Jie);  Deng, JJ (Deng Jia-Jun);  Fu, XQ (Fu Xing-Qiu);  Hu, B (Hu Bing);  Ding, K (Ding Kun);  Wang, WJ, N China Elect Power Univ, Dept Math & Phys, Beijing 102206, Peoples R China. 电子邮箱地址: wwj2008@ncepu.edu.cn
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Temperature-dependence