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Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO 期刊论文
Chinese Physics B, 2017, 卷号: 26, 期号: 10, 页码: 107101
Authors:  Zhan-Wei Shen;  Feng Zhang;  Sima Dimitrijev;  Ji-Sheng Han;  Guo-Guo Yan;  Zheng-Xin Wen;  Wan-Shun Zhao;  Lei Wang;  Xing-Fang Liu;  Guo-Sheng Sun;  Yi-Ping Zeng
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