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Unraveling the Defect Emission and Exciton−Lattice Interaction in Bilayer WS 2 期刊论文
The Journal of Physical Chemistry C, 2019, 卷号: 123, 期号: 7, 页码: 4433-4440
Authors:  Qing-Hai Tan;  Shu-Liang Ren;  Tao Shen;  Xue-Lu Liu;  Wei Shi;  Yu-Jia Sun;  Hui-Xiong Deng;  Ping-Heng Tan;  Jun Zhang
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Suppression of optical field leakage in GaN-based green laser diode using graded-indium n-In x Ga 1-x N lower waveguide 期刊论文
Superlattices and Microstructures, 2019, 卷号: 132, 页码: 106153
Authors:  Feng Liang ;   Degang Zhao ;   Desheng Jiang ;   Zongshun Liu ;   Jianjun Zhu ;   Ping Chen ;   Jing Yang ;   Shuangtao Liu ;   Yao Xing ;   Liqun Zhang
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Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process 期刊论文
Nanoscale Research Letters, 2019, 卷号: 14, 页码: 280
Authors:  Shuangtao Liu;  Jing Yang;  Degang Zhao;  Desheng Jiang;  Jianjun Zhu;  Feng Liang;  Ping Chen;  Zongshun Liu;  Yao Xing;  Liyuan Peng
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Influence of small indium content in quantum barriers on the luminescence properties of InGaN/InGaN double-quantum wells 期刊论文
Optical Materials Express, 2019, 卷号: 9, 期号: 10, 页码: 3941-3951
Authors:  FENG LIANG ;   DEGANG ZHAO ;   DESHENG JIANG ;   ZONGSHUN LIU ;   JIANJUN ZHU ;   PING CHEN ;   JING YANG ;   LIQUN ZHANG
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Scanning Near-Field Fluorescence Microscopy Applied to ESEM 期刊论文
IEEE PHOTONICS TECHNOLOGY LETTERS, 2019, 卷号: 31, 期号: 8, 页码: 615-618
Authors:  Ping Gong ;   Huixia Yang;   Hui Gao;   Banghong Zhang;   Liang Xie
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Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence 期刊论文
NANOSCALE RESEARCH LETTERS, 2019, 卷号: 14, 页码: 88
Authors:  Yao Xing ;   Degang Zhao ;   Desheng Jiang ;   Zongshun Liu ;   Jianjun Zhu ;   Ping Chen ;   Jing Yang ;   Feng Liang ;   Shuangtao Liu ;   Liqun Zhang
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The role of temperature ramp-up time before barrier layer growth in optical and structural properties of InGaN/GaN multi-quantum wells 期刊论文
Superlattices and Microstructures, 2018, 卷号: 117, 页码: 228-234
Authors:  Yao Xing ;   Degang Zhao ;   Desheng Jiang ;   Zongshun Liu ;   Jianjun Zhu ;   Ping Chen ;   Jing Yang ;   Wei Liu ;   Feng Liang ;   Shuangtao Liu ;   Liqun Zhang ;   Wenjie Wang ;   Mo Li ;   Yuantao Zhang ;   Guotong Du
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Suppression the Leakage of Optical Field and Carriers in GaN-Based Laser Diodes by Using InGaN Barrier Layers 期刊论文
IEEE Photonics Journal, 2018, 卷号: 10, 期号: 4, 页码: 1503107
Authors:  Jing Yang;  Degang Zhao;  Zongshum Liu;  De-Sheng Jiang;  Jianjun Zhu;  Ping Chen;  Feng Liang;  S. T. Liu;  Wei Liu;  Yao Xing;  Mo Li
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Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN 期刊论文
Nanomaterials (Basel, Switzerland), 2018, 卷号: 8, 期号: 12, 页码: 1026
Authors:  Feng Liang;  Degang Zhao;  Desheng Jiang;  Zongshun Liu;  Jianjun Zhu;  Ping Chen;  Jing Yang;  Shuangtao Liu;  Yao Xing;  Liqun Zhang
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Anomalous electroluminescent blue-shift behavior induced by well widths variance and localization effect in InGaN/GaN multi-quantum wells 期刊论文
OPTICS EXPRESS, 2018, 卷号: 26, 期号: 17, 页码: 21736-21744
Authors:  LIYUAN PENG ;   DEGANG ZHAO ;   DESHENG JIANG ;   JIANJUN ZHU ;   ZONGSHUN LIU ;   PING CHEN ;   JING YANG ;   WEI LIU ;   FENG LIANG ;   YAO XING ;   SHUANGTAO LIU ;   LIQUN ZHANG ;   WENJIE WANG ;   MO LI ;   YUANTAO ZHANG ;   GUOTONG DU
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