SEMI OpenIR

Browse/Search Results:  1-10 of 69 Help

Selected(0)Clear Items/Page:    Sort:
Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 314, 期号: 1, 页码: 141-145
Authors:  Wei TB;  Yang JK;  Hu Q;  Duan RF;  Huo ZQ;  Wang JX;  Zeng YP;  Wang GH;  Li JM;  Wei, TB, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China. tbwei@semi.ac.cn
Adobe PDF(1157Kb)  |  Favorite  |  View/Download:1604/473  |  Submit date:2011/07/05
Cl  Pl  Stacking Fault  Hvpe  Gan  Nonpolar  Chemical-vapor-deposition  Acceptor Pair Emission  Phase Epitaxy  Grown Gan  Semiconductors  Sapphire  Films  Nitride  
Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method 期刊论文
NANOSCALE RESEARCH LETTERS, 2011, 卷号: 6, 页码: Article no.69
Authors:  Liu JM;  Liu XL;  Li CM;  Wei HY;  Guo Y;  Jiao CM;  Li ZW;  Xu XQ;  Song HP;  Yang SY;  Zhu QS;  Wang ZG;  Yang AL;  Yang TY;  Wang HH;  Liu, JM, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. liujianming@semi.ac.cn;  xlliu@semi.ac.cn
Adobe PDF(4152Kb)  |  Favorite  |  View/Download:1246/335  |  Submit date:2011/07/05
Cathodoluminescence Characterization  Gallium Nitride  Stresses  Layers  Heterostructure  Deposition  Constants  Mechanism  Sapphire  Strain  
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO(2)(100) by metal organic chemical vapour deposition 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 24, 页码: 245402
Authors:  Fu D;  Zhang R;  Liu B;  Xie ZL;  Xiu XQ;  Gu SL;  Lu H;  Zheng YD;  Chen YH;  Wang ZG;  Fu, D (reprint author), Nanjing Univ, Sch Elect Sci & Engn, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China, rzhang@nju.edu.cn
Adobe PDF(638Kb)  |  Favorite  |  View/Download:1135/233  |  Submit date:2012/02/06
Fundamental-band Gap  Indium Nitride  Buffer Layer  Dependence  Sapphire  Mocvd  
MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 319, 期号: 1, 页码: 114-117
Authors:  Zhang BA;  Song HP;  Wang J;  Jia CH;  Liu JM;  Xu XQ;  Liu XL;  Yang SY;  Zhu QS;  Wang ZG;  Zhang, BA, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. zhangbiao@semi.ac.cn
Adobe PDF(611Kb)  |  Favorite  |  View/Download:1308/389  |  Submit date:2011/07/05
Anisotropy  Crystal Morphology  Metalorganic Chemical Vapor Deposition  A-plane Inn  Indium Nitride  Movpe Growth  Cubic Inn  Sapphire  Gan  Mbe  
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO2(100) by metal organic chemical vapour deposition 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 24, 页码: Article no.245402
Authors:  Fu D;  Zhang R;  Liu B;  Xie ZL;  Xiu XQ;  Gu SL;  Lu H;  Zheng YD;  Chen YH;  Wang ZG;  Fu, D, Nanjing Univ, Sch Elect Sci & Engn, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China. rzhang@nju.edu.cn
Adobe PDF(638Kb)  |  Favorite  |  View/Download:1767/425  |  Submit date:2011/07/05
Fundamental-band Gap  Indium Nitride  Buffer Layer  Dependence  Sapphire  Mocvd  
The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 314, 期号: 1, 页码: 39-42
Authors:  Shi K;  Yang AL;  Wang J;  Song HP;  Xu XQ;  Sang L;  Wei HY;  Yang SY;  Liu XL;  Zhu QS;  Wang ZG;  Shi, K, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. shikai@semi.ac.cn;  xlliu@semi.ac.cn
Adobe PDF(602Kb)  |  Favorite  |  View/Download:1443/487  |  Submit date:2011/07/05
Metal Organic Chemical Vapor Deposition  Sapphire  Zinc Compounds  Semiconducting Ii-vi Materials  Vapor-phase Epitaxy  Optical-properties  Zno Nanorods  Raman-scattering  M-plane  Films  Photoluminescence  Deposition  Nanowires  Fields  
Structures and optical characteristics of InGaN quantum dots grown by MBE 期刊论文
Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering, 2011, 卷号: 40, 期号: 11, 页码: 2030-2032
Authors:  Wang, Baozhu;  Yan, Cuiying;  Wang, Xiaoliang;  Wang, B.(wangbz@semi.ac.cn)
Adobe PDF(952Kb)  |  Favorite  |  View/Download:930/318  |  Submit date:2012/06/14
Atomic Force Microscopy  Gallium Nitride  Molecular Beam Epitaxy  Optical Materials  Optical Properties  Reflection High Energy Electron Diffraction  Sapphire  
Surface characterization of AlGaN grown on Si (111) substrates 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 331, 期号: 1, 页码: 29-32
Authors:  Pan X;  Wang XL;  Xiao HL;  Wang CM;  Feng C;  Jiang LJ;  Yin HB;  Chen H;  Pan, X (reprint author), Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China, xpan@semi.ac.cn
Adobe PDF(596Kb)  |  Favorite  |  View/Download:925/157  |  Submit date:2012/01/06
Molecular-beam Epitaxy  Field-effect Transistors  Vapor-phase Epitaxy  Group-iii Nitrides  Inversion Domains  High-temperature  Gan  Si(111)  Aln  Sapphire  
Strain effects on optical polarisation properties in (11(2)over-bar2) plane GaN films 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 11, 页码: Art. No. 117104
Authors:  Hao GD (Hao Guo-Dong);  Chen YH (Chen Yong-Hai);  Fan YM (Fan Ya-Ming);  Huang XH (Huang Xiao-Hui);  Wang HB (Wang Huai-Bing);  Hao, GD, Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Nanodevices & Mat Div, Suzhou 215125, Peoples R China.
Adobe PDF(1060Kb)  |  Favorite  |  View/Download:1148/325  |  Submit date:2010/12/28
Light-emitting-diodes  Wurtzite Semiconductors  Quantum-wells  Matrix-elements  Semipolar  Sapphire  
Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 1, 页码: Art. No. 017301
Authors:  Guo LC;  Wang XL;  Xiao HL;  Ran JX;  Wang CM;  Ma ZY;  Luo WJ;  Wang ZG;  Guo LC Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China. E-mail Address: lcguo@semi.ac.cn
Adobe PDF(437Kb)  |  Favorite  |  View/Download:1956/748  |  Submit date:2010/03/08
Content Algan/gan Heterostructures  Chemical-vapor-deposition  Field-effect Transistors  Al-content  Algan/aln/gan Heterostructures  Hemt Structures  Phase Epitaxy  Sapphire  Gas  Densities